05OCT07 Search Results

EIA-364-32D

Abstract: EIA-364-09C EIA-364-13C EIA-364-23C EIA-364-28E EIA-364-20C EIA-364-70A JESD22-B102D "HDMI connector" EIA-364-17B
Contextual Info: Product Specification 108-57510 05OCT07 Rev B HDMI Connector 1. SCOPE 1.1. Contents This specification covers the performance, tests and quality requirements for the Tyco Electronics HDMI connector. 1.2. Qualification When tests are performed on the subject product line, procedures specified in Figure 1 shall be used. All

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP COLOR: BLACK SHIELDING: BRASS TIN PLATED CONTACT: PHOSPHOR BRONZE CONTACT TYPE: STAMPED LEVEL: 3 AS PER CECC 75 301-802 ENVIRONNEMENTAL OPERATING TEMPERATURE: -25 TO 85°C FLAMABILITY RAING: UL94-V0

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

N 4216

Abstract: AN609
Contextual Info: SUD50P04-34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

.110 faston tab

Abstract: 62514-1 POKE CTL1039-121 CTL1039-301-001
Contextual Info: 501-30 Qualification Test Report 20Oct08 Rev D MAG-MATE* Standard Terminals 1. INTRODUCTION 1.1. Purpose Testing was perform ed on MAG-MATE* standard term inals to determ ine their conform ance to the requirem ents of Product Specification 108-2012 Revision D.

MD-1111

Contextual Info: CAT25320 32-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25320 is a 32-Kb Serial CMOS EEPROM device internally organized as 4096x8 bits. This features a 32-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device

AN609

Contextual Info: SQ7415EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SiB911DK
Contextual Info: SiB911DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

1710-M

Abstract: AN609 SUM60N04-12LT
Contextual Info: SUM60N04-12LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUM60N04-05LT

Abstract: AN609
Contextual Info: SUM60N04-05LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

M38D29GFHP

Contextual Info: M38D2 05-Oct-07 Evaluation of Subsystem Clock Oscillation Circuit [M38D29GFHP-64P] LQFP 10x10 0.5mm pitch Measurement conditions :3.3V,5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=12.5pF

AN609

Abstract: SUM55P06-19L
Contextual Info: SUM55P06-19L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

8821

Abstract: AN609 Si8429DB
Contextual Info: Si8429DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

M38D29GFHP

Abstract: d6326
Contextual Info: M38D2 05-Oct-07 Evaluation of Subsystem Clock Oscillation Circuit [M38D29GFHP-64P] LQFP 10x10 0.5mm pitch Measurement conditions :3.3V,5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF

AN609

Contextual Info: Si7409ADN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

4490 mosfet

Abstract: AN609 SiA443DJ
Contextual Info: SiA443DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

309398

Abstract: transistor c 6073 AN609 SiA411DJ
Contextual Info: SiA411DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

3942

Abstract: AN609 Si7431DP
Contextual Info: Si7431DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

48360

Abstract: 8935 AN609
Contextual Info: Si7652DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

8205 A mosfet

Abstract: 8205 mosfet 8205 8205 A 8205 datasheet AN609
Contextual Info: Si7382DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

9303

Abstract: AN609 SUD40N02-08 132-337
Contextual Info: SUD40N02-08_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SQ7414EN
Contextual Info: SQ7414EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP COLOR: BLACK SHIELDING: BRASS NI PLATED CONTACT: COPPER ALLOY CONTACT TYPE: STAMPED LEVEL: 3 AS PER CECC 75 301-802 ENVIRONNEMENTAL OPERATING TEMPERATURE: -25 TO 85°C FLAMABILITY RAING: UL94-V0