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    PHD22NQ20T

    Abstract: 12882
    Text: PHD22NQ20T N-channel TrenchMOS standard level FET Rev. 01 — 08 March 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PHD22NQ20T M3D300 OT428 PHD22NQ20T 12882 PDF

    Untitled

    Abstract: No abstract text available
    Text: DO NOT SCALE □ ATE SYM AUTH 22JN87 A PART NO WAS PE009834 & RELEASED 03AP89 Al ADDED 12.5*0.5: ADDED NOTE *2 REVISION RECORD DR CK 870005 DJT FH 125961 JD JD NUT - S.A.E. I2LI5 S T E E L O i— i -f zz. i— i o > p < cc o to OC.ÌZ, o o ox cr °o SECTION


    OCR Scan     		22JN87 PE009834 03AP89 22JN87 02JL87 06JL87 PDF