Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C 2 3 RELEASED FOR PUBLICATION LOC DY ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 1 REVISIONS DIST - P DESCRIPTION LTR F2 1.5 REF DATE REVISED PER ECR-13-019056 DWN W.K. S.C. 09DEC13 APVD D D DETAIL M 0.70
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ECR-13-019056
09DEC13
31MAR2000
01JUNE2007
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Untitled
Abstract: No abstract text available
Text: V10D100C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V10D100C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2318AES
AEC-Q101
OT-23
O-236)
SQ2318AES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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V8PM12-M3,
V8PM12HM3
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SS3H9-M3, SS3H10-M3 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection
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SS3H10-M3
J-STD-020,
DO-214AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V10D120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V10D120C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VSSA210-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package TMBS • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop
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VSSA210-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V10D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES ® TMBS eSMP Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V10D60C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: V30D60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V30D60C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: DG406, DG407 www.vishay.com Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406 is a 16 channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407
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DG406,
DG407
16-Ch/Dual
DG406
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: B120-M3, B130-M3, B140-M3, B150-M3, B160-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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B120-M3,
B130-M3,
B140-M3,
B150-M3,
B160-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
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V10L45
Abstract: No abstract text available
Text: V10PL45-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
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V10PL45-M3
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V10L45
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Untitled
Abstract: No abstract text available
Text: V30D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V30D45C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BYS11-90-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses
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BYS11-90-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: B350A-M3, B360A-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability
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B350A-M3,
B360A-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VSSAF3L45-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm TMBS SlimSMATM • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency
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VSSAF3L45-M3
J-STD-020,
DO-221AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V10PM12-M3, V10PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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V10PM12-M3,
V10PM12HM3
AEC-Q101
O-277A
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SS22S-M3, SS23S-M3, SS24S-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability
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SS22S-M3,
SS23S-M3,
SS24S-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VSSA310S-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency
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VSSA310S-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V30DM120C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V30DM120C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SL12-M3, SL13-M3 www.vishay.com Vishay General Semiconductor Low VF Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop
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SL12-M3,
SL13-M3
J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: V10D45C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V10D45C
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: V30D60CL www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A FEATURES TMBS eSMP® Series • Trench MOS Schottky technology TO-263AC SMPD • Very low profile - typical height of 1.7 mm
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V30D60CL
O-263AC
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: DG406B, DG407B www.vishay.com Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406B is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address.
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DG406B,
DG407B
16-Ch/Dual
DG406B
16-channel
DG407B
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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