02AUG2013 Search Results
02AUG2013 Datasheets Context Search
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VIPER06Contextual Info: STEVAL-ISA130V1 12 V 140 mA 30 kHz non-isolated buck topology regulator based on VIPer06XN Data brief Description The STEVAL-ISA130V1 demonstration board implements a non-isolated buck topology regulator using the VIPer06, which supplies a 12 V output at up to 140 mA with an operating |
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STEVAL-ISA130V1 VIPer06XN STEVAL-ISA130V1 VIPer06, DocID025084 VIPER06 | |
UFQFPN20Contextual Info: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Datasheet - production data Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA, |
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STM8L101xx DocID15275 UFQFPN20 | |
Contextual Info: STM32F102x8 STM32F102xB Medium-density USB access line, ARM-based 32b MCU with 64/128KB Flash, USB FS, 6 timers, ADC & 8 com. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M3 CPU – 48 MHz maximum frequency, 1.25 DMIPS/MHz Dhrystone 2.1 |
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STM32F102x8 STM32F102xB 64/128KB 32-bit 4-to-16 DocID15056 | |
Contextual Info: STL140N6F7 N-channel 60 V, 0.0021 Ω typ., 32 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL140N6F7 60 V 0.0025 Ω 32 A • Very low on-resistance 1 • Very low Qg |
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STL140N6F7 DocID025086 | |
Contextual Info: STM32F102x4 STM32F102x6 Low-density USB access line, ARM-based 32-bit MCU with 16/32 KB Flash, USB FS, 5 timers, ADC & 5 com. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M3 CPU – 48 MHz maximum frequency, 1.25 DMIPS/MHz Dhrystone 2.1 |
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STM32F102x4 STM32F102x6 32-bit 4-to-16 DocID15057 | |
Contextual Info: STL140N6F7 N-channel 60 V, 0.0021 Ω typ., 32 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL140N6F7 60 V 0.0025 Ω 32 A • Very low on-resistance 1 • Very low Qg |
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STL140N6F7 DocID025086 | |
Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required. |
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STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 | |
Contextual Info: STD7NM64N N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD7NM64N 640 V 1.05 Ω 5A • 100% avalanche tested 3 • Low input capacitance and gate charge |
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STD7NM64N DocID025081 | |
Contextual Info: STPSC6H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications where negligible switching losses are required. |
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STPSC6H12 STPSC6H12 IEC60664 STPSC6H12B-TR1 DocID024631 | |
STPS20L60CContextual Info: STPS20L60C Power Schottky rectifier Datasheet - production data Description A1 K Dual center tap Schottky rectifiers suited for switched mode power supplies and high frequency DC to DC converters. A2 Packaged in TO-220AB, TO-220AB narrow leads, I2PAK and D2PAK, this device is intended for use |
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STPS20L60C O-220AB, O-220AB O-220AB STPS20L60CT STPS20L60CG STPS20L60CTN STPS20L60CR DocID6427 STPS20L60C | |
Contextual Info: STF140N6F7, STH140N6F7-2, STP140N6F7 N-channel 60 V, 0.0025 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFETs in TO-220FP, H2PAK-2 and TO-220 packages Datasheet - target specification Features Order codes 1 2 STH140N6F7-2 1 60 V 0.003 Ω STP140N6F7 |
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STF140N6F7, STH140N6F7-2, STP140N6F7 O-220FP, O-220 STH140N6F7-2 STF140N6F7 O-220FP O-220 | |
Contextual Info: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Datasheet - production data Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA, |
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STM8L101xx DocID15275 | |
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. DIFFUSION RESTREINTE C COPYRIGHT 20 RELEASED FOR PUBLICATION LIBRE A LA DIFFUSION ALL RIGHTS RESERVED. TOUS DROITS RESERVES. BY - ECHELLE 5 4 20 3 2 LOC 3.3 BOITIER / 3:1 0.75 HOUSING F 8x 0.1 1 REVISIONS DIST 00 P LTR REV |
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28MAR2011 10NOV2011 13JUN2012 02AUG2013 | |
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC REVISIONS DIST - ALL RIGHTS RESERVED. 1 - P LTR DESCRIPTION C9 D DIM L DWN APVD ADD NEW DASH NUMBER 1-4 AND 1-5 05DEC2013 CZ SZ REMOVE "HD" FOR 1-4 31DEC2013 CZ |
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05DEC2013 31DEC2013 02AUG2013 | |
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Contextual Info: STH315N10F7-2, STH315N10F7-6 Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET VII DeepGATE™ Power MOSFETs Datasheet - production data Features Order codes TAB TAB VDS RDS on max. ID 100 V 2.3 mΩ 180 A STH315N10F7-2 STH315N10F7-6 2 7 3 |
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STH315N10F7-2, STH315N10F7-6 STH315N10F7-2 AEC-Q101 DocID025090 |