08FEB01 Search Results

Contextual Info: S Ì1024X Vishay Siliconix VISHAY New Product Dual N-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY rDS(on) (&) lD (mA) 0.70 @ V GS = 4.5 V 600 0.85 @ V GS = 2.5 500 V d s (V) 20 M OSFETs V 1.8-V Rated (£) 350 1.25 @ VqS = 1 8 V ESD Protected 2000 V

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Abstract: Si1023X sot-563 MOSFET D1
Contextual Info: Si1023X New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D

Contextual Info: 8 T H IS D R A W IN G C C O P Y R I G H T RESERVED. IS U N P U B L IS H E D . I9 YR AMP BY PRO D UCTS MAY BE 6 7 DRAWING MADE IN THIRD ANGLE PROJECTION R ELEA S ED AMP FO R P U B L IC A T IO N IN C O R P O R A T E D . COVERED BY U .S . PU B D ATE H A R R IS B U R G . P A .

g0933

Abstract: 404G
Contextual Info: DRAWING THIS MADE DRAWI NG IN 4 THIRD ANGLE 15 U N P U B L I S H E D COPYRIGHT RELEASED 19 3 PROJECTION BY ANP FOR PUBLICATION INCORPORATED. ALL 2 INTERNATIONAL RIGHTS DI S T LOC 19 AJ RESERVED. R E V I 5 I ON' 16 ZONE D ESCRIRTIO N LTR R 0B5 -13 PER 0U20-0101-01

FTS256K

Abstract: HCS12 MASER FTS256K Block User Guide
Contextual Info: DOCUMENT NUMBER S12FTS256KV2/D FTS256K Block Guide V02.03 Original Release Date: 08 FEB 2001 Revised: 11 MAR 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. 1A PHOSPHOR BRONZE A GLASS F IL L E D POLYESTER !A 0. 7 6 j m M I N G O L D O V E R I . 2 7 j j m M I N N I C K E L ON C O N T A C T A R E A

BT 1840 PA

Contextual Info: T2801 DECT Single-Chip Transceiver Description The T2801 is an RF IC for low-power DECT applications. The HP-VFQFP-N48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,

FTS256K

Abstract: HCS12 ff092 FTS256K Block User Guide
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTS256KV3/D Freescale Semiconductor, Inc. FTS256K Block User Guide V03.00 Original Release Date: 08 FEB 2001 Revised: 16 OCT 2002 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

Si1413EDH

Contextual Info: SPICE Device Model Si1413EDH Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

S11016X

Abstract: 2sc 1014
Contextual Info: _S11016X Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY Vd N-Channel s r DS(on) (ß ) Id (m A ) M O SFETs 0 .7 0 V G S= 4.5 V 600 1.8-V Rated 0.85 @ V g s = 2.5 V

7150-1

Abstract: Si1410EDH 71501
Contextual Info: SPICE Device Model Si1410EDH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

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Abstract: Si1024X
Contextual Info: Si1024X New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOC AD 47 RE S E RV E D. R E V 1S I O N S D I ST p LTR A. PHOSPHOR BRONZE A lA GL A S S F I L L E D P O L Y E S T E R

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. 22.50 TYP -s H T - 2.50 TYP f\ m m m \ m 1A PHOSPHOR BRONZE A GLASS F I L L E D POLYESTER

FTS256K Block User Guide

Abstract: FTS256K ff092
Contextual Info: DOCUMENT NUMBER S12FTS256KV3/D FTS256K Block User Guide V03.01 Original Release Date: 08 FEB 2001 Revised: 8 APR 2003 Motorola, Inc Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

Automatic Voltage stabilizer 5 kw

Abstract: sfe 5.74 circuit diagram of sound wireless automatic Audio switch circuit diagram SFE 5.5 MC automatic stabilizer circuit diagram about SFE-5.5 U2860B-B U2860B-BFP audio squelch circuit design
Contextual Info: U2860B-B Dual-Channel FM Sound Demodulator for TV Systems Description The U2860B-B is a dual-channel FM sound demodulator realized with Atmel Wireless & Microcontrollers’ advanced bipolar process. All TV FM standards, from 4.5 up to 6.5 MHz standard M, B/G, I, D/K can be processed

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Abstract: Si1023X
Contextual Info: Si1023X New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. /h ft MIM I PHOSPHOR BRONZE A GLASS 1 0 L SIG NA L CONTACT TYP REP 10. A. p 47

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Abstract: Si1016X
Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400