Untitled
Abstract: No abstract text available
Text: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4401DDY
2002/95/EC
Si4401DDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TP0610K-T1-E
Abstract: TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TP0610K-T1-E
TP0610K-T1-E3
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IRF510S
Abstract: irf510 IRF510S MOSFET
Text: IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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IRF510S,
SiHF510S
O-263)
2002/95/EC
11-Mar-11
IRF510S
irf510
IRF510S MOSFET
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IRF530S
Abstract: SiHF530S SiHF530S-E3 910-20-11
Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
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IRF530S,
SiHF530S
O-263)
2002/95/EC
11-Mar-11
IRF530S
SiHF530S-E3
910-20-11
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SUP60N06-12P
Abstract: SUP60N06-12P-E3 SUP60N06-12P-GE3
Text: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SUP60N06-12P
2002/95/EC
O-220AB
SUP60N06-12P-E3
SUP60N06-12P-GE3
11-Mar-11
SUP60N06-12P
SUP60N06-12P-E3
SUP60N06-12P-GE3
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VS-80APS08-M3
Abstract: No abstract text available
Text: VS-80APS.PbF Series, VS-80APS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES • Very low forward voltage drop Base cathode 4, 2 TO-247AC 1 Anode • 150 °C max. operating junction temperature • Designed and
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VS-80APS.
O-247AC
JEDEC-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
VS-80APS08-M3
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Untitled
Abstract: No abstract text available
Text: VS-25TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES Anode 2 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC-JESD47 according • Material categorization: For definitions of compliance please see
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VS-25TTS.
JEDEC-JESD47
J-STD-020,
O-263AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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vskt320
Abstract: No abstract text available
Text: VSKT320PbF Series www.vishay.com Vishay Semiconductors Thyristor/Thyristor MAGN-A-PAK Power Modules , 320 A FEATURES • High voltage • Electrically isolated base plate • 3600 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly
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VSKT320PbF
E78996
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vskt320
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sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-1010
sharp laser diodes
TSOP855
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Amphenol SMA
Abstract: No abstract text available
Text: REVISIONS 135101-07-XX.XX NOTES: DRAWING NO. 1. 2. PERFORM CONTINUITY & HI-POT TESTING. REV THIRD ANGLE PROJ. PACKAGE INDIVIDUALLY IN HEAT SEALED POLY BAG. DESCRIPTION DATE ECO APPR A RELEASE TO MFG. 04-May-10 - CL B NOTE ADDED 05-Jul-10 2070 KR TAG IN BAG WITH "AMPHENOL CONNEX,135101-07-XX.XX AND DATE CODE".
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135101-07-XX
04-May-10
05-Jul-10
04-May-10
RG142
/135101-07-XX
Amphenol SMA
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Untitled
Abstract: No abstract text available
Text: VS-8STH06FP Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 1 • Halogen-free according to IEC 61249-2-21 definition
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VS-8STH06FP
O-220
VS-8STH06FP
18-Jul-08
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marking code V10 214AA
Abstract: No abstract text available
Text: VS-MBRS190TRPbF, VS-MBRS1100TRPbF Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode SMB • Guard ring for enhanced ruggedness and long term reliability
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VS-MBRS190TRPbF,
VS-MBRS1100TRPbF
J-STD-020,
2002/95/EC
DO-214AA
VS-MBRS1100TRPbF
18-Jul-08
marking code V10 214AA
