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    06C00 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    9FGV1006C002LTGI8 Renesas Electronics Corporation Programmable PhiClock™ Generator Visit Renesas Electronics Corporation
    9FGV1006C001LTGI Renesas Electronics Corporation Programmable PhiClock™ Generator Visit Renesas Electronics Corporation
    9FGV1006C001LTGI8 Renesas Electronics Corporation Programmable PhiClock™ Generator Visit Renesas Electronics Corporation
    9FGV1006C002LTGI Renesas Electronics Corporation Programmable PhiClock™ Generator Visit Renesas Electronics Corporation
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    Advanced Energy Industries Inc LGA06C-00SADJJ

    DC DC CONVERTER 0.59-5.1V 30W
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    DigiKey LGA06C-00SADJJ Cut Tape 3,124 1
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    Advanced Energy Industries Inc LDO06C-005W05-HJ

    DC DC CONVERTER 0.59-5.1V 30W
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    DigiKey LDO06C-005W05-HJ Tray 337 1
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    Advanced Energy Industries Inc LDO06C-005W05-VJ

    DC DC CONVERTER 0.59-5.1V 30W
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    DigiKey LDO06C-005W05-VJ Tray 182 1
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    Advanced Energy Industries Inc LDO06C-005W05-SJ

    DC DC CONVERTER 0.59-5.1V 30W
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    DigiKey LDO06C-005W05-SJ Tray 107 1
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    Red Lion Controls G306C000

    HMI OPERATOR PANEL 5.7" COLOR
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    DigiKey G306C000 5
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    06C00 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430F677x, MSP430F676x, MSP430F674x www.ti.com SLAS768D – SEPTEMBER 2012 – REVISED DECEMBER 2013 Polyphase Metering SoCs FEATURES 1 • 2 • • • • • • • • • • • • • •


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    5E002 MSP430F677x, MSP430F676x, MSP430F674x SLAS768D PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    tc58nc

    Abstract: tc58nc344 TC58NC353F DIN 50960 TC58NC353 47040 250880 c58nc 05735A00 031C4
    Text: TC58NC353F/354F TC58NC353F/354F High Capacity Flash Disk Controller Chip Set OUTLINE TC58NC353 and TC58NC354 are a controller chip set for the PC Card ATA * and IDE Drive. By using TC58NC353 only, up to 8 NAND flash memories of 128M to 1Gbit can be connected by the unit of 1 (e.g. 1,2,3…7,8). In case of


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    TC58NC353F/354F TC58NC353 TC58NC354 TC58NC353 3920Mbytes tc58nc tc58nc344 TC58NC353F DIN 50960 47040 250880 c58nc 05735A00 031C4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of


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    R8C/38T-A R01DS0081EJ0100 R8C/38TA PDF

    M29W128GL

    Abstract: M29W128GH70 M29W128G M29W128GL7
    Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


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    M29W128GH M29W128GL 128-Mbit 64-byte M29128GH/L: Kbytes/64 M29W128GL M29W128GH70 M29W128G M29W128GL7 PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G1C User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RL78/G1C 16-Bit R01UH0348EJ0110 PDF

    ST3215

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RL78/G13 16-Bit R01UH0146EJ0310 ST3215 PDF

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29LV2562M 120R C8800 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, PDF

    BCM 4709

    Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
    Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、


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    78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841 PDF

    uPD78F1024

    Abstract: F0648H nec f0123h nec f0134H F0616 842 623 smd nec 501 t 2 prot usb 2.0 hab Controller F0543 st stt 128
    Text: User’s Manual 78K0R/KC3-L, 78K0R/KE3-L On-Chip USB Controller 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers PD78F1022 μPD78F1023 μPD78F1024 μPD78F1025 μPD78F1026 All information contained in these materials, including products and product specifications,


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    78K0R/KC3-L, 78K0R/KE3-L 16-Bit PD78F1022 PD78F1023 PD78F1024 PD78F1025 PD78F1026 current600, uPD78F1024 F0648H nec f0123h nec f0134H F0616 842 623 smd nec 501 t 2 prot usb 2.0 hab Controller F0543 st stt 128 PDF

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    Am29LV256M L256MH113R L256ML113R PDF

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G PDF

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300 PDF

    R5F21368snfp

    Abstract: 06B2D 0025DH 00285H
    Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of


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    R8C/36T-A R01DS0055EJ0100 R8C/36TA R5F21368snfp 06B2D 0025DH 00285H PDF

    M29DW127G

    Abstract: No abstract text available
    Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


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    M29W128GH M29W128GL 128-Mbit 64-byte M29128GH/L: Kbytes/64 M29DW127G PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    06B2D

    Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
    Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides


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    R8C/38T-A R01DS0081EJ0001 R8C/38TA 06B2D 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13 PDF