EIA-364-32D
Abstract: EIA-364-09C EIA-364-13C EIA-364-23C EIA-364-28E EIA-364-20C EIA-364-70A JESD22-B102D "HDMI connector" EIA-364-17B
Text: Product Specification 108-57510 05OCT07 Rev B HDMI Connector 1. SCOPE 1.1. Contents This specification covers the performance, tests and quality requirements for the Tyco Electronics HDMI connector. 1.2. Qualification When tests are performed on the subject product line, procedures specified in Figure 1 shall be used. All
|
Original
|
05OCT07
EIA-364-32D
EIA-364-09C
EIA-364-13C
EIA-364-23C
EIA-364-28E
EIA-364-20C
EIA-364-70A
JESD22-B102D
"HDMI connector"
EIA-364-17B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP COLOR: BLACK SHIELDING: BRASS TIN PLATED CONTACT: PHOSPHOR BRONZE CONTACT TYPE: STAMPED LEVEL: 3 AS PER CECC 75 301-802 ENVIRONNEMENTAL OPERATING TEMPERATURE: -25 TO 85°C FLAMABILITY RAING: UL94-V0
|
Original
|
UL94-V0
500VAC,
300VAC
05-OCT-07
11-OCT-06
|
PDF
|
XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
|
PDF
|
N 4216
Abstract: AN609
Text: SUD50P04-34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SUD50P04-34
AN609
05-Oct-07
N 4216
|
PDF
|
TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
|
PDF
|
.110 faston tab
Abstract: 62514-1 POKE CTL1039-121 CTL1039-301-001
Text: 501-30 Qualification Test Report 20Oct08 Rev D MAG-MATE* Standard Terminals 1. INTRODUCTION 1.1. Purpose Testing was perform ed on MAG-MATE* standard term inals to determ ine their conform ance to the requirem ents of Product Specification 108-2012 Revision D.
|
Original
|
20Oct08
12Dec83
14Aug85.
CTL1039-301-001.
20Jun07
05Oct07.
CTL1039-121.
125/C.
118/C
.110 faston tab
62514-1
POKE
CTL1039-121
CTL1039-301-001
|
PDF
|
MD-1111
Abstract: No abstract text available
Text: CAT25320 32-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION 10 MHz SPI compatible The CAT25320 is a 32-Kb Serial CMOS EEPROM device internally organized as 4096x8 bits. This features a 32-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device
|
Original
|
CAT25320
32-Kb
32-byte
CAT25320
4096x8
MD-1111
|
PDF
|
AN609
Abstract: No abstract text available
Text: SQ7415EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SQ7415EN
AN609
05-Oct-07
|
PDF
|
AN609
Abstract: SiB911DK
Text: SiB911DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SiB911DK
AN609
05-Oct-07
|
PDF
|
1710-M
Abstract: AN609 SUM60N04-12LT
Text: SUM60N04-12LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SUM60N04-12LT
AN609
05-Oct-07
1710-M
|
PDF
|
SUM60N04-05LT
Abstract: AN609
Text: SUM60N04-05LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SUM60N04-05LT
AN609
05-Oct-07
|
PDF
|
M38D29GFHP
Abstract: No abstract text available
Text: M38D2 05-Oct-07 Evaluation of Subsystem Clock Oscillation Circuit [M38D29GFHP-64P] LQFP 10x10 0.5mm pitch Measurement conditions :3.3V,5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=12.5pF
|
Original
|
M38D2
05-Oct-07
M38D29GFHP-64P]
10x10)
768kHz
/-20x10-6
1x10-6W
M38D29GFHP
|
PDF
|
AN609
Abstract: SUM55P06-19L
Text: SUM55P06-19L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SUM55P06-19L
AN609
05-Oct-07
|
PDF
|
8821
Abstract: AN609 Si8429DB
Text: Si8429DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si8429DB
AN609
05-Oct-07
8821
|
PDF
|
|
|
M38D29GFHP
Abstract: d6326
Text: M38D2 05-Oct-07 Evaluation of Subsystem Clock Oscillation Circuit [M38D29GFHP-64P] LQFP 10x10 0.5mm pitch Measurement conditions :3.3V,5.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF
|
Original
|
M38D2
05-Oct-07
M38D29GFHP-64P]
10x10)
768kHz
/-20x10-6
1x10-6W
M38D29GFHP
d6326
|
PDF
|
AN609
Abstract: No abstract text available
Text: Si7409ADN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si7409ADN
AN609
05-Oct-07
|
PDF
|
4490 mosfet
Abstract: AN609 SiA443DJ
Text: SiA443DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SiA443DJ
AN609
05-Oct-07
4490 mosfet
|
PDF
|
309398
Abstract: transistor c 6073 AN609 SiA411DJ
Text: SiA411DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SiA411DJ
AN609
05-Oct-07
309398
transistor c 6073
|
PDF
|
3942
Abstract: AN609 Si7431DP
Text: Si7431DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si7431DP
AN609
05-Oct-07
3942
|
PDF
|
48360
Abstract: 8935 AN609
Text: Si7652DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si7652DP
AN609
05-Oct-07
48360
8935
|
PDF
|
8205 A mosfet
Abstract: 8205 mosfet 8205 8205 A 8205 datasheet AN609
Text: Si7382DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si7382DP
AN609
05-Oct-07
8205 A mosfet
8205 mosfet
8205
8205 A
8205 datasheet
|
PDF
|
9303
Abstract: AN609 SUD40N02-08 132-337
Text: SUD40N02-08_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SUD40N02-08
AN609
05-Oct-07
9303
132-337
|
PDF
|
AN609
Abstract: SQ7414EN
Text: SQ7414EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SQ7414EN
AN609
05-Oct-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP COLOR: BLACK SHIELDING: BRASS NI PLATED CONTACT: COPPER ALLOY CONTACT TYPE: STAMPED LEVEL: 3 AS PER CECC 75 301-802 ENVIRONNEMENTAL OPERATING TEMPERATURE: -25 TO 85°C FLAMABILITY RAING: UL94-V0
|
Original
|
UL94-V0
500VAC,
300VAC
07-MAY-17
05-OCT-07
11-OCT-06
|
PDF
|