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    06OCT2004 Search Results

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    F5NK90Z

    Abstract: JESD97 P5NK90Z STF5NK90Z STP5NK90Z MOSFET 900V TO-220
    Text: STP5NK90Z STF5NK90Z N-channel 900V - 2Ω - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESH MOSFET General features Type VDSS @Tjmax RDS(on) ID PW 4.5 A 125W STP5NK90Z 900 V < 2.5 Ω STF5NK90Z 900 V < 2.5 Ω 4.5 A(1) 30W 3 1. Limited only by maximum temperature allowed


    Original     		PDF STP5NK90Z STF5NK90Z O-220/TO-220FP O-220 F5NK90Z JESD97 P5NK90Z STF5NK90Z STP5NK90Z MOSFET 900V TO-220

    TDA8177F

    Abstract: ASE LQFP 208 TDA8177F EQUIVALENT 144L 176L E-TDA8177F J-STD-020B electroplating HEPTAWATT* jedec Q4-04
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CMG-DTV/04/743 TDA8177F : switch to E-TDA8177F 2004/10/6 PCN CMG-DTV/04/743 Product Family /Commercial Product TDA8177F Type Of Change Package assembly material change Reason For Change New material : eco package Description of change


    Original     		PDF CMG-DTV/04/743 TDA8177F E-TDA8177F 17-Jan-2005 06-Oct-2004 TDA8177F ASE LQFP 208 TDA8177F EQUIVALENT 144L 176L E-TDA8177F J-STD-020B electroplating HEPTAWATT* jedec Q4-04

    JESD97

    Abstract: STE50DE100
    Text: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		PDF STE50DE100 STE50DE100 JESD97

    BACC65Bc

    Abstract: 3/BACC65BC2A te 1569
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST - P LTR H DESCRIPTION DATE REV PER ECO 13-008491 DWN APVD CT 6-3-13 DM 1.309 1.217 .158 +.001 -.003 CIRCUIT #1 IDENTIFER INDENT


    Original     		PDF 06OCT2004 BACC65BC2N BACC65Bc 3/BACC65BC2A te 1569

    P5NK90Z

    Abstract: F5NK90Z JESD97 STF5NK90Z STP5NK90Z
    Text: STP5NK90Z STF5NK90Z N-channel 900V - 2Ω - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESH MOSFET General features Type VDSS @Tjmax RDS(on) ID PW 4.5 A 125W STP5NK90Z 900 V < 2.5 Ω STF5NK90Z 900 V < 2.5 Ω 4.5 A(1) 30W 3 1. Limited only by maximum temperature allowed


    Original     		PDF STP5NK90Z STF5NK90Z O-220/TO-220FP O-220 O-220FP P5NK90Z F5NK90Z JESD97 STF5NK90Z STP5NK90Z

    d2nk9

    Abstract: d2nk90z D2NK90 P2NK90Z d2nk zener diode 21a JESD97 STD2NK90Z STD2NK90Z-1 STD2NK90ZT4
    Text: STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on (@Tjmax) ID PW STD2NK90Z 900V <6.5Ω 2.1A 70W STD2NK90Z-1 900V <6.5Ω 2.1A 70W STP2NK90Z 900V <6.5Ω


    Original     		PDF STP2NK90Z STD2NK90Z STD2NK90Z-1 O-220 STP2NK90Z O-220 d2nk9 d2nk90z D2NK90 P2NK90Z d2nk zener diode 21a JESD97 STD2NK90Z STD2NK90Z-1 STD2NK90ZT4

    schematic diagram welding device

    Abstract: cascode mosfet switching STE50DE100 ic 1240 equivalent ics ultra low Ciss
    Text: STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE Figure 1: Package Table 1: General Features n n n n n VCS ON IC RCS(ON) 1.3 V 50 A 0.026 W HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON


    Original     		PDF STE50DE100 STE50DE100 schematic diagram welding device cascode mosfet switching ic 1240 equivalent ics ultra low Ciss

    JESD97

    Abstract: STE50DE100 mosfet 1000v
    Text: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		PDF STE50DE100 STE50DE100 JESD97 mosfet 1000v