GPP60A
Abstract: GPP60G JESD22-B102 J-STD-002 P600
Text: GPP60A thru GPP60G Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.2 µA • High forward surge capability • Meets environmental standard MIL-S-19500
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GPP60A
GPP60G
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
GPP60G
JESD22-B102
J-STD-002
P600
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BYW27-100GP
Abstract: BYW27-800GP DO-204AL JESD22-B102 J-STD-002 BYW27-200GP
Text: BYW27-100GP thru BYW27-800GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation
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BYW27-100GP
BYW27-800GP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
BYW27-800GP
DO-204AL
JESD22-B102
J-STD-002
BYW27-200GP
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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gp30jhe3
Abstract: No abstract text available
Text: GP30A thru GP30M Vishay General Semiconductor Glass Passivated Junction Plastic Rectifiers FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low leakage current, typical IR less than 0.1 µA
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GP30A
GP30M
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
gp30jhe3
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20E-3
Abstract: No abstract text available
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GP02-20
GP02-40
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
20E-3
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Untitled
Abstract: No abstract text available
Text: CRHV Vishay Techno Thick Film Chip Resistors, High Voltage FEATURES • • • • • • • • • STANDARD ELECTRICAL SPECIFICATIONS RESISTANCE Ω MODEL POWER RATING (W) 0.300 0.450 0.500 0.600 0.700 VOLTAGE RATING (V) (max.) 1500 1750 2000 2500 3000
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08-Apr-05
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20g0
Abstract: No abstract text available
Text: CDHV 2512 Vishay Techno Thick Film Chip Dividers, High Voltage FEATURES • • • • • • ELECTRICAL SPECIFICATIONS • Resistance Range: 1 MΩ to 20 GΩ Resistance Tolerance: ± 1 % to ± 20 % Power Rating: See table Voltage Coefficient: See table Temperature Coefficient: See table
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18-Jul-08
20g0
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Untitled
Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate
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03-Apr-08
CF001-03
CF001-03
MIL-STD-750
comm-000X
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1N5624GP
Abstract: 1N5627GP JESD22-B102 J-STD-002
Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current
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1N5624GP
1N5627GP
DO-201AD
MIL-S-19500
2002/95/EC
2002/96/EC
18-Jul-08
1N5627GP
JESD22-B102
J-STD-002
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Vishay Roederstein ELECTROLYTIC
Abstract: MALSECL
Text: ECL Vishay Roederstein Aluminum Capacitors FEATURES • Polarized aluminum electrolytic capacitors, non solid electrolyte RoHS • Extra low impedance, high ripple current COMPLIANT • Temperature up to 105 °C • RoHS compliant APPLICATIONS • SMD technology, for high mounting density
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08-Apr-05
Vishay Roederstein ELECTROLYTIC
MALSECL
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1n4385gp-e3
Abstract: No abstract text available
Text: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d*
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1N4383GP
1N4385GP,
1N4585GP
1N4586GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
1n4385gp-e3
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MPG06A
Abstract: No abstract text available
Text: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 µA • High forward surge capability
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MPG06A
MPG06M
MPG06
2002/95/EC
2002/96/EC
MPG06,
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 1N3611GP thru 1N3614GP & 1N3957GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat *Glass Encapsulation technique is covered by
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1N3611GP
1N3614GP
1N3957GP
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
08-Apr-05
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NTC 50-9
Abstract: NTC THERMISTORS K 164 ntc 0641 NTC 100 - 11 mark 837 341 NTCLS100 NTCLE400
Text: 2381 641 2/3/4. Vishay BCcomponents NTC Thermistors, Special Long Lead Sensors FEATURES • Accurate over wide temperature range • High stability • Excellent price/performance ratio • High adhesive strength between PVC wire and the encapsulating laquer
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2002/95/EC
2002/96/EC
B25/85
18-Jul-08
NTC 50-9
NTC THERMISTORS K 164
ntc 0641
NTC 100 - 11
mark 837 341
NTCLS100
NTCLE400
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Untitled
Abstract: No abstract text available
Text: 150EBU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 150 A FRED PtTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature RoHS • Screw mounting only Cathode COMPLIANT • Lead Pb -free plating Anode • Designed and qualified for industrial level
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150EBU02
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: GPP60A thru GPP60G Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.2 µA • High forward surge capability • Meets environmental standard MIL-S-19500
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GPP60A
GPP60G
MIL-S-19500
2002/95/EC
2002/96/EC
J-STD-002
JESD22-B102
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current
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1N5059GP
1N5062GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
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1N5624GP
Abstract: No abstract text available
Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current
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1N5624GP
1N5627GP
DO-201AD
MIL-S-19500
2002/95/EC
2002/96/EC
DO-201s
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 4 2 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR APR P U B L IC A T IO N 2005- R E V IS IO N S A L L R IG H T S R E S E R V E D . LTR A7 D E S C R IP TIO N ECR- DATE DWN K.S K.K 03APR08 -008308 APVD
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03APR08
AR2000
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Untitled
Abstract: No abstract text available
Text: 4 2 T H IS DRAW IN G IS U N P U B L IS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR APR 2 0 0 5 - PUBLICATION REVISIO N S A LL R IG H TS R E S E R V E D . LTR A4 D ESC R IPTIO N ECR- DATE DWN 03APR08 -008308 APVD K.S K.K D 1. ONE CABLE P A C K A G E D IN A CLEAR P O LY BAG.
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03APR08
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Untitled
Abstract: No abstract text available
Text: 4 2 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED BY TYCO ELECTRONICS CORPORATION. COPYRIGHT FOR APR P U B L IC A T IO N 2005- R E V IS IO N S A L L R IG H T S R E S E R V E D . LTR A7 D E S C R IP TIO N ECR- DATE DWN K.S K.K 03APR08 -008308 APVD
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03APR08
AR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. - ,- Z D ETA IL S C A L E 8:1 C 1 .5 2 [.0 6 0 ] 2 2 - 2 6 AWG WIRE RANGE PLATE A R E A T O .25 0.1 3 . 0 8 7 T- . 00 10 50 1 . 7 0 T- 0O. .12 53
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31MAR2000
03APR08
HDE-20,
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G 2 RELEASED IS U N P U B L IS H E D . B Y TYCO E L E C T R O N IC S C O R P O R A T IO N . C O P Y R IG H T FOR P U B L IC A T IO N REVISIONS A L L R IG H T S R E S E R V E D . LTR A4 D E S C R IP T IO N ECR- -008308 E C R —10 —0 1 3 0 1
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8JUN10
03APR08
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G 2 IS U N P U B L IS H E D . RELEASED B Y TYCO E L E C T R O N IC S C O R P O R A T IO N . C O P Y R IG H T FOR P U B L IC A T IO N APR 2005- R E V IS IO N S A L L R IG H T S R E S E R V E D . LTR D E S C R IP T IO N A6 ECR- DATE DWN K.S K.K
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03APR08
10APR05
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