BST72A
Abstract: HZG330
Text: BST72A N-channel enhancement mode field-effect transistor Rev. 03 — 25 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST72A in SOT54 TO-92 variant .
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BST72A
BST72A
03ab40
HZG330
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07153
Abstract: 03aa02
Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .
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2N7000
2N7000
03ab40
03ab30
771-2N7000AMO
07153
03aa02
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BSH120T
Abstract: 03ac49
Text: BSH120T N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:
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BSH120T
M3D186
BSH120T
03ab40
MBB076
03ac49
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2N7000 MOSFET
Abstract: Mosfet 2n7000
Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .
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Original
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2N7000
2N7000
03ab40
2N7000 MOSFET
Mosfet 2n7000
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