02AUG2010 Search Results

Contextual Info: R E V I S IONS DESCRIPTION LTR REVISED DWN DATE E C R - 1 0 - 0 16 0 3 0 02AUG2010 APVD T.T T. .M A T E R I A L :G L A S S F I L E D T H E R M O P L A S T I C P L Y E S T E R ( 9 4 V - 0 ) , C O L O R :B L A C K 2 . THE SHAPE, SIZE AND P O S I T I O N

M48T37V

Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Contextual Info: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Automatic power-fail chip deselect and WRITE

AN3192

Abstract: LSM303 lsm303dlh LSM303D AN3192 Application note AN3192 ST LSM303DL LGA28 accelerometer compass gyro 3axis MEMS magnetometer
Contextual Info: AN3192 Application note Using LSM303DLH for a tilt compensated electronic compass Introduction This application note describes the method for building a tilt compensated electronic compass using an LSM303DLH sensor module. The LSM303DLH is a 5 x 5 x 1 mm with LGA-28L package IC chip that includes a 3D digital

a20 Schottky diode st

Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

ST M48T02

Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M68x

Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: STL52N25M5 N-channel 250 V, 0.064 Q 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type V DSS RDS(on) max. Id (1) STL52N25M5 250 V < 0.076 Q 28 A 1. This value is rated according Rthj.case. • A m ongst the best R ps^n )* area ■ V ery low profile package (1 mm max.)

TEC 12715

Abstract: 8 pin JRC 2072 LQFP44 0047H 1832A JRC 2041 LQFP32 LQFP64 ST72561 ST72561-Auto
Contextual Info: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

STP6N120K3

Contextual Info: STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages Datasheet — production data Features Order codes VDSS RDS on max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6A 63 W STP6N120K3

Contextual Info: ST72361xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

STP6N120K3

Abstract: STP6N120 to247 pcb footprint STW6N120K3 stp6n120k STFW6N120K3 6N120K3
Contextual Info: STFW6N120K3 STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω, 6 A, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH3TM Power MOSFET Features Type VDSS RDS on max ID Pw STFW6N120K3 1200 V < 2.4 Ω 6A 63 STP6N120K3 1200 V < 2.4 Ω 6A 150 W STW6N120K3 1200 V

M48Z512A

Abstract: M48Z512AV M48Z512AY M48Z512BV
Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

e3 2410

Abstract: DS1642 M48T02 M48T12 14-MAY-2001
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

M48T58

Abstract: STMicroelectronics
Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: STL52N25M5 N-channel 250 V, 0.064 Ω, 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type VDSS RDS(on) max. ID(1) STL52N25M5 250 V < 0.076 Ω 28 A 1. This value is rated according Rthj-case. • Amongst the best RDS(on)* area ■ Very low profile package (1 mm max.)

DIODE smd marking CODE WA

Abstract: 67-BIT diode smd marking code A2
Contextual Info: ST7L34, ST7L35 ST7L38, ST7L39 8-bit MCU for automotive with single voltage Flash/ROM, data EEPROM, ADC, timers, SPI, LINSCI Features • ■ Memories – 8 Kbytes program memory: Single voltage extended Flash XFlash or ROM with readout protection capability. In-application

up 5135

Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

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Contextual Info: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

3C MCC 12d

Abstract: INVERTER 10kW LQFP32 LQFP44 LQFP64 ST72561
Contextual Info: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

TEC 12715

Contextual Info: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit

032-l

Abstract: 32 pin soic 450mil
Contextual Info: MoBL CY62128E 1-Mbit 128K x 8 Static RAM Features Functional Description The CY62128E[1] is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable

ST7FL39

Abstract: trays STMICROELECTRONICS SO16 300 HBM 00-01H
Contextual Info: ST7L34 ST7L35 ST7L38 ST7L39 8-bit MCU for automotive with single voltage Flash/ROM, data EEPROM, ADC, timers, SPI, LINSCI Features • ■ Memories – 8 Kbytes program memory: Single voltage extended Flash XFlash or ROM with readout protection capability. In-application