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED LOR PUBLICATION ALL RIGHTS RESERVED. By - 2 3 - ,- R E V IS IO N S P LTR T DESCRIPTION DATE REVISED PER E C O -12 -0 1 231 6 DWN APVD KH MZ 05JUL12 D D -z R o + 0 - 1 ^ 3 -6 8 - 0 . 2 5 1 4 5 + .0 0 5 -.01 0
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Abstract: No abstract text available
Text: 4 TH IS DRAWING IS COPYRIGHT 2 3 U N P U B L IS H E D . RELEAS ED FOR PU B LIC ATIO N - ,- R E V IS IO N S ALL RIGHTS RESERVED. By - P LTR w D E S C R IP TIO N REVISED PER E C O - 1 2- 01 231 6 DATE DWN APVD 05JUL12 KH MZ D D 3.56 + 0.1 3 .140" 26.75 + 0.51
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664006
Abstract: No abstract text available
Text: T H IS D R AW IN G IS U N P U B L IS H E D . R E L E A S E D FO R P U B LIC A T IO N LOC CO PYRIG H T R EVISIO N S D IS T A LL RIGHTS R ESER VED . D E S C R IP T IO N REVISED PER ECO — 1 2 —01 231 KH MZ 05JUL12 D -Z 3 .0 5 + 0.25 - R + 0 - 13 3 -6 8 - 0 . 2 5
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664006
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Untitled
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Text: T H IS D R AW IN G IS U N P U B L IS H E D . R E L E A S E D FO R P U B LIC A T IO N LOC R EVISIO N S D IS T A LL RIGHTS R ESER VED . CO PYRIG H T D E S C R IP T IO N REVISED PER E C O - 1 2 - 0 1 231 KH MZ 05JUL12 D + 0.25 TYP -0.1 3 + .01 0 -.0 0 5 ON A
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Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL 2 P U B L IC A T IO N R IG H TS LOC D IS T REVISIO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N RE VISED PER ECO —1 2 —01 231 KH 05JUL12 MZ D D 3.68 3 .0 5 ig '^ . 145 TYP [120Î;8i§]
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Text: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC D IS T REVISIO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N R EVISED PER E C O - 12 - 0 1 231 KH 05JUL12 MZ D + 0 .2 5 - 0 .1 3 TYP + .01 Ö - .0 0 5
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Text: 4 TH IS DRAWING IS 2 3 U N P U B L IS H E D . RELEAS ED FOR PUBLIC ATIO N R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT By P LTR K D E S C R IP TIO N REVISED PER E C O - 1 2- 01 231 6 DATE DWN APVD 05JUL12 KH MZ D D 3.05tgA TYP [1207;§i§] CTIO N A c C 3.30MB TYP
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Untitled
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Text: T H IS D R AW IN G IS U N P U B L IS H E D . R E L E A S E D FO R P U B LIC A T IO N LOC ALL RIGHTS R ESER VED . CO PYRIG H T R EVISIO N S D IS T D E S C R IP T IO N w REVISED PER E C O - 1 2 - 0 1 231 KH MZ 05JUL12 D 3.56 + 0.1 3 .1 40" 26.75 + 0.51 0.38
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Untitled
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Text: D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL P U B L IC A T IO N R IG H TS LOC D IS T REVISIO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N R EVISED PER E C O - 12 - 0 1 231 KH 05JUL12 MZ D + 0.1 3 - 0 .2 5 2.2 1 .0 8 7 + .0 0 5 ’ -.01 0
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Text: T H IS D R AW IN G IS U N P U B L IS H E D . R E L E A S E D FO R P U B LIC A T IO N LOC R EVISIO N S D IS T A LL RIGHTS R ESER VED . CO PYRIG H T D E S C R IP T IO N DATE REVISED PER ECO — 1 2 —01 231 DWN KH MZ 05JUL12 -2.03 + .250 [.080 + .010 ] D
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Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . 3 2 R E L E A S E D FO R P U B LIC A T IO N LOC CO PYRIG H T REVISION S D IS T ALL RIGHTS R ESER VED . D E S C R IP T IO N REVISED PER ECO — 1 2 —01 231 KH MZ 05JUL12 D D 3.68 -1 . 5 2 DIA [.0 6 0 ] 0.25
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Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FOR A LL C O P Y R IG H T By 2 3 P U B L IC A T IO N R IG H TS - -, R E V IS IO N S RESERVED. - D E S C R IP T IO N R EVISED RER E C O - 12 - 0 1 231 6 KH 05JUL1 2 1Z •SPRING + 0.025 -0.051 1 —
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