04AUG08 Search Results

HIH-4010-001

Abstract: HIH-4010-003 circuit humidity sensor HIH-4010-004 model 4010 HIH-4010-002
Contextual Info: F O - 5 5 I 12- HONEYWELL HART NUMBER 40 1 0 - 0 0 4010-002 4010-003 4010-004 HIH-4010-001 / HIH-4010-003 REV DOCUMENT F 0 0 4 2 0 16 CHANGED MPH BY CHECK 04AUG08 CMH HIH-4010-002 / HIH-4010-004 OPERATING CHARACTERISTICS at 5.0 VDC AND 25° C UNLESS OTHERWISE NOTED

Contextual Info: THIS DRAWING IS UNPUBUSHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. DIST LOC ,19 ALL RIGHTS RESERVED. R E V IS IO N S ES 00 LTR DATE DWN APVD 04AUG08 AZ SY DESCRIPTION E2 REVISED ECR—0 8 —019470 D D C C PC BOARD MOUNTING DIMENSIONS A

sud40n10-25-e3

Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

Si7748DP-T1-GE3

Abstract: Si7748DP si7748
Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

SUD40N10-25

Abstract: SUD40N10-25-E3
Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

Contextual Info: 15TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 15 A FEATURES Base cathode 2 TO-220AC 1 Cathode 3 Anode • • • • 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency

Contextual Info: SD303C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 350 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2500 V • High current capability

Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

40HFL40S02

Abstract: IRFP460 10CTQ150
Contextual Info: 10CTQ150PbF Vishay High Power Products Schottky Rectifier, 2 x 5 A FEATURES • • • • Base 2 common cathode Anode TO-220AB 175 °C TJ operation Center tap configuration Low forward voltage drop High frequency operation Pb-free Available RoHS* COMPLIANT

20ETS

Abstract: 20ETS08FP 20ETS12FP vishay tj series 20ETS08FPPBF
Contextual Info: 20ETS.FPPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 20 A DESCRIPTION/FEATURES Base cathode 2 TO-220 FULL-PAK 1 Cathode The 20ETS.FPPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass

Contextual Info: SD603C.C Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 600 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2200 V • High current capability • Optimized turn-on and turn-off characteristics

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Si9933CDY-T1-E3

Abstract: Si9933CDY Si9933CDY-T1-GE3
Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

68764

Abstract: SiR476DP-T1-GE3 6416F
Contextual Info: New Product SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0017 at VGS = 10 V 60 0.0021 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side • OR-ing

SiR440DP

Abstract: SiR440DP-T1-GE3
Contextual Info: New Product SiR440DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00155 at VGS = 10 V 60 0.002 at VGS = 4.5 V 60 VDS (V) 20 Qg (Typ.) 43.5 nC S • Fixed Telecom • High Current dc-to-dc • OR-ing 5.15 mm 1

S15C

Abstract: SD803C 845 diode
Contextual Info: SD803C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 845 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

Si7720DN

Abstract: Si7720DN-T1-GE3 si7720
Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter

Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

Contextual Info: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package

Contextual Info: New Product SiR440DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00155 at VGS = 10 V 60 0.002 at VGS = 4.5 V 60 VDS (V) 20 Qg (Typ.) 43.5 nC S • Fixed Telecom • High Current dc-to-dc • OR-ing 5.15 mm 1

TSAL7400

Abstract: high power infrared led
Contextual Info: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

Si4448DY

Abstract: Si4448
Contextual Info: SPICE Device Model Si4448DY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiR476DP-T1-GE3

Contextual Info: New Product SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0017 at VGS = 10 V 60 0.0021 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side • OR-ing

SI7172DP-T1-GE3

Abstract: Si7172DP
Contextual Info: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package