05JUN09 Search Results

Contextual Info: 4 | | TH IS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED FOR PUBLICATION 1 AUG .2006. LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. R E V ISIO N S DIST DW LTR P DESCRIPTIO N A DIM.A DATE OWN 05JUN09 R E V IS E D E C R — 09—013083 APVD

SOT-23 marking 352 MOSFET

Abstract: WTC2305 MOSFET P-Channel sot-23 DSS SOT23
Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <70m Ω@V GS =10V *Rugged and Reliable *Simple Drive Requirement