04FEB08 Search Results

sud35n10

Contextual Info: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

BME6-2RN373

Contextual Info: A. F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER REV B DOCUMENT 0 038308 CH A NG E D BY KVS 01AP R 08 CHECK ASD B M E 6-2R N 373 COMPONENTS BY EXTERNAL BANDING HAROENED STEEL PLUNGER 3.0404.030 .33 OIA .47 SPHERICAL R 6 -3 2 UNC X I.OOO REF FLAT HEAD SELF LOCKING SCREW

Si4626ADY

Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT

S-80183

Contextual Info: SUM60N02-3m9P Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0039 at VGS = 10 V 60 0.0052 at VGS = 4.5 V 60 V(BR)DSS (V) 20 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested

Si5499DC

Abstract: pf42-08
Contextual Info: New Product Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) • TrenchFET Power MOSFET: 1.5 V Rated

SI3447CDV

Contextual Info: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized

SUD35N10-26P

Contextual Info: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch

Si4626ADY

Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT

Contextual Info: Package Information Vishay Siliconix PowerPAK 2 x 5 K E2 K L θ L 2 D1 D 4 D2 e 5 2 4 3 θ 3 1 6 Z b 6 1 L1 BACKSIDE VIEW OF SINGLE PAD θ A1 c A θ 2 E1 DETAIL Z E Notes 1. Dimensions in millimeters will govern. 2. Dimensions exclusive of mold gate burrs.

ptc 585

Abstract: TLWR7600 VLWY9630
Contextual Info: VLWY9630 Vishay Semiconductors TELUX 19232 DESCRIPTION The TELUX series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed with super bright,

uPD78F1168GC-16BT

Abstract: VT-200
Contextual Info: 78K0R/KG3 04-Feb-08 Evaluation of Subsystem Clock Oscillation Circuit [uPD78F1168GC-16BT] QFP 14x14 0.50mm pitch Measurement conditions : 5.0V Model Vdd=1.8 to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

Contextual Info: New Product Si1072X Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.093 at VGS = 10 V 1.3a 0.129 at VGS = 4.5 V 1.2 Qg (Typ.) 5.41 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS APPLICATIONS

Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

vr1 500

Abstract: 8S2TH06FP
Contextual Info: New Product 8S2TH06FP Vishay High Power Products Hyperfast Rectifier, 8 A FEATURES • Hyperfast recovery time RoHS • Low forward voltage drop COMPLIANT • Low leakage current • 175 °C operating junction temperature • Designed and qualified for industrial level

"DC Drive" motor control IRIS

Abstract: 72067 SIP42104
Contextual Info: SiP42104 Vishay Siliconix H-Bridge Driver and Pulse Width Controller for Digital Camera Micro Modules DESCRIPTION FEATURES The SiP42104 is a 250 mA integrated H-bridge driver and programmable output-pulse-width controller. It offers a complete and cost-effective solution for micro camera focus

SUP90N15-18P

Abstract: SUP90N15-18P-E3
Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Si7905DN

Abstract: Si7905DN-T1-E3
Contextual Info: New Product Si7905DN Vishay Siliconix Dual P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V - 6e 0.089 at VGS = - 4.5V - 5f Qg (Typ.) 11 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

SUP60N02-4M5P-E3

Contextual Info: SUP60N02-4m5P Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 60 0.0065 at VGS = 4.5 V 60 V(BR)DSS (V) 20 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg Tested

DG611

Abstract: DG613AEY-T1-E3 DG613AEY
Contextual Info: New Product DG611A/DG612A/DG613A Vishay Siliconix 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION FEATURES The DG611A, DG612A and DG613A contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611

SUD40N02-3M3P-E3

Contextual Info: New Product SUD40N02-3m3P Vishay Siliconix N-Channel 20-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 40 0.0044 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested RoHS COMPLIANT

Si1563EDH

Abstract: diode 0750 SI1563EDH-T1
Contextual Info: New Product Si1563EDH Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 0.490 at VGS = - 4.5 V

SI3447CDV

Contextual Info: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized

AT91SAM9XE-EK Evaluation Board User Guide

Abstract: DM9161A LFBGA217 ARM926EJ-S AT73C213 AT91SAM9XE CR1225 PQFP208 PQFP208 footprint schematics nand flash controller
Contextual Info: AT91SAM9XE-EK Evaluation Board . User Guide 6311A–ATARM–04-Feb-08 Table of Contents Section 1 Overview . 1-1

SIP42104

Contextual Info: SiP42104 Vishay Siliconix H-Bridge Driver and Pulse Width Controller for Digital Camera Micro Modules DESCRIPTION FEATURES The SiP42104 is a 250 mA integrated H-bridge driver and programmable output-pulse-width controller. It offers a complete and cost-effective solution for micro camera focus