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    Infineon Technologies AG IPB031NE7N3GATMA1

    MOSFET N-CH 75V 100A TO263-3
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    DigiKey IPB031NE7N3GATMA1 Reel
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    TME IPB031NE7N3GATMA1 1
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    IPB031NE7N3 G

    Abstract: 031NE7N IEC61249-2-21 JESD22 2506v
    Text: 031NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB031NE7N3 IEC61249-2-21 PG-TO263-3 031NE7N IPB031NE7N3 G 031NE7N IEC61249-2-21 JESD22 2506v

    031NE7N

    Abstract: JESD22 IPB031NE7N3 G
    Text: 031NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB031NE7N3 PG-TO263-3 031NE7N 031NE7N JESD22 IPB031NE7N3 G