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    Si9407AEY

    Abstract: DSA0016549
    Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF Si9407AEY S-53709--Rev. 04-Aug-97 DSA0016549

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    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T REUEASED BY ^ 0 0 EU E C TR O N IC S FO R AUU C O R P O R A T IO N . P U B U IC A T IO N R IG H T S R E V IS IO N S RESERVED. H LTR V 88,9 8 5 ,4 D D E S C R IP T IO N DATE DWN A PVD -97


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    2-164045-1

    Abstract: NE-48
    Text: 4 2 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T R EU EA SED FO R PU B U IC ATIO N R EVISIO N S - >- AUU RIGHTS R ESER VED . By - H LTR W2 88,9 D E S C R IP T IO N DATE REVISED PER E C O - 1 1 - 0 0 5 2 9 4 DWN APVD RK HMR 02APR1 85,4 83,4


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    PDF 55x45' 02APR11 04AUG97 2-164045-1 NE-48

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    Abstract: No abstract text available
    Text: 8 6 RFIIffaSffTTD FR39R FTOmiOIBSOGN THIS DRAWING IS UNPUBLISHED. ia 7^9- LOC ALL RIGHTS RESERVED. BY TYCO D IST AD elzc W oA K S REVISIONS 00 LTR DESCRIPTION DATE 20 F E B 0 4 REV PER EC 0S1 2 - 0 4 1 4 - 0 3 A A HOUSING CONTACT MATERIAL: A •DIM A _ D ran rwi nfcn n n nyn nsn nfcn rwi frtn


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    PDF FR39R 31MAR2000 04AUG97