05APR00 Search Results

CHV2240

Abstract: murata vco microwave module
Contextual Info: CHV2240 Multifunction : K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n K-band VCO + Q-band frequency multiplier n External resonator for centre frequency control and phase noise optimisation n High quality oscillator when coupled to

Contextual Info: 7 T H IS DRAWING 15 UNPUBLISHED. JÊL BY AMP INCORPORATED. 3 2 , 19 RELEASED FOR PUBLICATION COPYRIGHT 19 4 5 6 DI ST LOC ALL RIGHTS RESERVED. REVISIONS BD DESCRIPTION T REV PER PER EC 0G40-0244-99 R E V P E R EC 0 U 1 D - 0 1 1 3 - 0 0 10 0 ± .001 5 C A

dielectric resonator

Abstract: murata vco microwave module CHV2240 cavity resonator
Contextual Info: CHV2240 RoHS COMPLIANT Multifunction : K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n K-band VCO + Q-band frequency multiplier n External resonator for centre frequency control and phase noise optimisation n High quality oscillator when coupled to a

SAS 251

Abstract: for 2090 ic chip
Contextual Info: CHA5010b RoHS COMPLIANT X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and

Contextual Info: 4 DRA WI N G THIS MADE IN THIRD DRAWI NG ANGLE IS UNPUBLISHED COPYRIGHT 19 2 3 PROJECTION RELEASED BY ANP FOR INCORPORATED. ALL INTERNATIONAL MOD 19 PUBLICATION RIGHTS 06 RESERVED. D I ST LOC AR 39 REV I 5 I ONS p F ZONE DESCR I P T I O N LTR D D REDRAWN

Contextual Info: CHA6013 L band High Power Amplifier GaAs Monolithic Microwave IC Description Vg The CHA6013 is single stage 1.2-1.4 GHz high power amplifier. The circuit is manufactured with a standard 0.7µm MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

NF 838 G

Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

dwa 108 a

Contextual Info: 7 THIS JÊL DRAWI NG COPYRI GHT 15 U N P U B L I S H E D . 19 RELEASED BY AMP I N C OR P O R A T E D . ALL FOR P U B L I C A T I O N RIGHTS , 6 4 5 3 2 19 DI ST LOC RESERVED. REVISIONS BD DESCRIPTION REVI SED PER EC 0 G 4 0 - 0 2 3 3 - 9 9 OBSOLETE - 7 AND REV

CHV2240

Contextual Info: CHV2240 Multifunction : K-band VCO and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n K-band VCO + Q-band frequency multiplier n External resonator for centre frequency control and phase noise optimisation n High quality oscillator when coupled to

SAS 251

Contextual Info: CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: 3 4 DRAWING THIS MADE DRAWI NG 2 IN IS THIRD ANGLE UNPUBDI5HED. COPYRIGHT 19 2 PROJECTION REDEASED BY ANP FOR PUBDICATION I NCORPORATED . ALL LOC , 19 INTERNATIONAL RIGHTS D I 5T AD RESERVED. 39 R E V I 5 I ON! ZONE DESCRIPTION LTR K REV PER 0 G 3 C - 0 1 0 5 - 0 0

HP07

Contextual Info: CHA7013 5-6GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7013 is a C-band monolithic two-stage power amplifier. Its design is based on a symmetrical arborescent topology with on-chip matching networks. Output power and gain for Pin = 20 dBm

Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

Contextual Info: 7 THIS JÊL DRAWI NG COPYRIGHT 15 U N P U B L I S H E D . 19 RELEASED BY AMP I N C OR P O R A T E D . ALL FOR P U B L I C A T I O N RIGHTS , 6 4 5 2 3 19 DI ST LOC RESERVED. REVISIONS BD DESCRIPTION R DV I5 DD 5 OBSOLETE T NYLON OR P O L Y E S T E R , FILLED,

8-12GHz

Abstract: SS 1603 NF 838 G
Contextual Info: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and