stl431c
Abstract: 3-Terminal adjustable regulator STL431 shunt regulator sot-89
Text: STL431 3-Terminal Elektronische Bauelemente Adjustable Shunt Regulator SOT-89 Description The STL431 series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between
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STL431
OT-89
STL431
100mA
01-Aug-2002
stl431c
3-Terminal adjustable regulator
shunt regulator sot-89
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Untitled
Abstract: No abstract text available
Text: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■
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M58MR032C
M58MR032D
40MHz
100ns
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface
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M41ST84W
10ths/100ths
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Untitled
Abstract: No abstract text available
Text: M40SZ100Y M40SZ100W 5 V or 3 V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5 V or 3 V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance
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M40SZ100Y
M40SZ100W
M40SZ100Y:
M40SZ100W:
28-lead
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MJD122
Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)
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MJD122
O-251
O-252
MJD127.
MJD122T4n
MJD122
ST DARLINGTON TRANSISTOR
Date Code Marking STMicroelectronics PACKAGE DPAK
JESD97
MJD122-1
MJD122T4
MJD127
ST T4 0
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KDS 32kHZ crystal
Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface
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M41ST84W
10ths/100ths
KDS 32kHZ crystal
quartz crystal kds 70
AN1572
M41ST84W
AN1012
AI005
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AN1012
Abstract: M41ST84W block diagram of energy saving ABE smd
Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface ■ 3.0/3.3 V operating voltage
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M41ST84W
10ths/100ths
AN1012
M41ST84W
block diagram of energy saving
ABE smd
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Untitled
Abstract: No abstract text available
Text: M40SZ100W 3 V NVRAM supervisor for LPSRAM Datasheet - production data Description The M40SZ100W NVRAM controller is a selfcontained device which converts a standard lowpower SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance
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M40SZ100W
M40SZ100W
DocID007528
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ADQ15-0
Abstract: CMOS linear array M58MR016C M58MR016D TFBGA48
Text: M58MR016C M58MR016D 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■
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M58MR016C
M58MR016D
40MHz
TFBGA48
100ns
ADQ15-0
CMOS linear array
M58MR016C
M58MR016D
TFBGA48
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13May
Abstract: M40SZ100W M40SZ100Y M4Z28-BR00SH M4Z32-BR00SH SOH28 SOIC16 SOIC28
Text: M40SZ100Y M40SZ100W 5 V or 3 V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5 V or 3 V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance
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M40SZ100Y
M40SZ100W
M40SZ100Y:
M40SZ100W:
28-lead
13May
M40SZ100W
M40SZ100Y
M4Z28-BR00SH
M4Z32-BR00SH
SOH28
SOIC16
SOIC28
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88da
Abstract: M58MR032C M58MR032D TFBGA48 ADQ11
Text: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■
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M58MR032C
M58MR032D
40MHz
TFBGA48
100ns
88da
M58MR032C
M58MR032D
TFBGA48
ADQ11
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Untitled
Abstract: No abstract text available
Text: MJD122 MJD127 Complementary power Darlington transistors Features • Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications 3 ■ General purpose linear and switching 1 Description DPAK The devices are manufactured in planar
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MJD122
MJD127
MJD122T4
MJD127T4
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M40SZ100W
Abstract: M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
Text: M40SZ100Y M40SZ100W 5V or 3V NVRAM supervisor for LPSRAM Features • Convert low power SRAMs into NVRAMs ■ 5V or 3V operating voltage ■ Precision power monitoring and power switching circuitry ■ Automatic write-protection when VCC is out-oftolerance
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M40SZ100Y
M40SZ100W
M40SZ100Y:
M40SZ100W:
28-lead
28-leand
M40SZ100W
M40SZ100Y
M4ZXX-BR00SH
SOH28
SOIC16
SOIC28
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mjd127
Abstract: mjd12 MJD122 MJD122T4 MJD127T4
Text: MJD122 MJD127 Complementary power Darlington transistors Features • Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications 3 ■ General purpose linear and switching 1 Description DPAK The devices are manufactured in planar
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MJD122
MJD127
MJD122T4
MJD127T4
mjd127
mjd12
MJD122
MJD122T4
MJD127T4
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