02MAR2007 Search Results

02MAR2007

Contextual Info: R E V I S I ONS LTR DE SC R P T I O N DATE REV PER E C - O S I 1- 0 2 0 1 - 0 4 REV RER E C O - 0 7 - 0 0 4 5 8 3 DWN 23JUN2005 LV 02MAR2007 RG APVD ;p JW NG: PCT P O L Y E S T E R , BLACK, UL 9 4 V - 0 . R RERL OW P R O C E S S C O M P A T I B L E , TERMINALS:

S2000AF

Abstract: ISOWATT218FX S2000AF equivalent JESD97
Contextual Info: S2000AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement

JESD97

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

TAG 8510

Abstract: VC5602V036 hfc 8081 be
Contextual Info: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier

STCN75

Abstract: DS75 LM75 TCN75
Contextual Info: STCN75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current:125 µA (typ) ■ No external components required

Contextual Info: 2STD2360 2STF2360 - 2STN2360 Low voltage fast-switching PNP power transistors Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■ LED ■ Voltage regulation ■

Contextual Info: STP200N4F3 STB200N4F3 N-channel 40 V, 0.0025 Ω, 120 A, D2PAK, TO-220 planar STripFET Power MOSFET Features Type VDSS RDS on max ID Pw STB200N4F3 40 V <0.0031 Ω 120 A 300 W STP200N4F3 40 V <0.0035 Ω 120 A 300 W ) s ( ct du 3 1 • 100 % avalanche tested

21 inch CRT TV

Abstract: BU508AW JESD97
Contextual Info: BU508AW High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement

Contextual Info: STCN75 Digital temperature sensor and thermal watchdog Preliminary Data Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current:125µA (typ) ■ No external components required

M58LT128HSB

Abstract: CR10 M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: BU508AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement

Contextual Info: BU508AF High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement

AN2152

Abstract: TS4985 TS4985EIJT
Contextual Info: AN2152 Application note TS4985 2 x1.2 W stereo audio power amplifier evaluation board user guidelines Introduction This application note concerns the evaluation board DEMOTS4985, specifically designed to help you evaluate the TS4985EIJT stereo audio amplifier.

DS75

Abstract: LM75 STCN75 TCN75
Contextual Info: STCN75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±0.5°C (typ) accuracy – ±2°C (max) accuracy from –25°C to +100°C ■ Low operating current:125 µA (typ)

VC5602

Abstract: 5.1 audio amplifier 134E6 VC6602 S8612 ZTX749 VC5602V036 VC602
Contextual Info: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier

zero crossing detector inverter

Abstract: Ametek bldc Transistor hall w12 AN2502 zero crossing ametek 24v Ametek dc motor Ametek 24v motor trace code st Ametek 24v dc blower
Contextual Info: AN2502 Application note Enhanced sensorless startup control of BLDC motors using ST7FMC Introduction The ST7FMC microcontroller is capable of controlling 3 phase brushless DC BLDC motors in position sensorless mode because of its powerful motor control macro cell. It is capable of

p60nf06

Abstract: P60NF P60NF06 TO-220 p60nf0 P60NF*06 *p60nf06 P60*nf06 p60n STP60NF061 STP60NF06
Contextual Info: STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220

Contextual Info: 2 THIS D R A WI N G IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION R|3 H T S LOC REV ISIONS D I ST AA RESERVED. 22 LTR DE S C R I P T I O N DWN DATE APVD REV PER EC OS I I - 02 0 I - 0 4 23JUN2005 LV SF REV PER E C O - 0 7 - 0 0 4 5 8 3

mosfet 40a 200v

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight

2std2360

Abstract: 2STF1360 2STF2360 2STN1360 2STN2360 N2360 2STD2360T4 D2360
Contextual Info: 2STD2360 2STF2360 - 2STN2360 Low voltage fast-switching PNP power transistors Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■ LED ■ Voltage regulation ■

STRH40N25FSY3

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1
Contextual Info: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

p140nf

Contextual Info: STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID (1) STB140NF55 55V <0.008Ω 80A STB140NF55-1 55V <0.008Ω 80A STP140NF55 55V <0.008Ω 80A 1. Current limited by package

AN2153

Abstract: TS4984 TS4984FC
Contextual Info: AN2153 Application note TS4984 low voltage audio power stereo amplifier evaluation board user guidelines Introduction This application note concerns the evaluation board DEMOTS4984FC, designed to help you evaluate the TS4984 low-power stereo audio amplifier.