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Abstract: No abstract text available
Text: Product catalogue | Terminals | Screwing technology | SAK-series modular terminals | TS 35 | Germin KrG | Special terminals SAKG | 95 mm² General ordering data Order No. Part designation Version EAN Qty. Product notes Note, technical data 0637520000 SAKG 40/35 I
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cross-section195
EC000897
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LINDNER fuses
Abstract: diazed fuse d10 LINDNER Wickmann USA Electrical Fuse 3.6 KV, 315A Neozed weidmuller fuse sak 0456360000 M3X22 IEC 947-7-1 052766-000
Text: SAK-series 124 SAK-series Weidmüller terminal - SAK-series- are proved in millions of applications for more than 50 years. TS 32 TS 35 Thermosetting plastic or Thermoplastic Terminal of thermosetting plastic are normally used in applications where high continuous service temperature and high
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NTC Thermistor 100 KOhm
Abstract: ZCS buck converter socket A 462 motherboard diagram ADP3209CJCPZ-RL
Text: 5-Bit, Programmable, Single-Phase, Synchronous Buck Controller ADP3209C FEATURES GENERAL DESCRIPTION Single-chip solution Fully compatible with the Intel GMCH chipset voltage regulator specifications Integrated MOSFET drivers Input Voltage Range of 3.3 V to 22 V
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ADP3209C
NTC Thermistor 100 KOhm
ZCS buck converter
socket A 462 motherboard diagram
ADP3209CJCPZ-RL
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Untitled
Abstract: No abstract text available
Text: MECXKaUPConv X-band to Ka-band UP-Converter Main Features • RF Output Frequency: 30 -31 GHz • LO Input Frequency: 22 GHz • IF Input Frequency: 8 -9 GHz • More than 11 dB Conversion Gain • 29 dBm OTOI • 30 dBc LO Isolation Product Description • Bias: Vd = 2.8 V, Idq = 320 mA,
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Abstract: No abstract text available
Text: MECGaNX13 8.6 to 10.4 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.6 – 10.4 GHz full performances Frequency Range 13W Output Power @ Pin 24 dBm 40% PAE @ Pin 24 dBm 24 dB Linear Gain Bias: Vd = 25V, Id = 480 mA,
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MECGaNX13
MECGaNX13
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Abstract: No abstract text available
Text: MECKULNAT Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 12 – 15 GHz full performance Frequency Range Small Signal Gain > 22 dB Noise Figure: < 1.75 dB P1dB > 21 dBm, Psat > 27 dBm Output TOI > 29 dBm
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Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DAT TDA7073A; TDA7073AT Dual BTL power driver Product specification Supersedes data of 1994 July 1999 Aug 30 NXP Semiconductors Product specification Dual BTL power driver TDA7073A; TDA7073AT FEATURES GENERAL DESCRIPTION • No external components
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TDA7073A;
TDA7073AT
TDA7073A/AT
545002/03/pp15
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TDA7073A
Abstract: TDA7073AT
Text: INTEGRATED CIRCUITS DATA SHEET TDA7073A; TDA7073AT Dual BTL power driver Product specification Supersedes data of 1994 July File under Integrated Circuits, IC01 1999 Aug 30 Philips Semiconductors Product specification Dual BTL power driver TDA7073A; TDA7073AT
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TDA7073A;
TDA7073AT
TDA7073A/AT
545002/03/pp16
TDA7073A
TDA7073AT
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Untitled
Abstract: No abstract text available
Text: MECWideX X-Ku-Band 0.5 Watt Wideband Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.0 – 14.0 GHz full performance Frequency Range Small Signal Gain > 18 dB Input Return Loss > 10 dB P1dB > 27 dBm Psat > 29 dBm PAE > 35 %
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190mA,
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0185220000
Abstract: 0179900000 0180700000
Text: Cable Lug 32/35 mm DIN-Rail Terminals SAKG 70 II G SAKG 40 I SAKG 40 II SAKG 40 II G 0150420000 0286820000 0170520000 0637820000 0185220000 0637720000 40/90/55.5 1.57/3.54/2.19 46/90/55 (1.81/3.54/2.17) – 40/90/55.5 (1.57/3.54/2.19) 46/90/55 (1.81/3.54/2.17)
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32/AH
0185220000
0179900000
0180700000
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TDA7073A
Abstract: TDA7073AT tda7073
Text: INTEGRATED CIRCUITS DATA SHEET TDA7073A; TDA7073AT Dual BTL power driver Product specification Supersedes data of 1994 July 1999 Aug 30 NXP Semiconductors Product specification Dual BTL power driver TDA7073A; TDA7073AT FEATURES GENERAL DESCRIPTION • No external components
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TDA7073A;
TDA7073AT
TDA7073A/AT
545002/03/pp15
TDA7073A
TDA7073AT
tda7073
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ADP3209
Abstract: IR7832 IMVP-6 IRF7821 IRF7832 M400 MBR0530 MBR130 10100ST
Text: 5-Bit, Programmable, Single-Phase, Synchronous Buck Controller ADP3209 FEATURES GENERAL DESCRIPTION Single-chip solution Fully compatible with the Intel GMCH chipset voltage regulator specifications Integrated MOSFET drivers ±8 mV worst-case differentially sensed core voltage error
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ADP3209
ADP3209
IR7832
IMVP-6
IRF7821
IRF7832
M400
MBR0530
MBR130
10100ST
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Untitled
Abstract: No abstract text available
Text: MEC25XDRA X-Band 0.5 Watt Power Amplifier Main Features • 0.25µm GaAs pHEMT Technology • 8.9– 11.0 GHz full performance Frequency Range Small Signal Gain > 21 dB Input Output RL > 12 dB P1dB > 27 dBm Bias: Vd = 6V, Id = 190mA, Vg = -0.5 V Typ.
