09JUL2008 Search Results

Contextual Info: L6390 High-voltage high/low-side driver Datasheet − production data Features • High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with 1 nF

Contextual Info: VN808CM-E Octal channel high-side driver Datasheet - production data • Protection against loss of ground • Very low standby current • Compliance to 61000-4-4 IEC test up to 4 kV Description PowerSO-36 Features Type RDS on IOUT VCC VN808CM-E 160 mΩ

transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w 13003 TRANSISTOR st 13003 TRANSISTOR npn 13003 Transistor NPN Power TO 126 13003 charger E 13003 b TRANSISTOR 78/13003 transistor smps circuit
Contextual Info: ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications 1 2 3 • Electronic ballast for fluorescent lighting CFL

Contextual Info: STGW40NC60W 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ High frequency operation Applications ) s ( ct u d o 2 1 ■ High frequency inverters, UPS ■ Motor drivers ■ HF, SMPS and PFC in both hard switch and

Contextual Info: STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ IGBT co-packaged with ultra fast free-wheeling diode ■ High frequency operation ) s ( ct u d o 2 1 Applications 3 TO-247 ■ High frequency inverters, UPS

Contextual Info: L6390 High-voltage high/low-side driver Datasheet − production data Features • High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with 1 nF

Contextual Info: STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ IGBT co-packaged with ultra fast free-wheeling diode ■ High frequency operation 1 Applications 2 3 TO-247 ■ High frequency inverters, UPS

JESD97

Abstract: ST3243E ST3243EB ST3243EC TSSOP28
Contextual Info: ST3243EB ST3243EC ± 15 kV ESD protected 3 to 5.5 V, 400 Kbps, RS-232 transceiver with auto power-down Features • ESD protection for RS-232 I/O pins: – ±8 kV IEC 1000-4-2 contact discharge – ±15 kV human body model ■ 1 µA supply current achieved when in auto

STGW40NC60WD

Abstract: GW40NC60WD schematic diagram "induction heating" JESD97
Contextual Info: STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ IGBT co-packaged with ultra fast free-wheeling diode ■ High frequency operation 2 3 1 Applications TO-247 ■ High frequency inverters, UPS

Contextual Info: VN808CM-E Octal channel high-side driver Datasheet - production data • Protection against loss of ground • Very low standby current • Compliance to 61000-4-4 IEC test up to 4 kV Description PowerSO-36 Features Type RDS on IOUT VCC VN808CM-E 160 mΩ

NAND16GW3D2A

Abstract: C5761 2112B
Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage

transistor ST 13003 w, TO-126

Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 st 13003 TRANSISTOR npn transistor ST 13003 w TR 13003 transistor st 13003 w transistor switch 13003 13003 SMPS 13003 NPN Transistor features
Contextual Info: ST13003-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting CFL ■ SMPS for battery charger

TAB 429 H

Abstract: VN808CM-E
Contextual Info: VN808CM-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-E 160 mΩ 0.7 A 45 V • CMOS compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation

Contextual Info: THIS £ L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC RESERVED. AA DIST R E V I S I O N S 22 LTR DESCRIPTION DATE DWN APVD E COS I 1- 0 0 2 5 - 0 4 26SEP2004 LAM 0K ECO- 0 6 - 0 2 6 6 4 4

16G nand

Contextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage

L6390DTR

Abstract: 14493 AN2738 L6390 L6390D L6390N
Contextual Info: L6390 High-voltage high and low side driver Features • High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with

123-009

Abstract: 12-23C
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Full Color Chip LED Chip LED with Right Angle Lens 12-23C/R6GHBHC-A01/2C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow

st 13003 TRANSISTOR npn

Abstract: 13003 transistor smps circuit TR 13003 transistor transistor ST 13003 w, TO-126 electronic ballast for fluorescent lighting 13003 electronic ballast by transistor 13003 electronic ballast 13003 13003 transistor 13003 NPN Transistor features 13003 SMPS
Contextual Info: ST13003-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic ballast for fluorescent lighting CFL

NAND16GW3D2A

Abstract: NAND32GW3D4A
Contextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage

NAND32G

Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
Contextual Info: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area

NAND16GW3D2A

Abstract: NAND32GW3D4A NAND08GW3D2A
Contextual Info: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area

bad block management in mlc nand

Contextual Info: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Full Color Chip LED Chip LED with Right Angle Lens 12-23C/R6GHBHC-A01/2C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow

Contextual Info: VN808CM-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-E 150 mΩ 1A 45 V • VCC/2 compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation