03APR07 Search Results

INNER CARTON LABEL

Contextual Info: 107-68480 Packaging Specification 03Apr07 Rev F REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR 1. PURPOSE 目的 Define the packaging specifiction and packaging method of REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR. 订定 REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR 产品之包装规格及包装方式。

NUTPLA

Abstract: nutplate 65651
Contextual Info: 107-68113 Packaging Specification 03Apr07 Rev G 2.5MM SLIM PITCH BATTERY CONNECTORS 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5MM SLIM PITCH BATTERY Connector. 订定 2.5MM SLIM PITCH BATTERY Connectors 产品之包装规格及包装方式。

RD10

Abstract: WTV3585
Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7008-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.2 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

93c66e

Contextual Info: CAT93C66 4-Kb Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ High speed operation: 2MHz The CAT93C66 is a 4-Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read)

MBR10H100

Abstract: MBR10H90 MBRB10H100 MBRB10H90 MBRF10H100 MBRF10H90
Contextual Info: New Product MBR F,B 10H90 & MBR(F,B)10H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency

MBR20H100CT

Abstract: MBR20H90CT MBRF20H100CT MBRF20H90CT
Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2

MBRB10100-E3

Abstract: MBR10100 MBR1090 MBRB10100 MBRB1090 MBRF10100 MBRF1090 b10100
Contextual Info: MBR F,B 1090 & MBR(F,B)10100 Vishay General Semiconductor High-Voltage Schottky Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. ES MATER I AL : HOUSING: CONTACTS DIST RE V ISIONS 00 LTR DESCRIPTION DATE DWN APVD REVISED PER EC R-07 - 007343

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7009-BD Features Chip Layout 35.3 dBm Output IP3 @ 850 MHz 3.9 dB Noise Figure @ 850 MHz 16.8 dB Gain @ 850 MHz 19.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7007-BD Features Chip Layout 34.0 dBm Output IP3 @ 850 MHz 4.5 dB Noise Figure @ 850 MHz 19.0 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

M37548G3FP

Abstract: VT-200 k 786
Contextual Info: 740 03-Apr-07 Evaluation of Subsystem Clock Oscillation Circuit [M37548G3FP-20P] LSSOP 4.4x6.5 0.65mm pitch Measurement conditions :5.5V, 3.3V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance

f 93c66

Abstract: 208-mils 93C66 93c66 6 AEC-Q100 CAT93C66 93C66vi CAT93C66LI-G
Contextual Info: CAT93C66 4-Kb Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ High speed operation: 2MHz The CAT93C66 is a 4-Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read)

CGB7008-BD

Abstract: CGB7008-BD-000V DM6030HK TS3332LD 9746
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7008-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.2 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change

CGB7009-BD

Abstract: CGB7009-BD-000V DM6030HK TS3332LD
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7009-BD Features Chip Layout 35.3 dBm Output IP3 @ 850 MHz 3.9 dB Noise Figure @ 850 MHz 16.8 dB Gain @ 850 MHz 19.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

CGB7010-BD

Abstract: CGB7010-BD-000V DM6030HK TS3332LD sharp 9759 d
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7010-BD Features Chip Layout 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

MBRF2090CT

Abstract: 20100CT MBR20100CT MBR2090CT MBRF20100CT
Contextual Info: MBR F,B 2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP DIST R E V I S I O N S 00 LTR DESCRIPTION Al DATE DWN APVD REVISED PER E C O - 06 - 0 0 6 6 7 4 2 8 MA R 0 6

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. ES MATER I AL : HOUSI NG: CONTACTS DIST R E V ISIONS 00 LTR DESCRIPTION DATE DWN APVD REVISED PER E C O - 0 6 -0 I 1603

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7010-BD Features Chip Layout 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

CGB7007-BD

Abstract: CGB7007-BD-000V DM6030HK TS3332LD 110L1
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7007-BD Features Chip Layout 34.0 dBm Output IP3 @ 850 MHz 4.5 dB Noise Figure @ 850 MHz 19.0 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

SI3456DV-T1-E3

Abstract: Si3456BDV Si3456BDV-T1 Si3456BDV-T1-E3 Si3456DV Si3456DV-T1
Contextual Info: Specification Comparison Vishay Siliconix Si3456BDV vs. Si3456DV Description: N-Channel, 30 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3456BDV-T1 Replaces Si3456DV-T1 Si3456BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3456DV-T1-E3 (Lead (Pb)-free version)

Contextual Info: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP MATER I AL : HOUSI NG: CONTACTS DIST R E V I S I O N S 00 LTR DESCRIPTION DATE DWN APVD REVISED PER E C O - 0 6 -0 I 1603