4n62k
Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Text: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3
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STF4N62K3,
STFI4N62K3,
STI4N62K3,
STP4N62K3,
STU4N62K3
O-220FP,
O-220
STF4N62K3
STFI4N62K3
STI4N62K3
4n62k
4N62
i-pak Package zener diode
4N62K3
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LFXX
Abstract: No abstract text available
Text: LFXX Very low drop voltage regulator with inhibit function Datasheet - production data Description TO-220 TO-220FP PPAK DPAK Features • Very low-dropout voltage 0.45 V • Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) • Output current up to 500 mA
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O-220
O-220FP
O-220,
O-220FP,
DocID2574
LFXX
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LF50CDT-TRY
Abstract: transistor lf33cv AEC-Q100 LF15AB LF18AB LF18C LF25AB LF25C LF33AB LF33C
Text: LFxxAB LFxxC Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown
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c16tj
Abstract: SO20 VNQ860-E VNQ860SP-E
Text: VNQ860-E VNQ860SP-E Quad channel high side driver Features Type RDS on (1) Iout VCC VNQ860-E VNQ860SP-E 270 mΩ 0.25 A 36 V 1. Per each channel SO 20 • CMOS compatible I/Os ■ Undervoltage and overvoltage shutdown ■ Shorted load protection ■ Thermal shutdown
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VNQ860-E
VNQ860SP-E
PowerSO-10TM
VNQ860-E,
VNQ860SP-E
c16tj
SO20
VNQ860-E
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Untitled
Abstract: No abstract text available
Text: STG3692 Low voltage high bandwidth quad SPDT switch Features • Ultra low power dissipation: – ICC = 0.2 µA max. at TA = 85 °C ■ Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V ■
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STG3692
JESD22
000-V
A114-A)
QFN16L
STG3692
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4N62K3
Abstract: STD4N62K3
Text: STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3 Power MOSFET DPAK, IPAK Preliminary data Features Type STD4N62K3 STU4N62K3 VDSS RDS on max ID Pw 620 V < 1.95 Ω 3.8 A 70 W 3 3 2 1 • 100% avalanche tested ■ Extremely high dv/dt capability
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STD4N62K3
STU4N62K3
4N62K3
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4n62k
Abstract: No abstract text available
Text: STF4N62K3, STI4N62K3 STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET TO-220FP, IPAK, TO-220, I²PAK Features Order codes VDSS RDS on max ID Pw 3.8 A 25 W 70 W 70 W 70 W 3 STF4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 620 V <2Ω •
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STF4N62K3,
STI4N62K3
STP4N62K3,
STU4N62K3
O-220FP,
O-220,
STF4N62K3
STP4N62K3
4n62k
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Untitled
Abstract: No abstract text available
Text: LFxxAB LFxxC Very low drop voltage regulators with inhibit Datasheet − production data Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown
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LF33CV
Abstract: transistor lf33cv AEC-Q100 LF15AB LF18AB LF18C LF25AB LF25C LF33AB LF33C
Text: LFxxAB LFxxC Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown
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LF33ABV-DG
Abstract: lf33cv
Text: LFxxAB LFxxC Very low drop voltage regulators with inhibit Datasheet − production data Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown
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O-220
O-220FP
LF33ABV-DG
lf33cv
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Untitled
Abstract: No abstract text available
Text: STG3692 Low voltage high bandwidth quad SPDT switch Features • Ultra low power dissipation: – ICC = 0.2 µA max. at TA = 85 °C ■ Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V
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STG3692
JESD22
000-V
A114-A)
STG3692
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JESD22
Abstract: QFN16L STG3692 STG3692QTR
Text: STG3692 Low voltage high bandwidth quad SPDT switch Features • Ultra low power dissipation: – ICC = 0.2 µA max. at TA = 85 °C ■ Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V ■
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STG3692
JESD22
000-V
A114-A)
STG3692
JESD22
QFN16L
STG3692QTR
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4n62k
Abstract: 4N62K3 4N62 STF4N62K3
Text: STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3 Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features Type VDSS STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3 620 V RDS on max < 1.95 Ω ID Pw 3.8 A 70 W 25 W
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STB4N62K3,
STF4N62K3
STI4N62K3,
STP4N62K3
O-220FP,
O-220
STB4N62K3
STI4N62K3
4n62k
4N62K3
4N62
STF4N62K3
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Untitled
Abstract: No abstract text available
Text: VNQ860-E, VNQ860SP-E Quad channel high-side driver Datasheet - production data • Shorted load protection • Thermal shutdown • Very low standby current • Protection against loss of ground PowerSO-10TM SO 20 Features Type RDS on (1) Iout VCC VNQ860-E
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VNQ860-E,
VNQ860SP-E
PowerSO-10TM
VNQ860-E
VNQ860SP-E
DocID10964
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st 70 2005 11
Abstract: SO20 VNQ860-E VNQ860SP-E
Text: VNQ860-E VNQ860SP-E Quad channel high side driver Features Type RDS on (1) Iout VCC VNQ860-E VNQ860SP-E 270 mΩ 0.25 A 36 V 1. Per each channel SO 20 • CMOS compatible I/Os ■ Undervoltage and overvoltage shutdown ■ Shorted load protection ■ Thermal shutdown
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VNQ860-E
VNQ860SP-E
PowerSO-10TM
VNQ860-E,
VNQ860SP-E
st 70 2005 11
SO20
VNQ860-E
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Untitled
Abstract: No abstract text available
Text: STF4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAK, TO-220, I²PAK packages Datasheet — production data Features TAB Order codes STF4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 VDSS RDS on max
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STF4N62K3,
STI4N62K3,
STP4N62K3,
STU4N62K3
O-220FP,
O-220,
STF4N62K3
STI4N62K3
STP4N62K3
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STGW35HF60WD
Abstract: STGW35NC60WD AN3161
Text: AN3161 Application note Using the STGW35HF60WD advanced PT IGBT in parallel Introduction When two or more IGBTs are connected in parallel to improve the total efficiency in high output power systems, special care is required to ensure that current sharing between the
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AN3161
STGW35HF60WD
STGW35NC60WD
AN3161
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS C OP Y R I G H T UNPUBLI S H E D . RELEASED BY 20 TYCO ELECTRONICS CORPORATION F OR ALL 20 P U B L I C A T I ON R IGHTS LOC RESERVED. REV I SI ONS D I ST FT DESCRIPTION C3 A -MATI NG R E V I S E D PER ECO-1 0 - 0 0 9 3 7 9 10.5 3-284506-0
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05MAY2010
284506-I
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Untitled
Abstract: No abstract text available
Text: TH IS IT L OG A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C HANG E AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U LD BE C ON T A C T E D FOR THE L A T E S T R E V I S I O N .
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05MAY2010
05NAY2010
05NAY2010
IMAR2000
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Untitled
Abstract: No abstract text available
Text: TH IS IT L OG A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C HANG E AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U LD BE C ON T A C T E D FOR THE L A T E S T R E V I S I O N .
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05MAY2010
05NAY2010
05NAY2010
IMAR2000
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