054n40
Abstract: KMB054N40 semiconductor 054n40 kmb054n40da semiconductor KMB 054N40 marking DA DA DPAK kmb 054n40
Text: SEMICONDUCTOR KMB054N40DA 1 MARKING SPECIFICATION DPAK(1) PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. 2007. 4. 18 KMB 054N40 DA 709 1 3 Item Marking Description Device Name KMB054N40DA(1) KMB054N40DA(1) Revision - - Lot No. 709 Revision No : 0
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KMB054N40DA
054N40
054n40
KMB054N40
semiconductor 054n40
semiconductor KMB 054N40
marking DA
DA DPAK
kmb 054n40
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kmb054n40da
Abstract: KMB054N40 054n40 semiconductor 054n40 semiconductor KMB 054N40 054n40 da
Text: SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40DA
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KMB054N40
054n40
semiconductor 054n40
semiconductor KMB 054N40
054n40 da
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054N40
Abstract: KMB054N40 semiconductor 054n40 KMB054N40D kmb054n40dB
Text: SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40DB
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semiconductor 054n40
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KMB054N40
Abstract: 054N40 semiconductor 054n40 KMB054N40DC KMB054N40D 40V 14A DPAK *054n40 kmb-054n40
Text: SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40DC
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054N40
semiconductor 054n40
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40V 14A DPAK
*054n40
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KMB054N40
Abstract: 054n40 semiconductor 054n40 KMB054N40IA dc101
Text: SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40IA
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