06AUG12 Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - By - 6 5 4 2 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. LOC DIST CM 54 R E VIS IO N S LTR DESCRIPTION REVISED PER E C O - 12 - 0 0 7 8 0 7 DATE DWN APVD 06AUG12 KH SM 1 UNIT ACCEPTS 1.14 [.045] SQUARE OR ROUND POST.

Contextual Info: VEMI85AC-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100  • Typical cut off frequency f3dB = 240 MHz

Contextual Info: VEMI85LA-HGK www.vishay.com Vishay Semiconductors 8-Channel LCR - EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel LCR EMI-filter • Low leakage current • Line inductance LS = 10 nH

Contextual Info: VS-GB400AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VEMI85AC-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100  • Typical cut off frequency f3dB = 240 MHz

Contextual Info: Model 23 www.vishay.com Vishay Spectrol Multidial 10 Turns 30.6 mm Diameter Projecting Design FEATURES • Black body, satin face with chrome ring • White three digit markings on black background • Additional graduations for fine adjustment • Protective window

VS-GT100TP120N

Contextual Info: VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES • Low VCE sat trench IGBT technology • 10 s short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C

Contextual Info: VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C

Contextual Info: VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES • • • • • High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD

capacitors 104

Abstract: r. 46 mkp x2 E354331 BFC2 435
Contextual Info: Not for New Design - Alternative Series MKP338 1 X1 MKP336 1 X1 www.vishay.com Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES • 15 mm to 27.5 mm lead pitch. Supplied in box, taped on ammopack or reel • Material categorization:

Contextual Info: VEMI85AC-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100  • Typical cut off frequency f3dB = 240 MHz

Contextual Info: VS-GB100LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: Model 18 www.vishay.com Vishay Spectrol Model 18 PR2 22.2 mm Diameter, 15 Turn Dial FEATURES • No backlash • Compact-requires minimal panel space (22.2 mm diameter requirement) • For use with precision potentiometers or other rotating devices, up to 15 turns

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION - 5 6 4 2 3 . ALL RIGHTS RESERVED. By - LOC DIST CM 00 REVISIONS LTR DESCRIPTION AB 00.25 E C O - 12 - 0 0 2 3 7 3 POST TO WITHSTAND 13 NEWTONS 3 LBS IN BOTH DIRECTIONS SHOWN WITHOUT DISLODGING.

Contextual Info: VS-GB300AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VS-GB50NP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES • • • • • High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD

Contextual Info: VEMI85LA-HGK www.vishay.com Vishay Semiconductors 8-Channel LCR - EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel LCR EMI-filter • Low leakage current • Line inductance LS = 10 nH

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2425 MHz 18.0 VDC 2820 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -2.5 +2.5 dBm 35 mA Supply Current: nd

SC-100 JEDEC

Contextual Info: SA, SB, SC www.vishay.com Vishay Sfernice Current Sensing Wirebondable Thin Film Chip Resistors FEATURES • Low ohmic value down to 0.05  • Tolerance down to 1 % • Stability 0.1 % < 2000 h at Pn at + 70 °C • Low noise < - 35 dB • Low TCR 100 ppm/°C

Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters inches Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

MODEL SA

Abstract: pn 2020 a
Contextual Info: SA, SB, SC www.vishay.com Vishay Sfernice Current Sensing Wirebondable Thin Film Chip Resistors FEATURES • Low ohmic value down to 0.05  • Tolerance down to 1 % • Stability 0.1 % < 2000 h at Pn at + 70 °C • Low noise < - 35 dB • Low TCR 100 ppm/°C

62502

Contextual Info: SPICE Device Model Si3585CDV www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si88

Abstract: si8817
Contextual Info: Si8817DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.076 at VGS = - 4.5 V - 2.9 0.100 at VGS = - 2.5 V - 2.5 0.145 at VGS = - 1.8 V - 2.1 0.320 at VGS = - 1.5 V - 0.5 VDS (V)

Contextual Info: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C