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    04GSR6 Search Results

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    04GSR6 Price and Stock

    NXP Semiconductors AFT09H310-04GSR6

    RF MOSFET 28V NI1230
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    DigiKey AFT09H310-04GSR6 Reel
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    Avnet Americas AFT09H310-04GSR6 Reel 150
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    Rochester Electronics AFT09H310-04GSR6 265 1
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    Flip Electronics AFT09H310-04GSR6 150
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    FLIP ELECTRONICS AFT09H310-04GSR6

    RF MOSFET 28V NI1230
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    DigiKey AFT09H310-04GSR6 Bulk 25
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    NXP Semiconductors AFT21H350W04GSR6

    Transistor RF FET NCH 65V 2100MHz to 2170MHz 4Pin NI1230GS TR (Alt: AFT21H350W04GSR6)
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    Avnet Silica AFT21H350W04GSR6 150
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    Freescale Semiconductor AFT21H350W04GSR6

    RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
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    Vyrian AFT21H350W04GSR6 34
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    04GSR6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    J239

    Abstract: No abstract text available
    Text: Document Number: AFT09H310−03S Rev. 1, 9/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		AFT09H310â 03SR6 04GSR6 J239 PDF