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    0985 R Search Results

    0985 R Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS610985DSET Texas Instruments 3V output voltage, ultra-low quiescent current synchronous boost with integrated LDO/load 6-WSON -40 to 85 Visit Texas Instruments Buy
    TPS610985DSER Texas Instruments 3V output voltage, ultra-low quiescent current synchronous boost with integrated LDO/load 6-WSON -40 to 85 Visit Texas Instruments Buy
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    0985 R Price and Stock

    Samtec Inc IDMD-13-T-09.85-R

    Cable Assembly Flat Ribbon 0.25m 28AWG 26 POS IDC Connector to 26 POS IDC Connector PL-SKT IDT-IDT Bulk - Bulk (Alt: IDMD-13-T-09.85-R)
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    Avnet Americas IDMD-13-T-09.85-R Bulk 1
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    Master Electronics IDMD-13-T-09.85-R
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    • 100 $10.06
    • 1000 $9.07
    • 10000 $8.02
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    Sager IDMD-13-T-09.85-R
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    Samtec Inc C28S-09.85-RPS8-RPS8

    Circular RF Shielded Twisted Pair Twinax Cabl - Bulk (Alt: C28S-09.85-RPS8-RPS8)
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    VPG Transducers Y00985R00000Q9L

    Ultra-High Precision Resistor Metal Foil 5Ohm 0.02% Bulk - Bulk (Alt: Y00985R00000Q9L)
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    Avnet Americas Y00985R00000Q9L Bulk 1
    • 1 $29.2824
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    • 100 $14.6558
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    TE Connectivity 770901-1

    Pin & Socket Connectors PIN 26-22 AWG REEL OF 7000
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    Mouser Electronics 770901-1 63,000
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    TE Connectivity 1-770901-0

    Pin & Socket Connectors PIN 26-22 BR/AU Reel of 7000
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    Mouser Electronics 1-770901-0 14,000
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    0985 R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BY APPD DATE DESCRIPTION 1. MATERIAL SPECIFICATIONS: ALL METAL PARTS: COPPER ALLOY INSULATOR: PTFE PER ASTM D1710 1.379 35.03 00 PRELIMINARY DWG EWR08-ER7903 XXX REV 1.858 47.19 DCam 5/13/08 NOTES: UNLESS OTHERWISE SPECIFIED 1.182 30.02 3. FINISH SPECIFICATIONS:


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    D1710 EWR08-ER7903 999B-069-00401M SD999B-069-00401M PDF

    94HB 138

    Abstract: Variable resistor 10k 360 rotation resistor 1/8 WATT Variable resistor 10K ohm pot variable resistor 25k shaftless
    Text: Series 251 Long Life 9mm Diameter Composition Element Variable Resistor Features • 1 million cycle life • Miniature 9 mm size • Multiple rotation angles available • Low rotational torque • Sturdy insert molded PC terminals • Bushing mount or shaftless available


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Instruction Sheet 408-8644 HM-Zd Receptacle Removal Tools 1583224-[ ] 1. INTRODUCTION 09 FEB 09 Rev B HM-Zd Receptacle HM–Zd Receptacle Removal Tools 1583224–[ ] are designed to be used in conjunction with HM–Zd Chicklet Removal Tools 1583248–1 or 1583249–1 to


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    58550

    Abstract: 13.5672 09861 93S360 13.575600 13.575 QUARTZ 20,25 MHZ 09864
    Text: Quartz Crystal Units 93SMX STANDARD SMD CRYSTALS 93SMX STANDARD FREQUENCIES XTAL STANDARD SPECIFICATIONS 1. Package type 2. Frequency range 3. Frequency tolerance 4. Temperature stability referred to +25˚C 5. Load capacitance (CL) 6. Shunt capacitance (Co)


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    93SMX 93SMX ma00000 58550 13.5672 09861 93S360 13.575600 13.575 QUARTZ 20,25 MHZ 09864 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRING-LOADED CONNECTORS Discrete Spring-Loaded Contacts 0958 0,48 DIA. 0,48 DIA. MAX STROKE 1,4 1,4 1,09 DIA. 6,4 0,71 0,64 4,06 11,2 0,71 1,83 DIA. 1,98 DIA. 4,72 0,64 1,65 DIA. 1,07 DIA. 0,46 DIA. 6,43 1,63 DIA. 0,94 DIA. 2,62 MAX STROKE 1,5 DIA. 0,64 0,41 DIA.


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    2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: HANDTOOL PART No. 69008-0985 DESCRIPTION Parallel action crimp handtoot with terminal locator and precision crimp profiles. FEATURES 1. Terminates Molex C-Grid IÏI Crimp Terminals 90119 22-28 AWG. 2. Designed for prototype; smalt batch and field repair applications.


