09005AEF811BA111 Search Results
09005AEF811BA111 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MT49H16M18CContextual Info: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) |
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288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C | |
MT49H32M18CContextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock |
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576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MT49H32M18C | |
09005aef815b2df8
Abstract: MT49H32M18C
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576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 09005aef815b2df8 MT49H32M18C | |
15READ
Abstract: marking ba5 MT49H8M18C MT49H16M18C
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288Mb: 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C 15READ marking ba5 MT49H16M18C | |
MT49H16M18CContextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O |
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288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C | |
RLDRAM
Abstract: MT49H16M18C
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288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C | |
MICRON BGA PART MARKING
Abstract: amd catalog MT49H32M18C
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576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MICRON BGA PART MARKING amd catalog MT49H32M18C | |
MT49H16M18CContextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization |
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288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C | |
MT49H16M18CContextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization |
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288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron MT49H16M18C | |
RLDRAM mt49h
Abstract: MT49H16M18C
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288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C | |
smd transistor marking HT1
Abstract: SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga
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576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 smd transistor marking HT1 SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga | |
smd transistor marking HT1
Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
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288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08 | |
MT49H32M18C
Abstract: 64 X 1 Dram controller
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576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 288Mb MT49H32M18C 64 X 1 Dram controller | |
MT49H16M36
Abstract: MT49H32M18C
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576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 MT49H16M36 MT49H32M18C | |
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