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    09E00 Search Results

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    09E00 Price and Stock

    Aihua Technology Group Co Ltd SVZ1CM181E09E00RERF4

    CAP ALUM POLY 180UF 20% 16V SMD
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    DigiKey SVZ1CM181E09E00RERF4 Cut Tape 9,995 1
    • 1 $1.18
    • 10 $0.734
    • 100 $0.4994
    • 1000 $0.4994
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    SVZ1CM181E09E00RERF4 Digi-Reel 9,995 1
    • 1 $1.18
    • 10 $0.734
    • 100 $0.4994
    • 1000 $0.4994
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    SVZ1CM181E09E00RERF4 Reel 8,800 800
    • 1 -
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    3M Interconnect 8P09-E001

    CONN D-SUB PLUG 9POS PNL MNT
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    DigiKey 8P09-E001 Tray 5,000
    • 1 -
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    • 10000 $1.875
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    3M Interconnect 8R09-E001

    CONN D-SUB RCPT 9POS PNL MNT
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    DigiKey 8R09-E001 Tray 5,000
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    Aihua Technology Group Co Ltd SVF1EM101E09E00REX24

    CAP ALUM POLY 100UF 20% 25V SMD
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    DigiKey SVF1EM101E09E00REX24 Reel 400
    • 1 -
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    • 10000 $0.05108
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    SVF1EM101E09E00REX24 Cut Tape 1
    • 1 $0.27
    • 10 $0.158
    • 100 $0.0986
    • 1000 $0.0986
    • 10000 $0.0986
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    SVF1EM101E09E00REX24 Digi-Reel 1
    • 1 $0.27
    • 10 $0.158
    • 100 $0.0986
    • 1000 $0.0986
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    KEMET Corporation T528Z477M2R5ATE009E008

    470.UF 2.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey T528Z477M2R5ATE009E008 Reel 1,000
    • 1 -
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    • 1000 $2.10343
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    Find more 09E00 price and stock on Findchips.com

    09E00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0802A

    Abstract: 0802A LCD Y208 0002C y204 y205 1ff18 0FF58 Diode Mark ON A16
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16664 144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM DESCRIPTION The µ PD16664 is a column (segment) driver with internal RAM and can drive a full-dot LCD. Equipped with 144/160/184/208-output pins and a display RAM of 208 x 160 x 2 bits, this driver can display any of four gray levels


    Original     		PDF PD16664 144/160/184/208-OUTPUT PD16664 25-level PD16667, 0802A 0802A LCD Y208 0002C y204 y205 1ff18 0FF58 Diode Mark ON A16

    bt21605

    Abstract: Sw 2604 rs232 protocols MSP43063 7812 BT21605 schematics MSP430 MSP430F1121 MSP430P112 TRF6900
    Text: Application Report SLAA121 – March 2001 Implementing a Bidirectional, Half-Duplex FSK RF Link With TRF6900 and MSP430 Peter Spevak MSLP – MSP430 ABSTRACT The advantage of radio frequency RF over infrared (IR) links for communication and data transfer is that with RF a successful communication can be set up even when the participants


    Original     		PDF SLAA121 TRF6900 MSP430 MSP-EVKTRF6900 MSP430 bt21605 Sw 2604 rs232 protocols MSP43063 7812 BT21605 schematics MSP430F1121 MSP430P112

    446H

    Abstract: IR 1836 3v 30E2H 18AF 3310h 3310H transistor 3A0F bridge marking Z6 SDH 209 PM5363
    Text: PM5363 TUPP+622 TUPP+622 DATASHEET PMC-1981421 ISSUE 4 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES PM5363 TUPP+622 SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FOR 622 MBIT/S INTERFACES DATASHEET RELEASED ISSUE 4: JULY 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE


    Original     		PDF PM5363 PMC-1981421 PM5363 PMC-1981103 446H IR 1836 3v 30E2H 18AF 3310h 3310H transistor 3A0F bridge marking Z6 SDH 209

    PC28F00AG18

    Abstract: PC28F512 PC28F256G18F PC28F00AG PC28F00AG18FE PC28F256G18FE pc28f00 2N 8904 PC28F512G18FE PC28F00AG18FF
    Text: 128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory P/N P/N P/N P/N – – – – PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx Features • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V


    Original     		PDF 128Mb, 256Mb, 512Mb, PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx 512-Mbit, 16-word 09005aef8448483a PC28F00AG18 PC28F512 PC28F256G18F PC28F00AG PC28F00AG18FE PC28F256G18FE pc28f00 2N 8904 PC28F512G18FE PC28F00AG18FF

    00005H

    Abstract: Y240 09fe
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD16663 PD16667 PD16663N-XXX PD16663N-051 S13392JJ1V0DS00 00005H Y240 09fe

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    M29W128GL

    Abstract: M29W128GH70 M29W128G M29W128GL7
    Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


    Original     		PDF M29W128GH M29W128GL 128-Mbit 64-byte M29128GH/L: Kbytes/64 M29W128GL M29W128GH70 M29W128G M29W128GL7

    PCM TMS320C5510

    Abstract: ap3114 69 lvb SPRU769 BUT31 1D400 Datasheet of IC 7400 ARM926EJS OMAP5910 OMAP5912
    Text: OMAP5912 Multimedia Processor DSP Subsystem Reference Guide Literature Number: SPRU750A March 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any


    Original     		PDF OMAP5912 SPRU750A OMAP5912 PCM TMS320C5510 ap3114 69 lvb SPRU769 BUT31 1D400 Datasheet of IC 7400 ARM926EJS OMAP5910

    palce16v8 programming algorithm

    Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
    Text: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.


    Original     		PDF PALCE29M16H-XX PALCE29MA16H-XX PALLV22V10/Z PALCE16V8H/Q/Z-XX PALLV16V8/Z-XX PALLV16V8Z-XX PALCE16V8HD-XX PALCE16V8 palce16v8 programming algorithm PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV2562M 120R C8800

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV256M l256mh113 L256ML123R

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


    Original     		PDF S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N,

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29LV256M L256MH113R L256ML113R

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300

    M29DW127G

    Abstract: No abstract text available
    Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


    Original     		PDF M29W128GH M29W128GL 128-Mbit 64-byte M29128GH/L: Kbytes/64 M29DW127G

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


    Original     		PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair

    Untitled

    Abstract: No abstract text available
    Text: D A T A S H EE T NEC MOS INTEGRATED CIRCUIT ¿¿PD16662 240 OUTPUT LCD COLUMN SEGMENT DRIVER WITH BUILT-IN RAM The ,uPD16662 is a column (segment) driver which contains a RAM capable of full dot LCD drive. With 240 outputs, this driver has a display RAM of 240 x 160 x 2 bits built in, and 4 gray scales of display are


    OCR Scan     		PDF uPD16662 uPD16667