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    200mm 150mmx TR/64/2 PDF

    Untitled

    Abstract: No abstract text available
    Text: n 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S , 6 4 5 3 2 19 DI ST LOC R ES ER V ED . FT REVI SI ONS DESCRIPTION D 1 /2' WILL ACCEPT 19 REVI5E MU L T I MAT E PE R ECN


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    0G3B-0B82-00 02JAN01 JAN-01 /home/ampt3172/edmmod PDF

    Corning 7052

    Abstract: Corning 7070 142-1000-001
    Text: Io Ihnson Components SMA - 50 Ohm Connectors J IN C H E S M IL L IM E T E R S C U S T O M E R D R A W IN G S AVA ILA B LE U P O N R E Q U E S T Field Replaceable Hermetic Seal Feedthrough r ( - - PART NUMBER 142-1000-001 142-1000-002 142-1000-003 142-1000-004


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    IL-STD-202, Corning 7052 Corning 7070 142-1000-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: X X —1 1— X X 1—1 X X 1—1 X X X 1_1 UJ CO Jx , X X 1_1 X —' X U 1 _s X X 1+ X 1+ X X X X X X X X X 1_1 X X . X —1 1—1 X X X 1_1 X X 1_1 " X X° xx om i+ i+ -«si • o xx Q 3 "O ro ro ^ ■ XI m x i+ x ^ 1 8. 2 6 [ . 7 1 9 ] o LQ un ii - 9 . 12 [ . 3


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    30-N0V-0 amp22095 0q3b-0073-01 PDF

    MOTOROLA DATE CODE transistor

    Abstract: MSC2295–BT1
    Text: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s


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    MSC2295-BT1/D MSC2295-BT1 MSC2295-CT1 SC-59 MOTOROLA DATE CODE transistor MSC2295–BT1 PDF

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


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    uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s PDF

    2SB624

    Abstract: 2SD596 F50450
    Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)


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    100mA) 2SB624 PWS10ms, 2SD596 F50450 PDF

    pc574j

    Abstract: sh03 5108a T108 HS 1621 UPC-574J XL08 LM 3323
    Text: NEC Aà i? T /\f7 * < • 4 — B ipolar A nalog Integ rated C irc u it M PC574J V o lt a g e II M a x im u m R a t in g s T a = 2 5 fê 5e # 10 Iz mA s fi » ÜC * Pd yB ijnL Jt Topt —20—+75 °C ÿB liDL Ä Tstg —40~ °C + D i m e n s io n s (Unit : mm


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    uPC574J pc574j sh03 5108a T108 HS 1621 UPC-574J XL08 LM 3323 PDF

    HT - 0886

    Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
    Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2


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    PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108 PDF

    BA1A4P

    Abstract: T108 02-WM RSL AH transistorBA1A4P
    Text: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^


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    CycleS50 BA1A4P T108 02-WM RSL AH transistorBA1A4P PDF

    AI820

    Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
    Text: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c


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    SC-43B Cycled50 AI820 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A PDF

    2SA1608

    Abstract: 2SC4173
    Text: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o


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    2SC4173 2SA1608 2SC4173 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC » f / 7s— 9 • 2 /— h C o m l i- r z T r a n s is t o r GN1L3M M « p o u n d p n p i 'J □ tt > A V =7 M T O O / N '^ ! mm 2.1 ±0.1 1.25 ±0.1 (R i =4.7 kQ, R 2= 4.7 k£2) O— W V R. O GA1L3M t =i > 7° U / > ? i) zl&Fìì T * & t „ ( T a = 25 °C


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    PWS10 CycleS50 PDF

    Untitled

    Abstract: No abstract text available
    Text: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &


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    iii25 PDF

    BA1A4M-T

    Abstract: BA1A4M 3773A T108 ptc T108 t0429
    Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]


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    PWS10 CycleS50 i0992 BA1A4M-T BA1A4M 3773A T108 ptc T108 t0429 PDF

    AH5E

    Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
    Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E


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    PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262 PDF

    6008A

    Abstract: B0952 nec 1251 T108 H052
    Text: Com pound T r a n s is t o r FN1A4P * £ Î/ lF * 3 1 P N P I t & • = !> V = 7 > i > ^ m ^ - f ï • mm) 0 ' < j T ?,}& }?[£ fàiië 1 1 È 1 0 ( R, = 10 kQ, R 2= 47 kQ) 2 .8 ± 0 .2 0 .6 5 Î";!: 1.5 O F A 1 A 4 P t =J > v ” IJ / > ? u Tê t t G


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    PWS10 CycleS50 6008A B0952 nec 1251 T108 H052 PDF

    2SK314

    Abstract: 4511 gm JE 33 5551a tt 22
    Text: NEC j m*Ti\rx A J u n c tio n Field E ffe c t T ra n s is to r 2SK314 m Silicon N-Channel Junction FET Audio Frequency Low Noise Amplifier Industrial Use Ü - E 1 /P A C K A G E DIM ENSIO NS ^ « /F E A T U R E S Unit : mm o ® iß « T " to NF = 1.0 dB TYP. (VDs = 10 V,Id = 5 mA,RG= 1.0 kQ,f=100 Hz)


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    2SK314 2SK314 4511 gm JE 33 5551a tt 22 PDF

    SD113

    Abstract: SD116 d11510 50117 SD117 SD115 042646 SD111 1866 sd1173
    Text: S 1 D 1 3 , S 1 D R 1 5 . S i S o f f ia SD 1 1 6 , 1 6 D 1 1 7 , S f it NEC Corporation 1988 : mm SD 1 1 7 vi^DHD (D o u b le H e a tsin k 7 ^ 'y — 1 K m SD 1 1 3 , SD 1 1 5 , D D io d e) ÿ 0.5 t f ¿ , -, sxnt £ & ^ è U "? T M & t ^ , f ^ i i i D H D f l l & i C j :


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    SD113 SD115 SD116 SD117 sd113, sd115, sd116, d11510 50117 SD117 042646 SD111 1866 sd1173 PDF