039 MOTOROLA Search Results

2N2219A MOTOROLA

Abstract: 2N2219A 2N2219AJAN 4101 transistor
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039

TV Tuner sharp

Abstract: LG lcd tv tuner SANSUI tv lg LCD nikko MAGNAVOX aiwa TV A141KE matsushita tuner vcr Techwood lcd LG TV
Contextual Info: Codeset Reference Manual for 6-in-1 North American Learning Crimzon RC Bullet v1.2 Page 1 031 034 039 026 027 037 040 051 041 12 11 10 057 012 015 016 023 032 020 043 018 003 009 019 054 033 035 044 045 046 005 006 028 031 042 056 010 014 029 030 054 038

vk200* FERROXCUBE

Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range

Contextual Info: CONNOR—WINFIELD CORPORATION H C 4 9 /U CRYSTAL UNIT AURORA, IL. 60505 PHONE 63 0 8 5 1 -4 7 2 2 FAX (630) 8 5 1 -5 0 4 0 FOR MOTOROLA MC145572 ISDN U—INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (at 25’ C) Temperature Stability

Contextual Info: AURORA, IL. 6 05 0 5 CONNOR-WINFIELD CORPORATION PHONE 6 3 0 8 5 1 - 4 7 2 2 FAX (6 3 0 ) 8 5 1 - 5 0 4 0 H C 4 9 / U CRYSTAL UNIT FOR MOTOROLA MC 1 4 5 5 7 2 ISDN U —INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (a t 25’ C) Tem perature Stability

MC145572

Abstract: I-039 15PPM
Contextual Info: CONNOR—WINFIELD CORPORATION H C 49/U CRYSTAL UNIT AURORA, IL. 6 0 5 0 5 PHONE 6 3 0 8 5 1 - 4 7 2 2 FAX (6 3 0 ) 8 5 1 - 5 0 4 0 FOR MOTOROLA MCI45572 ISDN U—INTERFACE TRANSCEIVER LT MODE CW49GLS— 1 CW49GLS— 2 20MHz to 26MHz ± 1 5ppm ±5 0 p p m

Contextual Info: AURORA, IL. 6 0 5 0 5 CONNOR—WINFIELD CORPORATION H C 4 9 /U CRYSTAL UNIT PHONE 6 3 0 8 5 1 - 4 7 2 2 FAX ( 6 3 0 ) 8 5 1 - 5 0 4 0 FOR MOTOROLA MC145572 ISDN U-INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (a t 25'C) Tem perature S tability

MRF580

Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Contextual Info: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.

MOTOROLA mac15 TRANSISTOR

Abstract: MCR225-2FP 2FP TRANSISTOR mac21B motorola transistor mac15 MJF10012 MJF16006A RECTIFIER 638 MOTOROLA tolerancing "Power Semiconductor Applications"
Contextual Info: MOTOROLA SC XST RS/ R F MbE D • b 3 b ? 2 S 4 DDTbESl b H MOTb Ç) Selection by Package (continued) THYRISTORS SCRs — Style 2 TRIACs — Style 3 Device T2500BFP T2500DFP T2500MFP T2500NFP MAC21B-4FP MAC218-6FP MAC218-8FP MAC218-10FP MAC228-4FP MAC228-6FP

K1461

Abstract: BD189 BD185 735M
Contextual Info: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com­

MRF5160

Abstract: F5160 MRF*5160
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing

lt 2904

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Inform ation S m all-S ign al Field E ffe c t Tran sisto r Silicon Gate TMOS • • • • 625 m W T M O S FET rDS on = 12 OH M S 150 VOLTS N-CHANNEL DEPLETION MODE N o rm a lly C losed Relay T e lep h o ne Line S w itc h in g

moc 3021

Abstract: DIN 3021 moc 3021 data sheet motorola triac driver IL440 2153 infrared applications of Moc 3021 moc 3052 MOTOROLA moc IFT30
Contextual Info: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1

IL440

Abstract: moc opto triac OPTO TRIAC moc 3021 opto opto transistor moc moc 3021 data sheet moc 3021 3021 optocoupler motorola triac driver optocoupler triac infineon
Contextual Info: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1

moc opto triac

Abstract: OPTO TRIAC moc motorola moc moc 3021 optocoupler 3023 Optocoupler, MOC 3021 DIN 3021 STANDARD applications of Moc 3021 3021 opto IFT30
Contextual Info: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1

MJE370

Abstract: MJE520 MOTOROLA
Contextual Info: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti­

Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

NIPPON CAPACITORS

Contextual Info: MOTOROLA Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1 Designed for broadband commercial and industrial applications with

A113

Abstract: MRF9060MBR1 MRF9060MR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

VIPer 32

Abstract: TO272
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

JE3300

Abstract: MJE3310 motorola amplifier MJE3301 MJE3300 je331
Contextual Info: MOTOROLA SC X S T R S /R 12E 0 F b 3 fei? 5 5 4 I 0 QÖS3 S 1 NPN M O TO RO LA T | r-13'33 MJE3300, MJE3301 • SEMICONDUCTOR PNP TECHNICAL DATA MJE3310 PLASTIC DARLINGTON COMPLEMENTARY SILICON ANNULAR POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and high-speed switching

JE3440

Abstract: JE3439 JE34
Contextual Info: MOT O RO LA SC 12E 0 | L3t.72S4 0005353 3 | X S T R S/ R F T -3 3 -^ r MOTOROLA MJE3439 MJE3440 • SEMICONDUCTOR TECHNICAL DATA 0.3 AMPERE NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed fo r use in line operated equipm ent requiring high fr.