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    05MAY2011 Search Results

    05MAY2011 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2006 2 3 1 2006 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - 69.1+0.6 P C 13.3 D DESCRIPTION LTR C1 DWN APVD SERIES GEOMETRY 23MAY2007 SKA TG UPDATED TOLERANCE LENGHT 61.1 05MAY2011 AV GT ECR-14-001570


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    27JAN2014 05MAY2011 ECR-14-001570 23MAY2007 A/42V A/125V 13APR2006 PDF

    Contextual Info: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kbyte Flash memory Datasheet - production data Features • Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory


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    STM32W108C8 64-Kbyte 32-bit AES128 DocID018587 PDF

    Contextual Info: TH I S DRAWING IS UNPUBLISHED. C O P Y R I G HT 2 0 0 6 RELEASED BY TYCO 69.r ELECTRONICS FOR COR P O R AT I O N . A L L PUBLICATION R|CHTS 2006 LOC RESERVED. D I ST R E V I S I ON S Al LTR 0.6 C1 [Ml DESCRIPTION DWN DATE APVD SER IES GEOMETRY 23MAY2007 SKA


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    23MAY2007 05MAY2011 A/42V 13APR2006 PDF

    to3fp

    Abstract: STW60N65
    Contextual Info: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A 1 Worldwide best RDS(on) * area amongst the silicon based devices


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    STW60N65M5 STFW60N65M5 O-247, STFW60N65M5 STW60N65M5 O-247 to3fp STW60N65 PDF

    Contextual Info: WT-106CP12 A Zener Diode Chips for ESD Protection 1. Feature and Application: 1-1 This specification is suitable for P/N zener single-direction structure chips use. 1-2 Paralleled the LED. 1-3 Unity pad metal (one wire bonding applied only). 1-4 One-way Zener diode protection.


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    WT-106CP12 05-May-2011 PDF

    Contextual Info: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C


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    HSP061-8M16 QFN-16L PDF

    Contextual Info: WTG3043 Surface Mount N-Channel Power MOSFET P b Lead Pb -Free 3 1 1. Gate 2. Source 3. Drain 2 Features: * * * * * Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment


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    WTG3043 OT-723 05-May-2011 OT-723 PDF

    Contextual Info: HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: • HDMI 1.3 and 1.4 • Digital Video Interface


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    HSP061-8M16 HSP061-8M16 QFN-16L DocID18055 PDF

    Contextual Info: 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By - REVISIO N S D IST AP LTR B1 DESCRIPTION DWN DATE REVISED DESIGN ECO-12-009649 23MAY2012 APVD NCL GOJ D D C C OS ITENS 1 e 2 DEVEM SER FORNECIDOS DESMONTADOS ITENS 1 AND 2 MUST BE SUPPLIED NOT ASSEMBLED


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    ECO-12-009649 23MAY2012 PDF

    Contextual Info: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C


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    HSP061-8M16 QFN-16L HSP061-8M16 PDF

    Contextual Info: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A Worldwide best RDS(on) * area amongst the silicon based devices


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    STW60N65M5 STFW60N65M5 O-247, O-247 PDF

    SCX12

    Abstract: preseth PM0056 TI410
    Contextual Info: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kbyte Flash memory Datasheet − production data Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower


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    STM32W108C8 64-Kbyte 32-bit AES128 SCX12 preseth PM0056 TI410 PDF

    Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC - ALL RIGHTS RESERVED. B1 OR B2 A1 OR A2 D 12.63 23.97 9.15 4.20 2.40 11.25 C 2.50 1 REVISIONS DIST - P LTR DESCRIPTION A3 REV PER ECR-12-013085 24JULY2012 LW AC


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    24JULY2012 ECR-12-013085 ECR-13-017562 14NOV2013 UL94V-0 60MIN. 05MAY2011 PDF

    STM32W

    Abstract: STM32W108 RW-67 SVC 471 20
    Contextual Info: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kybte Flash memory Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory


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    STM32W108C8 64-Kybte 32-bit 64-Kbyte AES128 STM32W STM32W108 RW-67 SVC 471 20 PDF

    Contextual Info: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kybte Flash memory Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory


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    STM32W108C8 64-Kybte 32-bit 64-Kbyte AES128 PDF

    top marking 293

    Contextual Info: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kybte Flash memory Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory


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    STM32W108C8 64-Kybte 32-bit 64-Kbyte AES128 top marking 293 PDF