04JUN2013 Search Results

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD B REV; ECO-13-004517 13MAR2013 GG RA C REV; ECO-13-009275 04JUN2013 GG RA 34.51 [ 1.359 ]

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR B 34.51 [ 1.359 ] 1 DESCRIPTION DATE REV; ECO-13-009275 DWN APVD GG 04JUN2013 RA MATERIAL: HOUSING - UL 94V-0 RATED ABS.

Contextual Info: Lock All Fields Dimensioning and tolerancing per ASME Y14.5M-2009 T2 REPLACED BY CUSTOMER ACCESSIBLE PRODUCTION DRAWING 04JUN2013 XZ LZ SE &86720(5$&&(66,%/(  PRODUCTIO1DRAWING 466323 X. ZHAO L. ZHANG L. ZHANG SIDE FEED HDM APPLICATOR 466323 T2

94V-0 POLYCARBONATE

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR A BACK HOUSING SUB-ASSEMBLY 1 D DESCRIPTION DATE ECO-13-008665 DWN APVD JM 04JUN2013 SJ MATERIAL: -FRONT HOUSING - POLYCARBONATE, 94V-0 RATED.

Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 2 • Tail-less switching off

Contextual Info: STL220N3LLH7 N-channel 30 V, 0.00081 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1 • Very low Qg

stm32f407xx

Abstract: STM32f4xx reference manual
Contextual Info: STM32F405xx STM32F407xx ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera Datasheet - production data FBGA • LQFP64 10 x 10 mm LQFP100 (14 × 14 mm) LQFP144 (20 × 20 mm)

Contextual Info: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)

Contextual Info: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max STF18N60M2 650 V 0.28 Ω ID 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 3 1 1 D2PAK 2 VDS @ TJmax RDS on max ID

GW60V60DF

Contextual Info: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.85 V (typ.)

STGB4

Contextual Info: STGB40V60F, STGP40V60F, STGW40V60F 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 1 3 D2PAK 1 2 TO-220 • Tail-less switching off

gw60v60

Contextual Info: STGW60V60F 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 • Low saturation voltage: VCE sat = 1.85 V (typ.)

Contextual Info: MBRF10CT 10 Amp. Schottky Barrier Rectifier ITO-220AB 12 Current 10 A Voltage 45 to 200 V 3 1 2 Case 3 Common Cathode Suffix "C" FEATURES • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

Contextual Info: MBRF20CT 20 Amp. Schottky Barrier Rectifier ITO-220AB 12 Current 20 A Voltage 45 to 200 V 3 1 2 Case 3 Common Cathode Suffix "C" FEATURES • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

Contextual Info: Data Sheet AKU340 Analog MEMS Microphone Data Sheet AKU340 Analog MEMS Microphone Datasheet Part number s AKU340 Package type LGA, bottom port, metal lid Data sheet revision 1.0 Release date 4 June 2013 Document number DS26-1.0 AKU340 Data Sheet Notes Specifications are subject to change without notice.

stgw40v60d

Abstract: GW40V60DF
Contextual Info: STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A

Contextual Info: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STF18N60M2 650 V 0.28 Ω 13 A • Extremely low gate charge 3 1 • Lower RDS(on) x area vs previous generation

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STL220N3LLH7 N-channel 30 V, 0.00085 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1