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    045N10N Search Results

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    045N10N Price and Stock

    Infineon Technologies AG IPP045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO220-3
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    DigiKey IPP045N10N3GXKSA1 Tube 2,225 1
    • 1 $3.25
    • 10 $3.25
    • 100 $3.25
    • 1000 $1.38324
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    Avnet Americas IPP045N10N3GXKSA1 Bulk 16 Weeks, 4 Days 1
    • 1 $2.8
    • 10 $2.56
    • 100 $2.07
    • 1000 $2.07
    • 10000 $2.07
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    IPP045N10N3GXKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPP045N10N3GXKSA1 6,454
    • 1 $2.53
    • 10 $2.47
    • 100 $1.51
    • 1000 $1.38
    • 10000 $1.34
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    Newark IPP045N10N3GXKSA1 Bulk 1,335 1
    • 1 $2.8
    • 10 $2.56
    • 100 $2.07
    • 1000 $1.83
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    TME IPP045N10N3GXKSA1 4 1
    • 1 $2.35
    • 10 $1.86
    • 100 $1.62
    • 1000 $1.5
    • 10000 $1.5
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    Chip1Stop IPP045N10N3GXKSA1 Tube 500
    • 1 $1.05
    • 10 $1.05
    • 100 $1.04
    • 1000 $1.03
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    IPP045N10N3GXKSA1 Tube 407
    • 1 $1.12
    • 10 $1.11
    • 100 $1.1
    • 1000 $1.1
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    EBV Elektronik IPP045N10N3GXKSA1 17 Weeks 500
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    Win Source Electronics IPP045N10N3GXKSA1 90,400
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    • 100 $1.3624
    • 1000 $1.107
    • 10000 $1.107
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    Infineon Technologies AG IPI045N10N3GXKSA1

    MOSFET N-CH 100V 100A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI045N10N3GXKSA1 Tube 894 1
    • 1 $4.05
    • 10 $4.05
    • 100 $4.05
    • 1000 $1.43388
    • 10000 $1.43388
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    Mouser Electronics IPI045N10N3GXKSA1
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    Rochester Electronics IPI045N10N3GXKSA1 23 1
    • 1 $1.59
    • 10 $1.59
    • 100 $1.49
    • 1000 $1.35
    • 10000 $1.35
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    TME IPI045N10N3GXKSA1 1
    • 1 $2.66
    • 10 $1.84
    • 100 $1.66
    • 1000 $1.49
    • 10000 $1.49
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    EBV Elektronik IPI045N10N3GXKSA1 17 Weeks 500
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    UMW IPP045N10N3G

    MOSFET N-CH 100V 100A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP045N10N3G Tube 1
    • 1 $2.46
    • 10 $1.681
    • 100 $2.46
    • 1000 $0.92867
    • 10000 $0.9125
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    Infineon Technologies AG IPI045N10N3GXK

    MOSFET N-CH 100V 137A TO262-3
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    DigiKey IPI045N10N3GXK Tube
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    Avnet Americas IPI045N10N3GXK Tube 16 Weeks 500
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    Infineon Technologies AG IPC045N10N3X1SA1

    MOSFET N-CH 100V 1A SAWN ON FOIL
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    DigiKey IPC045N10N3X1SA1 Bulk 31,190
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    Avnet Americas IPC045N10N3X1SA1 Waffle Pack 28 Weeks 31,190
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    045N10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPA045N10N3

    Abstract: THV-150
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    PDF IPA045N10N3 PG-TO220-FP 045N10N THV-150

    045n10n

    Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
    Text: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB042N10N3 IPI045N10N3 IPP045N10N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 045n10n D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10

    045n10n

    Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
    Text: IPB042N10N3 G 045N10N3 G 045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original
    PDF IPB042N10N3 IPI045N10N3 IPP045N10N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 042N10N 045n10n 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10

    045n10n

    Abstract: 045N10 045n1 IPA045N10N3 JESD22 DD-50
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 4.5 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    PDF IPA045N10N3 PG-TO220-FP 045N10N 045n10n 045N10 045n1 JESD22 DD-50

    045N10

    Abstract: 045N10N
    Text: 045N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 4.5 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original
    PDF IPA045N10N3 IEC61249-2-21 PG-TO220-FP 045N10N 045N10 045N10N