04MAY2011 Search Results

SSD40N10-30D

Abstract: MosFET
Contextual Info: SSD40N10-30D 26A, 100V, RDS ON 36mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package

Contextual Info: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: STPS10L60C Power Schottky rectifier Features A1 • Low forward voltage drop ■ Negligible switching losses ■ Insulated package: – Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified K A2 A2 Description K A1 Dual center tap Schottky rectifier suited for switch

Contextual Info: WT-108DP100 Zener Diode Chips for ESD Protection 1. Feature: 1-1 This specification applies to P/N silicon diode chips. 2. Structure: 2-1 planar type. 2-2 Electrodes : P Anode side : Aluminum alloy. N (Cathode) side : Gold Layer. 3. Size: 3-1. Chip Size : 7.9 mils x 7.9 mils (200 µm x 200 µm ).

Contextual Info: Software for Stress Analysis Testing Micro-Measurements StrainSmart Data Acquisition System StrainSmart is a ready-to-use, Windows®-based software system for acquiring, reducing, presenting, and storing measurement data from strain gages, strain-gage-based

Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC - ALL RIGHTS RESERVED. BY - -A- REVISIONS DIST - P LTR A A1 -A- DESCRIPTION DATE DWN APVD REVISED PER ECR-12-002666 08AUG2012 RS MM REVISED PER ECR-14-000133 22JAN2014 YR OL

114-18679-3

Abstract: pa66-gf30 PA6-GF15 PA46-GF15 PA66GF30 114-18679 PA66-GF15 PA6GF15 114186793 PA66GF15
Contextual Info: T H I S DRAWING IS U N P U B L I S H E D . VERTRAULI CHE UNVE ROE FFE NTLI CH TE ZEICHNUNG R E L E A S E D FOR P U B L IC A T IO N FREI FUER V E R O E F F E N T L I C H U N G ALL RIGHTS RESERVED. Al I F R F C H T F V D R R F H A I T F N . C O P Y R I G H T 2004

J-STD-020B

Abstract: PD54008-E PD54008S-E PD54008STR-E PD54008TR-E smd code electrolitic capacitor
Contextual Info: PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package PowerSO-10RF

AN1294

Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
Contextual Info: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection

Contextual Info: STBP110 Overvoltage protection device Preliminary data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - Low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 1.2 A ■

STPS10L60C

Abstract: STPS10L60CFP
Contextual Info: STPS10L60C Power Schottky rectifier Features A1 • Low forward voltage drop ■ Negligible switching losses ■ Insulated package: – Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified K A2 A2 Description K A1 Dual center tap Schottky rectifier suited for switch

MIL-STD-275

Contextual Info: Product Specification 108-37006 Rev. D 04-May-2011 AMP Novo Shunt Connector 1. SCOPE 1.1 Content This specification covers the performance , tests and quality requirements for the AMP Novo Shunt Connectors . These connectors are mounted on .025 square or Round

1a6 SMD diode

Abstract: MARKING CODE 2B5 smd diode code 1B2 TSSOP48 outline LVCH162245A
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74LVC162245A; 74LVCH162245A 16-bit transceiver with direction pin; 30 Ω series termination resistors; 5 V tolerant input/output; 3-state Product specification Supersedes data of 1998 Feb 17 2003 Dec 08 Philips Semiconductors

protectron

Contextual Info: UM1058 User manual STEVAL-ILL029V2/STEVAL-CBP007V1: front panel demo with STLED325 and STMPE24M31 based touch panel Introduction This document explains the operation of the front panel demonstration board based on the advanced LED controller driver STLED325 and 8-bit microcontroller STM8S as I2C master.

Contextual Info: STBP110 Overvoltage protection device Datasheet - production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 1.2 A

Contextual Info: PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package PowerSO-10RF

Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package

Contextual Info: STBP110 Overvoltage protection device Datasheet - production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 1.2 A