Untitled
Abstract: No abstract text available
Text: L4925 Very low drop voltage regulator Features • Operating DC supply voltage range 6 V to 28 V ■ Transient supply voltage up to 40 V ■ Extremely low quiescent current ■ High precision output voltage ■ Output current capability up to 500 mA ■ Very low dropout voltage less than 0.6 V
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L4925
PowerSO-20
L4925
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Untitled
Abstract: No abstract text available
Text: STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 N-channel 550 V, 0.150 Ω typ., 16 A, MDmesh V Power MOSFETs in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS on max ID 600 V 0.192 Ω
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STB18N55M5,
STD18N55M5,
STF18N55M5,
STP18N55M5
O-220FP
O-220
STB18N55M5
STD18N55M5
STF18N55M5
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ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
ULGA52
NAND08GW3B2C
ONFI nand flash
NAND04GW3B2DN6
NAND08G-B2C
NAND08GR3B4C
NAND08GW3B4C
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19NM50N
Abstract: STP19nm50n STW19NM50N STF19NM50N stf19nm50 17079 stp19nm50 19nm50
Text: STF19NM50N STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 Features Type STF19NM50N STP19NM50N STW19NM50N VDSS @ TJmax RDS on max 550 V < 0.25 Ω ID 2 14 A • 100% avalanche tested ■ Low input capacitances and gate charge
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STF19NM50N
STP19NM50N,
STW19NM50N
O-220FP,
O-220
O-247
STP19NM50N
19NM50N
STP19nm50n
STW19NM50N
STF19NM50N
stf19nm50
17079
stp19nm50
19nm50
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10-DOF
Abstract: LSM303DLH STEVAL-mki062v2 LSM303 2 axis Accelerometer STM32F103RE LPS001DL LPS001DL pressure sensor inemo accelerometer magnetometer
Text: STEVAL-MKI062V2 iNEMO: iNErtial MOdule V2 demonstration board based on MEMS sensors and the STM32F103RE Data brief Features • Two power supply options: power connector, USB connector ■ STM32F103RE: high-density performance line ARM-based 32-bit MCU with 256 to 512 kB
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STEVAL-MKI062V2
STM32F103RE
STM32F103RE:
32-bit
LPR430AL:
LY330ALH:
LSM303DLH:
10-DOF
LSM303DLH
STEVAL-mki062v2
LSM303
2 axis Accelerometer
STM32F103RE
LPS001DL
LPS001DL pressure sensor
inemo
accelerometer magnetometer
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800w power supply unit
Abstract: triac with snubber T620-800W T620W
Text: T620W 6 A Snubberless Triac Features A2 • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T620W is especially suited for high inductance loads. This device complies with UL standards
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T620W
T620W
E81734)
ISOWATT220AB
800w power supply unit
triac with snubber
T620-800W
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION - 6 5 4 3 2 20 LOC GP ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR E DESCRIPTION DATE REVISED PER ECR-13-010469 DWN APVD JR 25JUN13 TM D D 5.76 1.5 ISOMETRIC VIEW 47.27 3.96 C TYP C
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ECR-13-010469
25JUN13
UL94V-0
09FEB2010
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STD120N4F6
Abstract: 17042 120N4F6 STB120N4F6 STP120N4F6
Text: STB120N4F6 STD120N4F6, STP120N4F6 N-channel 40 V, 4 mΩ , 80 A, DPAK, D²PAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max. ID STB120N4F6 40 V 4 mΩ 80 A STD120N4F6 40 V 4 mΩ 80 A STP120N4F6 40 V 4.3 mΩ 80 A • Standard threshold drive
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STB120N4F6
STD120N4F6,
STP120N4F6
O-220
STD120N4F6
STD120N4F6
17042
120N4F6
STB120N4F6
STP120N4F6
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Untitled
Abstract: No abstract text available
Text: T620W 6 A Snubberless Triac Features • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V A2 G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T620W is especially suited for high inductance loads. This device complies with UL standards
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T620W
T620W
E81734)
ISOWATT220AB
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Untitled
Abstract: No abstract text available
Text: STB120N4F6 STD120N4F6, STP120N4F6 N-channel 40 V, 4 mΩ , 80 A, DPAK, D²PAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max. ID STB120N4F6 40 V 4 mΩ 80 A (1) STD120N4F6 40 V 4 mΩ (1) STP120N4F6 40 V 4.3 mΩ 80 A 3 3 1 80 A (1)
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STB120N4F6
STD120N4F6,
STP120N4F6
O-220
STD120N4F6
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STW19NM50N
Abstract: No abstract text available
Text: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1
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STF19NM50N,
STP19NM50N,
STW19NM50N
O-220FP,
O-220
O-247
STF19NM50N
O-220FP
O-220
STP19NM50N
STW19NM50N
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MO-166
Abstract: L4925 L4925PD L4925PD013TR ST L4925
Text: L4925 Very low drop voltage regulator Features • Operating DC supply voltage range 6 V to 28 V ■ Transient supply voltage up to 40 V ■ Extremely low quiescent current ■ High precision output voltage ■ Output current capability up to 500 mA ■ Very low dropout voltage less than 0.6 V
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L4925
PowerSO-20
L4925
MO-166
L4925PD
L4925PD013TR
ST L4925
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T630-800W
Abstract: T630-600W T630W triac 600W
