05FEB07 Search Results

Tyco amp connectors 1123343-1

Abstract: Tyco Electronics 1123343-1 X13-18 X-1318384-X 147389 B1115 B1122
Contextual Info: Instruction Sheet 411-5928-1 05FEB07 取扱説明書 Rev. G4 025 SERIES I/O CONNECTORS （H-Type ,V-Type 2Row） 1. 製品名称及び 製品名称及び型番 1.1 ハウジング AMP 型番★ 名称 1376350 1376352 1318772 1473898 1318774 1376675 1565287

Tyco amp connectors 1123343-1

Abstract: Tyco Electronics 1123343-1 B1115 B1122 screw m3x6
Contextual Info: Instruction Sheet 411-5928 05FEB07 Rev.G4 025 SERIES I/O CONNECTORS （H-Type ,V-Type 2Row） 1. Part Name and Part Number 1.1 Housing AMP Part Number★ Part Name 1376350 1376352 025 SERIES 8 POSITION CAP ASSY H-TYPE（Male Connector） 025 SERIES 8 POSITION PLUG ASSY （Female Housing）

Si4922BDY

Abstract: SI4922BDY-T1-E3
Contextual Info: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested

231722

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C FLAMABILITY RATING: UL94-V0

Contextual Info: BC847S Dual General Purpose Transistor NPN Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT -363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Unit V V V mA Value

ARM LPC2148 application notes

Abstract: Philips LPC2148 reference manual LPC2xxx SPI master code example LPC2148 interfacing circuit with adc LPC2148 interfacing circuit with adc using pwm AN10513 application notes lpc2148 LPC2148 DC motor program ARM7 LPC2129 UART trigger interrupt lpc2148
Contextual Info: LPC2109/2119/2129 Single-chip 16/32-bit microcontrollers; 64/128/256 kB ISP/IAP flash with 10-bit ADC and CAN Rev. 06 — 10 December 2007 Product data sheet 1. General description The LPC2109/2119/2129 are based on a 16/32-bit ARM7TDMI-S CPU with real-time

Contextual Info: 14.0-30.0 GHz GaAs MMIC Buffer Amplifier B1009-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

SiP12506

Contextual Info: SiP12506 Vishay Siliconix 1-MHz Boost Converter with OVP for White LED Applications DESCRIPTION FEATURES The SiP12506 is a 1 MHz current-mode boost converter with a feedback voltage of 0.208 V which offers small size and high power conversion efficiency. Its input voltage range is

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested

B1009

Abstract: DM6030HK TS3332LD XB1004 XB1009-BD XU1002 B1009-BD
Contextual Info: 14.0-30.0 GHz GaAs MMIC Buffer Amplifier B1009-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C

DM6030HK

Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point