02MAY2011 Search Results

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 RELEASED ALL FOR PUBLICATION RIGHTS 20 LOC RESERVED. GE DIST REVISIONS 00 LTR DESCRIPTION DATE APVD B3 REVISED PER E C O - 11 - 0 0 5 0 3 0 02MAY2011 RK HMR B4 REVISED PER E C O - 12 - 0 0 9 2 5 7 2 9MAY 2 01 2

EEPROM

Abstract: M24M01-HR 12943 M24XXX M24M01-R AEC-Q100-002 J-STD-020D M24M01-W M24M01-H
Contextual Info: M24M01-HR M24M01-R, M24M01-W 1 Mbit serial I²C bus EEPROM Features • Compatible with all I2C bus modes: – 1 MHz Fast-mode Plus – 400 kHz Fast mode – 100 kHz Standard mode SO8 MN 150 mils width ■ Memory array: – 1 Mb (128 Kbytes) of EEPROM – Page size: 256 bytes

Contextual Info: VND7020AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Loss of ground and loss of VCC

PowerSSO-16

Contextual Info: VND7020AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Loss of ground and loss of VCC

tda2003av

Abstract: tda2003a
Contextual Info: TDA2003A 10 W car radio audio amplifier Datasheet − production data Features • Improved performance over the TDA2002 pinto-pin compatible ■ Very low number of external components ■ Ease of assembly ■ Cost and space savings Description Pentawatt

stp210n75

Abstract: STP210N75F6 210N75F6
Contextual Info: STP210N75F6 N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STP210N75F6 75 V < 3.7 mΩ 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness 3 1 2 TO-220 Application

TDA2003AV

Abstract: TDA2003A TDA2002 pin configuration tda2002 bridge TDA2002 STMicroelectronics pentawatt date code
Contextual Info: TDA2003A 10 W car radio audio amplifier Features • Improved performance over the TDA2002 pinto-pin compatible ■ Very low number of external components ■ Ease of assembly ■ Cost and space savings Description Pentawatt (vertical) Pentawatt (horizontal)

Contextual Info: VND7020AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Loss of ground and loss of VCC

12943

Abstract: M24M01-DR 2741dc M24M01 WLCSP M24M01-D M24M01-1
Contextual Info: M24M01-R M24M01-DF 1-Mbit serial I²C bus EEPROM Datasheet − production data Features • Compatible with all I2C bus modes: – 1 MHz Fast-mode Plus – 400 kHz Fast mode – 100 kHz Standard mode ■ Memory array: – 1 Mbit 128 Kbytes of EEPROM – Page size: 256 bytes

Contextual Info: STB155N3LH6 STD155N3LH6 N-channel 30 V, 2.4 mΩ , 80 A, DPAK, D²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID(1) 30 V 3.0 mΩ 80 A STB155N3LH6 STD155N3LH6 1. Current limited by package • 100% avalanche tested ■ Logic level drive

Contextual Info: TDA2003A 10 W car radio audio amplifier Datasheet − production data Features • Improved performance over the TDA2002 pinto-pin compatible ■ Very low number of external components ■ Ease of assembly ■ Cost and space savings ) s ( ct Description

Contextual Info: STS5DNF20V N-channel 20 V, 0.030 Ω, 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STS5DNF20V 20 V < 0.040Ω @ 4.5 V < 0.045Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface

ampseal 8

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 RELEASED ALL FOR PUBLICATION RIGHTS 20 LOC RESERVED. GE DIST REVISIONS 00 LTR DESCRIPTION REVISED B3 GASKET 2X E C O - 11 - 0 0 5 0 3 0 15 A C C E P T S #4 S E L F T A P P I N G T H R E A D C U T T I N G S C R E W S

E28476

Abstract: 453973
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION By - REVISIONS LOC DIST AF 58 ALL RIGHTS RESERVED. LTR DESCRIPTION V2 1. FOR USE 2. WIRE 3. SEE D E T A IL PRINTED RANGE: MAX D IN 18-28 O U TS ID E DIA FURNISHED AS A CIRCUIT AWG

STU6N62K3

Abstract: 4.7 B1 zener diode 6N62K3 isd 2100 6n62 6N62K
Contextual Info: STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages Datasheet − production data Features Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3

PowerSSO-16

Abstract: SAE1156 ISO-7637-2
Contextual Info: VND7020AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet − production data Features Max transient supply voltage VCC 40 V Operating voltage range VCC 4 to 28 V Typ. on-state resistance per Ch RON

7052L25PF

Abstract: FS1005
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: FS-10-05 31-Jul-2010 Last Buy Deadline for Submission of Order:

NAZV

Contextual Info: NIC Components NAZV470M35V6.3X8.7LLBF Individual Specification Page Page 1 of 1 Select Language Translate Powered by Tech Support: tpmg@niccomp.com NAZV470M35V6.3X8.7LLBF - Individual Specification Page NIC P/N: NAZV470M35V6.3X8.7LLBF Dimensions Product Series

6N62K3

Abstract: 6N62K STP6N62K3 STD6N62K3 STF6N62K3 STU6N62K3 Marking STMicroelectronics zener diode STI6N62K3 Zener Diode ST 41 STP6N6
Contextual Info: STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I²PAK Features Order codes STD6N62K3 STF6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 • VDSS 620 V RDS on max. < 1.2 Ω

TS2007IQT

Abstract: JESD97 TS2007 k007
Contextual Info: TS2007 3 W filter-free Class D audio power amplifer with 6-12 dB fixed gain select Features • Operating range from VCC = 2.4 V to 5.5 V ■ Standby mode active low ■ Output power: 1.4 W at 5 V or 0.45 W at 3.0 V into 8 Ω with 1% THD+N max. ■ Output power: 2.3 W at 5 V or 0.75 W at 3.0 V

6N62K

Contextual Info: STF6N62K3, STI6N62K3 STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3 Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK Features Order codes TAB VDSS RDS on max. ID Pw 5.5 A 30 W 90 W 90 W 90 W 3 STF6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 620 V

Contextual Info: STS5DNF20V N-channel 20 V, 0.030 Ω typ, 5 A STripFET II Power MOSFET in a SO-8 package Datasheet - production data Features Order code VDSS STS5DNF20V 20 V RDS on max. ID 0.040 Ω @ 4.5 V 0.045 Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V)

Contextual Info: VND7020AJ-E Double channel high-side driver with MultiSense analog feedback for automotive applications Datasheet - production data – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Loss of ground and loss of VCC

fsk demodulation source code in C

Abstract: XR2211ACD-F TAN-008 TAN-011 XR2211ACD XR2211 application notes
Contextual Info: XR-2211A .the analog plus FSK Demodulator/ Tone Decoder company TM June 1997–3 APPLICATIONS FEATURES D Wide Frequency Range, 0.01Hz to 300kHz D Caller Identification Delivery D Wide Supply Voltage Range, 4.5V to 20V D FSK Demodulation D HCMOS/TTL/Logic Compatibility