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MEC25XDRA
190mA,
MEC25XDRA
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T2D 4N DIODE
Abstract: resistor HMR 5W diode code GW 17
Text: SAK-Series SAK-Series Appendix SAK-Series TS 35 A SAK-Series TS 32 B SAK-Series combination foot TS 35 + TS 32 C SAK-Series for special applications D AKZ-Series TS 15 E Multi-pole terminal strips F KLBÜ shielded connection G Busbars / Terminal rails H Accessories
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qm431
Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
Text: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N
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B/12/1145/96
qm431
E60693
terminals crimped DIN 46249
KEMA keur t 85
e 156176
KLIPPON
16K3
131706
diode catalogue
160455
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Untitled
Abstract: No abstract text available
Text: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.
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MECGaNC30
MECGaNC30
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Abstract: No abstract text available
Text: MECKULNA2 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin 0.25 µm GaN HEMT Technology 13 – 16 GHz full performance Frequency Range Small Signal Gain > 24.5 dB Noise Figure: < 2.5 dB P1dB > 21.5 dBm, Psat > 29.5 dBm Output TOI > 30 dBm
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Abstract: No abstract text available
Text: MECGaNX27 8.5 to 10.2 GHz GaN HEMT Power Amplifier Main Features • 0.25µm GaN HEMT Technology • 8.5 – 10.2 GHz full performances Frequency Range 27W Output Power @ Pin 27 dBm 36% PAE @ Pin 27 dBm 24 dB Small Signal Gain Bias: Vd = 30V, Id = 1A, Vg = -2.85V
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MECGaNX27
MECGaNX27
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Abstract: No abstract text available
Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency
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Abstract: No abstract text available
Text: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 10.8 GHz full performances Frequency Range Saturated Output Power > 11W PAE = 32% - 43% Small Signal Gain > 21 dB VG VD Bias: Vd = 8.5V, Id = 2.6A, Vg = -0.43V Typ.
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MECX10W-2
MECX10W-2
22dBm
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siba 90 058 05 500A
Abstract: LINDNER fuses SAKC10 SIBA FUSE FF varistor 05 k 575 0183360000 indicator fuse terminal SAKS1 SAK4 SL TERMINAL 100 0667520000 SAKR-35
Text: Modular feed-through terminals 2.5 mm2 SAKD 2.5/35 2.5 mm2 SAK 2.5 TS 35 / PA TS 35 / PA A When using ATEX certified components in hazardous area applications the installation instructions and the rated data for accessories in the technical appendix must be considered.
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TS35x7
H05V/H07V)
siba 90 058 05 500A
LINDNER fuses
SAKC10
SIBA FUSE FF
varistor 05 k 575
0183360000
indicator fuse terminal SAKS1
SAK4 SL TERMINAL 100
0667520000
SAKR-35
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DSP group
Abstract: echo sound processors telephone speech processor D6375A D6375A-11 95051
Text: D6375A Voice/Telephony IC wjth TRUESPEECH Compression M IC SPEAKER 1 Sp e ak er 1 1 Ph o n e C ODEC 1 O p tio n a l — Éilllil» 06375A « S Ö TEL I ,1 1 V O IC E PROM PT ROM (O p tion a l) S P p * o e « $ s o f HOST C ontroller i l l i i y i l l
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6375A
D6375A
DSP group
echo sound processors
telephone speech processor
D6375A-11
95051
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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silec
Abstract: JANCO transistor SMD DK qa silec rm Carter Transistor Corporation 885011 wien CM02-D 271924
Text: SALES OFFICES PSD SALES OFFICES Southeast Regional Sales Office General Instrument Corporation 6855 Jimmy Carter Blvd. Norcross, GA 30071 Tel: 404 446-1265 Fax: (404) 446-1286 Central Regional Sales Office General Instrument Corporation 85 W. Algonquin Rd. Suite 300
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131st
silec
JANCO
transistor SMD DK qa
silec rm
Carter Transistor Corporation
885011
wien
CM02-D
271924
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