08AUG2006 Search Results

JESD97

Abstract: STD100NH02L STD100NH02L-1 STD100NH02LT4
Contextual Info: STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark

Contextual Info: L9733 Octal self configuring low/high side driver Features • Eight independently self configuring low/high drivers ■ Supply voltage from 4.5V to 5.5V ■ RON max =0.7Ω @ Tj = 25°C, RON(max)=1.2Ω @Tj = 125°C ■ Minimum current limit of each output 1A

IN-67

Contextual Info: L9733 Octal self configuring low/high side driver Features • Eight independently self configuring low/high drivers ■ Supply voltage from 4.5 V to 5.5 V ■ RON max = 0.7 Ω @ Tj = 25 °C, RON(max) = 1.2 Ω @Tj = 125 °C ■ Minimum current limit of each output 1 A

JESD97

Abstract: STC5NF30V MOSFET MARKING ST
Contextual Info: STC5NF30V N-channel 30V - 0.027Ω - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET General features Type VDSS RDS on ID STC5NF30V 30V < 0.031 Ω ( @ 4.5 V ) < 0.035 Ω ( @ 2.7 V ) 5A • Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface

D15NF10

Abstract: STD15NF10 75A12 JESD97 STD15NF10T4
Contextual Info: STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type VDSSS RDS on max ID STD15NF10 100 V < 0.065 Ω 23 A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

Contextual Info: STD110NH02L N-channel 24V - 0.0044Ω - 80A - DPAK STripFET III Power MOSFET General features Type VDSSS RDS on ID STD110NH02L 24V <0.0048Ω 80A(1) 3 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC ES R 1G H T S R E S E RV E D. R E V 1S I O N S DIST 00 P LTR D D2 D3 D4 MATERIAL: T HERMO PLASTIC,

D110NH02L

Abstract: JESD97 STD110NH02L STD110NH02LT4
Contextual Info: STD110NH02L N-channel 24V - 0.0044Ω - 80A - DPAK STripFET III Power MOSFET General features Type VDSSS RDS on ID STD110NH02L 24V <0.0048Ω 80A(1) 3 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced

D12NF

Abstract: D12NF06L 20K60 STD12NF06L-1 JESD97 STD12NF06L STD12NF06LT4
Contextual Info: STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06L STD12NF06L-1 60V 60V <0.1Ω <0.1Ω 12A 12A 3 3 2 1 • Exceptional dv/dt capability ■ Low gate charge DPAK

D15NF10

Abstract: STD15NF10T4 JESD97 STD15NF10 D15NF
Contextual Info: STD15NF10 N-channel 100V - 0.060Ω - 23A - DPAK Low gate charge STripFET II Power MOSFET General features Type VDSSS RDS on ID STD15NF10 100V <0.065Ω 23A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

Contextual Info: L9733 Octal self configuring low/high side driver Features • Eight independently self configuring low/high drivers ■ Supply voltage from 4.5 V to 5.5 V ■ RON max = 0.7  @ Tj = 25 °C, RON(max) = 1.2  @Tj = 125 °C ■ Minimum current limit of each output 1 A

ST Low Forward Voltage Schottky Diode sod 323

Abstract: SOD123 footprint BAT48ZFILM DIODE bat48 SOD-123 marking code a2 BAT48 BAT48JFILM JESD97 automotive ecu circuit diode marked 45 sod323
Contextual Info: BAT48 Series Small signal Schottky diodes Main product characteristics IF 350 mA VRRM 40 V C typ 18 pF Tj (max) 150° C BAT48ZFILM (Single) SOD-123 Features and benefits BAT48JFILM (Single) • Low leakage current losses ■ Negligible switching losses ■

Schottky

Abstract: SOD123 footprint marking code 153 DIODE sod 23 BAT48JFILM ST Low Forward Voltage Schottky Diode sod 323 SOD-123 marking code A1 SOD-323 marking code a2 12634 NV SOD MARKING CODE
Contextual Info: BAT48 Small signal Schottky diode Features • Low leakage current losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode BAT48ZFILM Single SOD-123

