Untitled
Abstract: No abstract text available
Text: M29KW032E 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V
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M29KW032E
100ns
0020h
88ACh
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Untitled
Abstract: No abstract text available
Text: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
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M59PW016
110ns
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23NOV2004
Abstract: STIL04-P5 STIL04-T5 STIL06-T5 STIL08-T5 resistor AC INRUSH CURRENT LIMITER
Text: STIL AC INRUSH CURRENT LIMITER ASD APPLICATIONS TAB • ■ ■ ■ ■ High power density switching power supply Server and Telecom power supplies Game station power supplies High end TV displays Portable equipment adaptators 5 23 ■ ■ ■ ■ Replaces two diodes of the bridge in steady
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IEC61000-4-5
STIL06-T5
STIL04-T5
STIL08-T5
STIL04-P5
STIL06T5
STIL08-thout
23NOV2004
STIL04-P5
STIL04-T5
STIL06-T5
STIL08-T5
resistor AC INRUSH CURRENT LIMITER
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Untitled
Abstract: No abstract text available
Text: M29KW016E 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Read Figure 1. Packages – VPP = 11.4V to 12.6V for Program and Erase ■ ■ ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V
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M29KW016E
100ns
0020h
88ABh
TSOP48
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
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M27W032
110ns
0020h
888Eh
TSOP48
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Untitled
Abstract: No abstract text available
Text: M27W064 64 Mbit 4Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
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M27W064
110ns
0020h
888Ah
TSOP48
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Untitled
Abstract: No abstract text available
Text: M59PW032 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
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PDF
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M59PW032
110ns
0020h
88AEh
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Untitled
Abstract: No abstract text available
Text: M29KW064E 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC= 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V
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M29KW064E
100ns
0020h
88AFh
TSOP48
TFBGA48
2005ange
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Untitled
Abstract: No abstract text available
Text: EVERLIGHTELECTRONICS CO.,LTD. Technical Data Sheet TOP View LEDs Preliminary 67-31B SURC/S833/TR8 Features ˙PLCC-2 package. ˙High flux output. ˙High current capability. ˙White package. ˙Optical indicator. ˙Colorless clear window. ˙Ideal for backlight and light pipe application.
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67-31B
SURC/S833/TR8
67-21B
06-Dec-2005
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Untitled
Abstract: No abstract text available
Text: M59PW1282 128Mbit two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE TWO 64 Mbit LightFlash™ MEMORIES STACKED IN A SINGLE PACKAGE
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M59PW1282
128Mbit
120ns
0020h
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Untitled
Abstract: No abstract text available
Text: M27W016 16 Mbit 1Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 80ns at VCC = 3.0 to 3.6V
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M27W016
110ns
TSOP48
0020h
888Dh
PDIP42
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W30NM60
Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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STW30NM60D
O-247
W30NM60
ZVS phase-shift converters
STW30NM60D
W30NM60D
mosfet 600V 30A
JESD97
25C312
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Untitled
Abstract: No abstract text available
Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage
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M36W0R6050T1
M36W0R6050B1
M36W0R6050T1:
8810h
M36W0R6050B1:
8811h
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A0-A21
Abstract: M36W0R6050B1 M36W0R6050T1
Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
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M36W0R6050T1
M36W0R6050B1
M36W0R6050T1:
8810h
M36W0R6050B1:
8811h
TFBGA88
128-bit
64-bit
A0-A21
M36W0R6050B1
M36W0R6050T1
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Numonyx
Abstract: A0-A21 M36W0R6050B1 M36W0R6050T1
Text: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
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M36W0R6050T1
M36W0R6050B1
M36W0R6050T1:
8810h
M36W0R6050B1:
8811h
TFBGA88
128-bit
Numonyx
A0-A21
M36W0R6050B1
M36W0R6050T1
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AC INRUSH CURRENT 1000A LIMITER
Abstract: AC INRUSH CURRENT LIMITER 23NOV2004 STIL06-T5 STIL04-P5 STIL04-T5 STIL08-T5 resistor AC INRUSH CURRENT LIMITER Inrush Current Limitation Device for Off-Line Power
Text: STIL AC INRUSH CURRENT LIMITER ASD APPLICATIONS TAB High power density switching power supply Server and Telecom power supplies Game station power supplies High end TV displays Portable equipment adaptators • ■ ■ ■ ■ 5 23 ■ ■ ■ TAB BENEFITS
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STIL04-T5
STIL08-T5
STIL04-P5
STIL06T5
STIL08T5
STIL04T5
STIL04P5
AC INRUSH CURRENT 1000A LIMITER
AC INRUSH CURRENT LIMITER
23NOV2004
STIL06-T5
STIL04-P5
STIL04-T5
STIL08-T5
resistor AC INRUSH CURRENT LIMITER
Inrush Current Limitation Device for Off-Line Power
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Untitled
Abstract: No abstract text available
Text: M59PW064 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC= 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program
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M59PW064
110ns
0020h
88AAh
TSOP48
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TSOP48 outline
Abstract: No abstract text available
Text: M27W016 16 Mbit 1Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 80ns at VCC = 3.0 to 3.6V
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M27W016
110ns
TSOP48
0020h
888Dh
PDIP42
SDIP42
TSOP48 outline
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Untitled
Abstract: No abstract text available
Text: M27W064 64 Mbit 4Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
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M27W064
110ns
0020h
888Ah
TSOP48
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STW30NM60D
Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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STW30NM60D
O-247
STW30NM60D
JESD97
ZVS phase-shift converters
mosfet 600V 100A ST
15A16s
W30NM60
W30NM60D
25C312
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RFID loop antenna 13.56MHz spiral
Abstract: RFID loop antenna 13.56MHz Round loop antenna for 13.56MHz RFID loop antenna RFID loop antenna 13.56MHz coil planar spiral coil wurth 742 792 04 18 13.56MHz Reader antenna designing 13.56MHZ RFID matching AN1806
Text: AN1806 APPLICATION NOTE Antenna and Associated Components Matching-Circuit Calculation for the CRX14 Coupler In the basic RFID system (as shown in Figure 1): 1. The Reader generates an electromagnetic field. This field is rectified to generate the supply voltage inside the Tag.
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AN1806
CRX14
AN1806
RFID loop antenna 13.56MHz spiral
RFID loop antenna 13.56MHz
Round loop antenna for 13.56MHz
RFID loop antenna
RFID loop antenna 13.56MHz coil
planar spiral coil
wurth 742 792 04 18
13.56MHz Reader antenna designing
13.56MHZ RFID matching
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STW30NM60D
Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STW30NM60D
O-247
O-247
STW30NM60D
15a diode
W30NM60
ZVS phase-shift converters
W30NM60D
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Untitled
Abstract: No abstract text available
Text: STIL AC INRUSH CURRENT LIMITER ASD APPLICATIONS TAB • ■ High power density switching power supply Server and Telecom power supplies Game station power supplies High end TV displays Portable equipment adaptators s t c u d o ) r s ( P t c e t u e
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IEC61000-4-5
STIL06-Tthout
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T-019
Abstract: T019
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. FT DIST R E V IS IO N S LTR A1 DESCRIPTION DATE / REVISED PER E C Q - 0 6 - 2 5 2 7 2 6 /0 6 DWN APVD SS CR MATERIALS: HOUSING: POLYAMIDE 66, U L 9 4 V - 0 , GREEN.
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OCR Scan
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PDF
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ECQ-06-2527
UL94V-0,
2000VAC
2000Mohm,
500VDC
06DEC2005
31MAR2000
T-019
T019
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