Text: T630W 6 A Snubberless Triac Features • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V A2 G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T630W is especially suited for high inductance loads. This device complies with UL standards
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T630W
T630W
E81734)
ISOWATT220AB
T630-800W
T630-600W
triac 600W
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ST 17078
Abstract: STD18N55 c5690 STD18N55M5 18N55M5 17078 STP18N55 STF18 STP18N55M5 STF18N55M5
Text: STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 14 A, MDmesh V Power MOSFET in DPAK, TO-220FP and TO-220 Preliminary data Features Type VDSS @TJmax RDS on max ID 600 V < 0.21 Ω 14 A STD18N55M5 STF18N55M5 STP18N55M5 3 1 DPAK 3 1 • DPAK worldwide best RDS(on)
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STD18N55M5
STF18N55M5,
STP18N55M5
O-220FP
O-220
STF18N55M5
O-220FP
ST 17078
STD18N55
c5690
STD18N55M5
18N55M5
17078
STP18N55
STF18
STP18N55M5
STF18N55M5
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EMIF03-SIM02F3
Abstract: AN1751 AN2348
Text: EMIF03-SIM02F3 3-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space consuming: 1.2 mm2 ■ Very thin package: 0.60 mm ■ High efficiency in ESD suppression
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EMIF03-SIM02F3
EMIF03-SIM02F3
AN1751
AN2348
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120N4F6
Abstract: stp120n4f6 STD120N4F6 624 Marking Code STB120N4F6 17042
Text: STB120N4F6 STD120N4F6, STP120N4F6 N-channel 40 V, 4 mΩ , 80 A, DPAK, D²PAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STB120N4F6 40 V 4 mΩ 80 A STD120N4F6 40 V 4 mΩ 80 A STP120N4F6 40 V 4 mΩ 3 3 1 80 A 1 DPAK
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STB120N4F6
STD120N4F6,
STP120N4F6
O-220
STD120N4F6
120N4F6
stp120n4f6
STD120N4F6
624 Marking Code
STB120N4F6
17042
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Untitled
Abstract: No abstract text available
Text: L4925 Very low drop voltage regulator Features • Operating DC supply voltage range 6 V to 28 V ■ Transient supply voltage up to 40 V ■ Extremely low quiescent current ■ High precision output voltage ■ Output current capability up to 500 mA ■ Very low dropout voltage less than 0.6 V
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L4925
PowerSO-20
L4925
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marking gk
Abstract: AN1751 AN2348 EMIF04-EAR01F2
Text: EMIF04-EAR01F2 4-line IPAD , EMI filter and ESD protection Features • EMI I/O low-pass filter ■ High efficiency in EMI filtering ■ High density capacitor ■ Very low PCB space occupation: 1.92 x 1.42 mm ■ Very thin package: 0.65 mm ■ High efficiency in ESD suppression on external
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EMIF04-EAR01F2
marking gk
AN1751
AN2348
EMIF04-EAR01F2
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION Tyco Electronics AMP GmbH 6 5 4 3 2 20 LOC GP ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE REVISED PER ECR-14-003027 C DWN APVD NK 08MAR2014 TM D D ISOMETRIC REAR VIEW
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ECR-14-003027
08MAR2014
UL94V-0
X-1744544-X
09FEB2010
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SCHNEIDER PLC
Abstract: No abstract text available
Text: THIS DRAWING IS C O P Y R I G H T 2 006 UNPUBLISHED. RELEASED ALL FOR PUBLICATION RIGHTS REVISIONS RESERVED. LTR DATE EC R - 0 9 - 0 2 6 7 5 6 B1 PANEL CUT-OUT W H E N OSEO DESCRIPTION DWN 09FEB2010 APVD ME F O R 0 O N T AO T I N S E R T W ITHOOT HOOSING
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09FEB2010
09FEB2010
SCHNEIDER PLC
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Untitled
Abstract: No abstract text available
Text: T H I S DRAWING IS UNPUBLI SHED. COPYR IGHT 2006 RELEASED FOR P UB LI CA TI ON REVISIONS ALL RIGHTS RESERVED. LTR B1 DE S CR I PTI ON DATE EC R - 0 9 - 0 2 6 7 5 6 DWN APVD ME 09FEB2010 PANEL E U T - O U T FOR E O N T A O T I N S E R T W H E N USED W I T H O O T HOUS I NO
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09FEB2010
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pc-gf20
Abstract: ON5264 pc-gf-20
Text: TH I S CO PN DRAWING IS UNPUBLISHED. C O P Y R I G H T 2000 0-1 As RELEASED TYCO BY ELECTRONICS FOR COR POR AT I O N . A L L P U B L I C A T I ON R IGHTS 2 000 LOC D IST REV IS IONS RESERVED. DESCRIPTION Shown Contact arrangement vi ew from connecting side
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09FEB2010
21SEP2010
61984-GF20
PC-GF20
MAR2000
ON5264
pc-gf-20
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Untitled
Abstract: No abstract text available
Text: TH I S D R A W I NG IS UNPUBL ISH E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION, FOR ALL PUBLICATION RIGHTS LOC REV I S IONS D I ST RESERVED. D E S C R I P T I ON FOR AS 2 SHOWN ARE . 3 . ON PAGE 2 DATE ECR-0 7 -0 0 I 864 06MAR07 KG ECR-07-025776
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02SEP2009
09FEB2010
ECR-07-025776
3APR2004
06MAY2004
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Untitled
Abstract: No abstract text available
Text: TH I S D R A W I NG IS UNPUBL ISH E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION, FOR ALL PUBLICATION RIGHTS LOC REV I S IONS D I ST RESERVED. D E S C R I P T I ON F OR SHIPPED 2 . 3 . PAGE ARE S DATE ECR-0 7 -0 0 I 864 06MAR07 KG ECR-07-025776
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06MAR07
6NOV07
ISEP2009
09FEB2010
ECR-07-025776
3APR2004
06MAY2004
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