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    Untitled

    Abstract: No abstract text available
    Text: RF-13 Rev 05MAY14 SMA–P–C–H–ST–CA1 SMA–J–C–H–ST–BH1 SMA–J–C–H–ST–PN1 SMA–J–C–H–ST–S10 SMA-CA SERIES 50Ω SMA COMPONENTS SPECIFICATIONS For complete specifications and assembly instructions see www.samtec.com?SMA-CA


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    PDF RF-13 05MAY14) -CA10

    Untitled

    Abstract: No abstract text available
    Text: Not for New Design 199 PEL-SI Vishay BCcomponents Aluminum Capacitors Power Economy Long Life Snap-In FEATURES • Polarized aluminum capacitors, non-solid electrolyte • Large types, very small dimensions, cylindrical aluminum case, insulated with a blue sleeve


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    PDF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


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    PDF Si5484DU Si5484DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


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    PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PATT www.vishay.com Vishay Dale Thin Film Precision Automotive High Temperature 155 °C at full rated power Thin Film Chip Resistor, AEC-Q200 Qualified FEATURES • Resistance range: 2.75  to 301 k • AEC-Q200 qualified, table 7F • AEC-Q200 qualified, ESD rated class 1C


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    PDF AEC-Q200 MIL-STD-202, MIL-PRF-55342 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    J-STD-002

    Abstract: ZGL41-100 ZGL41-110 ZGL41-200A DO-213AB VISHAY DO213AB VISHAY ZGL41
    Text: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor


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    PDF ZGL41-100 ZGL41-200A J-STD-020C, DO-213AB 2002/95/EC 2002/96/EC 18-Jul-08 J-STD-002 ZGL41-110 ZGL41-200A DO-213AB VISHAY DO213AB VISHAY ZGL41

    Untitled

    Abstract: No abstract text available
    Text: P10L Vishay Sfernice Long Life Potentiometer - 500 000 Cycles Miniature - Cermet - Fully Sealed FEATURES • 500 000 cycles  Cermet element  Low temperature coefficient ± 150 ppm/°C typical  Plastic housing and shaft  Compact (3/8" square)


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    PDF 2002/95/EC P10LXX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: P30L Vishay Sfernice Long Life Potentiometer - 2 Million Cycles Heavy Duty - Cermet Fully Sealed FEATURES • 2 million cycles  High power rating 3 W at 70 °C  Cermet element  Low temperature coefficient ± 150 ppm/°C typical  Custom designs on request


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    PDF 2002/95/EC P30LL P30LLL: 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: V i s hay I n t e rt e ch n o l o g y, I n c . I INNOVAT AND TEC O L OGY P10L N HN POTENTIOMETERS O 19 62-2012 Resistors - Long Life of 500 000 Cycles Long-Life 500 000 Cycles Panel Potentiometer Key Benefits • • • • • • Long life of 500 000 cycles


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    PDF 05-May-11 VMN-PT0121-1202

    Untitled

    Abstract: No abstract text available
    Text: TLVB4200 Vishay Semiconductors Backlighting Blue LED, Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVB4200 series was developed for backlighting. Due to its special shape the spatial distribution of the radiation is qualified for backlighting.


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    PDF TLVB4200 2002/95/EC 2002/96/EC TLVB4200 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TLHF4600, TLHF4601 Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package 19222 DESCRIPTION This device has been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. It is housed in a 3 mm diffused plastic package. The


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    PDF TLHF4600, TLHF4601 2002/95/EC 2002/96/EC 11-Mar-11

    SILICONIX MARKING si5999edu-t1-ge3

    Abstract: No abstract text available
    Text: Si5999EDU Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si5999EDU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SILICONIX MARKING si5999edu-t1-ge3

    Untitled

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1000 MHz 5.0 VDC 1000 MHz Tuning Voltage: Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +8.0 +10.0 +12.0 dBm 25 30 mA Supply Current:


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    PDF 10kHz 100kHz 10MHz CVCO55CX-1000-1000 05-May-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF SiR640ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V20DL45-M3, V20DL45HM3 www.vishay.com Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A FEATURES TMBS eSMP® Series TO-263AC SMPD • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm


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    PDF V20DL45-M3, V20DL45HM3 O-263AC J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si5459DU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a -8 e -7.5 RDS(on) (Ω) 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V -20 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested 8 • Material categorization:


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    PDF Si5459DU Si5459DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5415EDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0098 at VGS = - 4.5 V - 25 0.0114 at VGS = - 3.7 V - 25 0.0143 at VGS = - 2.5 V - 25 0.0250 at VGS = - 1.8 V -7 Qg (Typ.)


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    PDF Si5415EDU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: P10L Vishay Sfernice Long Life Potentiometer - 500 000 Cycles Miniature - Cermet - Fully Sealed FEATURES • 500 000 cycles  Cermet element  Low temperature coefficient ± 150 ppm/°C typical  Plastic housing and shaft  Compact (3/8" square)


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    PDF 2002/95/EC P10LXX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 123 SAL-A www.vishay.com Vishay BCcomponents Aluminum Capacitors Solid Axial FEATURES 123 SAL-A 128 SAL-RPM Radial higher CV/volume Fig. 1 QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size  Ø D x L in mm 6.7 x 15.3 to 12.9 x 32.0 Rated capacitance range


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    PDF 60384-4/EN130300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    ACS 0865

    Abstract: dale wvl
    Text: WVL Vishay Dale Inductors, Variable, Subminiature, Shielded, Radial Leaded FEATURES • • • • • • • ELECTRICAL SPECIFICATIONS Adjustable Inductance Range: Tunable range; ± 5 % for 0.10 H to 1 μH. ± 10 % for 1.2 μH to 1000 μH Dielectic Strength: 840 VRMS at sea level


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    PDF 2002/95/EC 11-Mar-11 ACS 0865 dale wvl

    TLHG440

    Abstract: TLHG4400 TLHG4401 TLHP4401
    Text: TLHG440., TLHO440., TLHP440., TLHR440., TLHY440. Vishay Semiconductors High Efficiency LED in Ø 3 mm Tinted Diffused Package FEATURES • Standard Ø 3 T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle


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    PDF TLHG440. TLHO440. TLHP440. TLHR440. TLHY440. 2002/95/EC 2002/96/EC 11-Mar-11 TLHG440 TLHG4400 TLHG4401 TLHP4401

    1437006-4

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S GP 0 0 LTR A DESCRIPTION DATE DWN HMR cv 05MAY1 0 REVISED PER ECO-10 - 0 0 9 2 9 6 APVD 1A MATERIAL: HOUSING AND COVER: GLASS-REINFORCED POLYESTER, UL 94-VO,


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    PDF ECO-10 05MAY1 94-VO, 050CT06 31MAR2000 1437006-4

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By 2 P U B U IC A T IO N R IG H TS REVISIO N S 50 RESERVED. - LTR D E S C R IP T IO N P3 REVISED PER DATE DWN A PVD 05MAY11 HMR KR ECR-11-009033 CONTINUOUS STRIP ON REEL.


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    PDF ECR-11-009033

    Untitled

    Abstract: No abstract text available
    Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL 2 P U B L IC A T IO N R IG H TS LOC D IS T R E V IS IO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N J R EVISED PER DWN ECR-11-002363 1 05MAY1 A PVD TT D D ;±iS NOTE 1 MA T E R I A L i G L A S S


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    PDF ECR-11-002363 05MAY1