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    Kyocera AVX Components 08055A101FAT2A

    Multilayer Ceramic Capacitor, 100 pF, 50 V, ? 1%, C0G (NP0), 0805 [2012 Metric] - Tape and Reel (Alt: KGM21BCG1H101FT)
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    Avnet Americas 08055A101FAT2A Reel 12 Weeks 4,000
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    Mouser Electronics 08055A101FAT2A 8,282
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    Newark 08055A101FAT2A Cut Tape 709 10
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    08055A101FAT2A Reel 8,000
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    Future Electronics 08055A101FAT2A Reel 14 Weeks 4,000
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    08055A101FAT2A Reel 12 Weeks 4,000
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    Bristol Electronics 08055A101FAT2A 8,748
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    Quest Components 08055A101FAT2A 3,200
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    08055A101FAT2A 520
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    TME 08055A101FAT2A 4,000
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    Gudeco Elektronik 08055A101FAT2A 4,000
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    Avnet Abacus 08055A101FAT2A Reel 8,000 14 Weeks 4,000
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    Avnet Asia 08055A101FAT2A 14 Weeks 4,000
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    Chip One Stop 08055A101FAT2A Cut Tape 1,223
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    New Advantage Corporation 08055A101FAT2A 12,000 1
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    Kyocera AVX Components KGM21BCG1H101FT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 100pF C0G 0805 1 %
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    Mouser Electronics KGM21BCG1H101FT 7,240
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    TTI KGM21BCG1H101FT Reel 4,000
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    Kyocera AVX Components 08055A101FAT4A

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM21BCG1H101FM NEW GLOBAL PN 50V 100pF A 581-KGM21BCG1H101FM
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    Mouser Electronics 08055A101FAT4A
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    KYOCERA AVX Components 08055A101FAT2A

    Cap Ceramic 100pF 50V C0G 1% Pad SMD 0805 125°C T/R
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    Verical 08055A101FAT2A 1,223 132
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    08055A101FAT2A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    08055A101FAT2A AVX CAP 100PF 50V 1% NP0(C0G) SMD-0805 TR-7 PLATED-NI/SN Original PDF

    08055A101FAT2A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12065A104JAT2A

    Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
    Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •


    Original     		MMG2401 MMG2401R2 12065A104JAT2A F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION


    Original     		MMG5004N MMG5004NR2 PDF

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		MMG2401 MMG2401NR2 12065A104JAT2A PDF

    12065A104JAT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		MMG2401 MMG2401NR2 MMG2401 12065A104JAT2A PDF

    12065A104JAT2A

    Abstract: 12065A103JAT2A RF Product Device Data
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • • Power Gain: 27.5 dB Typ @ f = 2450 MHz, Class AB


    Original     		MMG2401R2 MMG2401R2 12065A104JAT2A 12065A103JAT2A RF Product Device Data PDF

    ML200M

    Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		MMG2401 MMG2401NR2 ML200M F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3


    Original     		MMG5004N MMG5004NR2 MMG5004N PDF

    Schematics 5250

    Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
    Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz


    Original     		MMG5004N MMG5004NR2 Schematics 5250 schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22 PDF

    12065A104JAT2A

    Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
    Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz


    Original     		MMG2401 MMG2401NR2 12065A104JAT2A 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 PDF