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    07N60C3 Search Results

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    07N60C3 Price and Stock

    Infineon Technologies AG SPD07N60C3ATMA1

    LOW POWER_LEGACY
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    DigiKey SPD07N60C3ATMA1 Cut Tape 4,353 1
    • 1 $3.17
    • 10 $2.063
    • 100 $3.17
    • 1000 $1.07698
    • 10000 $1.07698
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    SPD07N60C3ATMA1 Digi-Reel 4,353 1
    • 1 $3.17
    • 10 $2.063
    • 100 $3.17
    • 1000 $1.07698
    • 10000 $1.07698
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    SPD07N60C3ATMA1 Reel 2,500 2,500
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    • 10000 $1.02925
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    Avnet Americas SPD07N60C3ATMA1 Reel 22,500 15 Weeks 2,500
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    • 10000 $0.60075
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    Mouser Electronics SPD07N60C3ATMA1 241
    • 1 $2.46
    • 10 $1.74
    • 100 $1.3
    • 1000 $1.06
    • 10000 $1
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    Newark SPD07N60C3ATMA1 Cut Tape 862 1
    • 1 $2.56
    • 10 $1.93
    • 100 $1.51
    • 1000 $1.13
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    EBV Elektronik SPD07N60C3ATMA1 16 Weeks 2,500
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    Infineon Technologies AG SPP07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-3
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    DigiKey SPP07N60C3XKSA1 Tube 577 1
    • 1 $3.27
    • 10 $3.27
    • 100 $3.27
    • 1000 $1.11736
    • 10000 $1.07438
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    Mouser Electronics SPP07N60C3XKSA1 896
    • 1 $2.7
    • 10 $1.35
    • 100 $1.27
    • 1000 $1.07
    • 10000 $1.05
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    Newark SPP07N60C3XKSA1 Bulk 1,636 1
    • 1 $2.82
    • 10 $2.11
    • 100 $1.39
    • 1000 $1.11
    • 10000 $1.11
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    Rochester Electronics SPP07N60C3XKSA1 36 1
    • 1 $1.19
    • 10 $1.19
    • 100 $1.12
    • 1000 $1.01
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    EBV Elektronik SPP07N60C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPA07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-FP
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    DigiKey SPA07N60C3XKSA1 Tube 461 1
    • 1 $3.08
    • 10 $3.08
    • 100 $3.08
    • 1000 $1.0426
    • 10000 $0.991
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    Newark SPA07N60C3XKSA1 Bulk 530 1
    • 1 $2.45
    • 10 $2.04
    • 100 $1.62
    • 1000 $1.16
    • 10000 $1.06
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    Rochester Electronics SPA07N60C3XKSA1 100 1
    • 1 $1.1
    • 10 $1.1
    • 100 $1.03
    • 1000 $0.935
    • 10000 $0.935
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    Chip1Stop SPA07N60C3XKSA1 Tube 5,988
    • 1 $2.39
    • 10 $1.22
    • 100 $1.04
    • 1000 $0.986
    • 10000 $0.931
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    EBV Elektronik SPA07N60C3XKSA1 16 Weeks 500
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    Infineon Technologies AG SPD07N60C3

    MOSFET N-CH 600V 7.3A TO252-3
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    ComSIT USA SPD07N60C3 2,245
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    Infineon Technologies AG SPP07N60C3HKSA1

    MOSFET N-CH 650V 7.3A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP07N60C3HKSA1 Tube 500
    • 1 -
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    • 1000 $1.00778
    • 10000 $1.00778
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    Find more 07N60C3 price and stock on Findchips.com

    07N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60

    Abstract: 07N60C3
    Text: Final data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12

    smd marking g12

    Abstract: No abstract text available
    Text: 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB07N60C3 P-TO263-3-2 07N60C3 SPB07N60C3 Q67040-S4394 smd marking g12

    07N60C3

    Abstract: 07n60c
    Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c

    07N60C3

    Abstract: No abstract text available
    Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3

    07n60c3

    Abstract: 07N60C3 SMD
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD

    SPA07N60C3

    Abstract: No abstract text available
    Text: 07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated


    Original     		PDF SPA07N60C3 P-TO220-3-31 07N60C3 P-TO220-3-31 Q67040-S4409 SPA07N60C3

    07N60C3

    Abstract: 07n60c 07n60
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60

    Untitled

    Abstract: No abstract text available
    Text: 07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Text: Final data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3

    Q67040-S4423

    Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 Q67040-S4423 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Text: 07N60C3, 07N60C3 07N60C3, 07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12

    07N60C3

    Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3

    07N60C3

    Abstract: Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: 07N60C3 07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 07N60C3 Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3

    AR4100

    Abstract: Q67040-S4423
    Text: 07N60C3 07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 AR4100 Q67040-S4423

    Untitled

    Abstract: No abstract text available
    Text: 07N60C3 07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1

    07n60c3

    Abstract: 07n60c AR4100
    Text: 07N60C3 07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07n60c AR4100

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07N60C3 equivalent

    Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 equivalent 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data 07N60C3, 07N60C3 07N60C3, 07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3

    07n60c3

    Abstract: 07N60C3 equivalent PG-TO263-3-2 SDP06S60 SPB07N60C3 SPP07N60C3
    Text: 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3 07n60c3 07N60C3 equivalent PG-TO263-3-2 SDP06S60 SPB07N60C3 SPP07N60C3

    SPI07N60C3 SMD

    Abstract: No abstract text available
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 SPI07N60C3 SMD

    07N60C3

    Abstract: PG-TO220-3-31
    Text: 07N60C3 07N60C3, 07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: 07N60C3