Contextual Info: BAT41 Low capacitance small signal Schottky diodes Features BAT41ZFILM Single • Low leakage current losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode

Automotive HSD harness Connector

Abstract: 18V relay latch
Contextual Info: L9733 Octal self configuring low/high side driver Features • Eight independently self configuring low/high drivers ■ Supply voltage from 4.5 V to 5.5 V ■ RON max = 0.7 Ω @ Tj = 25 °C, RON(max) = 1.2 Ω @Tj = 125 °C ■ Minimum current limit of each output 1 A

Contextual Info: ImageCraft Product Features Overview Page 1 of 3 Product Features Overview 08-Aug-2006 Product Target CPU's Code Code Code Application Memory Debuggers Optim Browser Compressor Builder Size ICCV7 for AVR: Standard Atmel up to 64K AVRs & bytes MegaAVRs

D100N

Abstract: JESD97 STD100NH02L STD100NH02L-1 STD100NH02LT4
Contextual Info: STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark

D16NE10L

Abstract: JESD97 STD16NE10L STD16NE10LT4
Contextual Info: STD16NE10L N-channel 100V - 0.07Ω - 16A - DPAK STripFET Power MOSFET General features Type VDSSS RDS on ID STD16NE10L 100V <0.10Ω 16A 3 • Avalanche rugged technology ■ Low gate charge ■ High current capability ■ 175°C operating temperature

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR D9 DESCRIPTION DATE ADD NEW DASH NUMBER -19 DWN APVD ML 09AUG2012 SZ d9 2 D 1 MATERIAL: THERMO PLASTIC, UL94 V-0.

x0602

Abstract: scr x0602 x0602 ma x00605 X0602MA X00602A X006 MARKING CODE CGK x0602 st x0602 datasheet
Contextual Info: X006 0.8 A sensitive gate SCRs Features • IT RMS = 0.8 A ■ VDRM/VRRM = 600 V ■ IGT = 200 µA A G K Description Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such

D100NH03L

Abstract: JESD97 STD100NH03L STD100NH03LT4
Contextual Info: STD100NH03L N-channel 30V - 0.005Ω - 60A - DPAK STripFET III Power MOSFET General features 1. Type VDSSS RDS on ID STD100NH03L 30V <0.0055Ω 60A(1) Value limited by wire bonding 3 • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced

Contextual Info: PD57045-E PD57045S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13dB gain @ 945 MHz / 28 V ■ New RF plastic package

keypad 3x4

Abstract: 3x4 KEYPAD datasheet keypad 3x4 DB9 dwg KF33BDT-TR ST3232CDR M95080-WMNP STEVAL-IAS001V1 BAT54JFILM ST7FLITE39F2M6
Contextual Info: A B C PB5 M95080-WMNP VCC 9 8 7 * # 6 5 SCK MOSI 4 8 7 6 5 3 1 O KF33BDT-TR S# VCC Q HOLD W C VSS D U3 KEYPAD 3X4 1 2 3 4 I EEPROM 100nF 2 SS MISO C1 3 1 R11 10k VCC JACK 3 2 1 U1 POWER SUPPLY 1 G 2 4.3V~20V J1 PA4 10k R4 D1 PA0 PA3 ICCCLK ICCDATA 2 R6 VCC=3.3V 150~200mA

bat41 600

Abstract: BAT41 equivalent s41 523 Diode BAT41 SOD123 Z41 bat41 SOT 23 Z41 BAT41KFILM BAT41SWFILM BAT41-09P6FILM
Contextual Info: BAT41 Series Low capacitance small signal Schottky diodes Main product characteristics IF 200 mA VRRM 100 V C typ 3 pF Tj (max) 150° C BAT41ZFILM (Single) SOD-123 BAT41JFILM (Single) Features and benefits • Low leakage current losses ■ Negligible switching losses