05MAR99 Search Results

Contextual Info: ^ EMIC U2891B-B S e m i c o n d u c t o r s 2.5-GHz Quadrature Up-Converter Description The U2891B-B is a silicon monolithic integrated circuit, manufactored using TEMIC Semiconductors’ advanced UHF process. This integrated circuit consists of a 500-MHz I/Q

Contextual Info: 4 DRAWING THIS MADE IN THIRD DRAWING ANGLE IS UNPUBLISHED COPYRIGHT 3 PROJECTION 19 RELEASED BY ANP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL 2 <3> PROD 19 RIGHTS 4087 RESERVED. CODE LOC DF DI ST 50 REV I 5 IONS P F ZONE LTR A D y y DESCRIPTION CT

Contextual Info: TLHE4200 Vishay Telefunken High Intensity LED in ø 3 mm Clear Package Color Yellow Type TLHE4200 Description Technology AlInGaP on GaAs Angle of Half Intensity ±ö 22° 94 8488 This device has been designed to meet the increasing demand for AlInGaP technology.

Contextual Info: 7 DRAWING MA D E IN DIMENSIONS THIRD IN ANGLE BRACKETS COPYRIGHT 6 5 PROJECTION ARE IN 19 I 4CWEÍEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL 4 <3> 3 2 RIGHTS DI ST L OC 19 52 CM RESERVED. REV I 5 I0N5 Z O NE LTR D E S C R I F T I ON DATE

TSDF52424

Abstract: AGC Amplifiers smd RF low noise sot-363 9296
Contextual Info: TSDF52424 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: TSDF52424 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ .19 LOC AA RIGHrs RESERVED. DIST REVISIONS 28 DESCRIPTION LTF □ATE RLSD; NPR C 9 9 - 3 0 04MAR99 mm APVD cw BW D D A M A TE R IA L: INSERT - ABS MOLDING COMPOUND, SEE TABLE

MIL-T-10727

Contextual Info: 7 DRAWI NG MADE THIS IN THIRD DRAWI NG ANGL E 15 UNPUBLI 5HED COPYRIGHT 6 5 PROJECTION 19 RELEASED BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL <3> 4 3 2 RIGHTS DI ST LOC 19 REV I 5 I 0 N 5 00 GP RESERVED. LTR ZONE D E S C R I R T I ON

TLHE4200

Contextual Info: TLHE4200 Vishay Telefunken High Intensity LED in ø 3 mm Tinted Non–Diffused Package Color Yellow Type TLHE4200 Description Technology AlInGaP on GaAs Angle of Half Intensity ±ö 22° 94 8488 This device has been designed to meet the increasing demand for AlInGaP technology.

Contextual Info: Tem ic U2891B-B S e m i c o n d u c t o r s 2.5-GHz Quadrature Up-Converter Description The U2891B-B is a silicon monolithic integrated circuit, manufactored using TEMIC Semiconductors’ advanced UHF process. This integrated circuit consists of a 500-MHz I/Q

smd transistor g1

Abstract: TSDF52424 transistor smd marking wd2 85069
Contextual Info: TSDF52424 Vishay Telefunken Dual - MOSMIC– two AGC Amplifiers for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

60598-1

Contextual Info: 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED BY 19 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES ER V ED . D IS T REVISIONS 52 CM AH DWN APVD REV PER EC OG1B-0030-99 05-MAR-99 JH R5 ON I N S I D E NICKEL 0 . 0 0 0 7 6 MI N S E L E C T I V E GOLD P L A T I N G