08MAY2008 Search Results

ENE3127B

Abstract: NDK America ndk TCXO STCD1020 STCD1020RDG6E STCD1030 STCD1040 STCD1040RDM6F TDFN12
Contextual Info: STCD1020, STCD1030, STCD1040 Multichannel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source

ene31

Contextual Info: STCD1020, STCD1030, STCD1040 Multichannel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source

GP19NC60kd

Abstract: GF19NC60KD GB19NC60KD
Contextual Info: STGB19NC60KD STGF19NC60KD - STGP19NC60KD 20 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling

2STA2121

Abstract: 2STC5949 JESD97
Contextual Info: 2STA2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features • High breakdown voltage VCEO = 250 V ■ Complementary to 2STC5949 ■ Fast-switching speed ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Applications ■

GP19NC60KD

Abstract: GF19NC60KD GF19NC60 GB19NC60KD STGF19NC60KD
Contextual Info: STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs

ENE3127B

Abstract: STCD1040RDM6F TDFN12 TDFN-12L NDK America ndk 10MHz STCD1020 STCD1020RDG6E STCD1030 STCD1040
Contextual Info: STCD1020, STCD1030, STCD1040 Multi-channel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source

Contextual Info: 2STA2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2STC5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC s ct u d o Application ■ r P e Audio power amplifier

gf19nc60kd

Abstract: STGP19NC60KD STGB19NC60KD STGB19NC60KDT4 STGF19NC60KD GP19NC60KD GB19NC60KD
Contextual Info: STGB19NC60KD STGF19NC60KD - STGP19NC60KD 20 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling

2sta2121

Abstract: 2STC5949 JESD97
Contextual Info: 2STA2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2STC5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ Audio power amplifier TO-264 Description The device is a PNP transistor manufactured

ENE3127B

Abstract: NDK America STCD1040RDM6F STCD1020 STCD1020RDG6E STCD1030 STCD1040 TDFN12 TDFN-10 iact
Contextual Info: STCD1020, STCD1030, STCD1040 Multichannel clock distribution circuit Features • 2, 3 or 4 outputs buffered clock distribution ■ Single-ended sine wave or square wave clock input and output ■ Individual clock enable for each output ■ Lower fan-out on clock source