LL4150
Abstract: No abstract text available
Text: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C
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LL4150
D-74025
01-Apr-99
LL4150
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1N4683 data
Abstract: Telefunken tk 19 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685
Text: 1N4678.1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Absolute Maximum Ratings
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1N4678.
1N4717
D-74025
01-Apr-99
1N4683 data
Telefunken tk 19
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
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s 8550 d
Abstract: telefunken ra 100 SCT23
Text: DZ23C2V7-DZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features • SO T-23 surface mount package • 300 mW power dissipation rating • Ideally suited for automatic insertion • AVz for both diodes in one case is < 5% • Common anode style available see AZ series
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DZ23C2V7-DZ23C51
01-Apr-99
FaxBa35
01-Apr-99
SCT-23
s 8550 d
telefunken ra 100
SCT23
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SOD JEDEC
Abstract: No abstract text available
Text: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter
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BAS85
50mmx50mmx1
01-Apr-99
BAS85_
-April-99
SOD JEDEC
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Untitled
Abstract: No abstract text available
Text: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C
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BAS86
50mmx50mmx1
01-Apr-99
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bc815
Abstract: BC815-25 9600 baud rate converter
Text: TOIM3232 Vishay Telefunken Integrated Interface Circuits MEMBER IrDA FSn ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 (xm Description The TOIM3232 1C provides proper pulse shaping for
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OIM3232
OIM3232
4000-series
4000-series
RS232
TN0201T
-Apr-99
bc815
BC815-25
9600 baud rate converter
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IR5H
Abstract: diode ir01
Text: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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MCL4154
1N4154
01-Apr-99
IR5H
diode ir01
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Untitled
Abstract: No abstract text available
Text: BZM55C. v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • • Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C./TZMC. Very sharp reverse characteristic
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BZM55C.
BZT55C.
300K/W
e970-5600
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications
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TZM5221
TZM5267B
1N5221
N5267B
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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LL4151_
1N4151
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: _ BB804 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode Applications Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios Absolute Maximum Ratings
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BB804
100MHz
01-Apr-99
OT-23
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BA979
Abstract: No abstract text available
Text: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current
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BA979
BA979S
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: BAQ333.BAQ 335 Vishay Telefun ken Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SO D 323 / S O T 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current devices
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BAQ333.
BAQ33.
BAQ35
BAQ133.
BAQ135
BAQ333
BAQ334
BAQ335
01-Apr-99
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1009C
Abstract: No abstract text available
Text: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature
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BA679
BA679S
50mmx50mmx1
1009c
01-Apr-99
1009C
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telefunken ta 350
Abstract: vishay AX
Text: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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1N4154
85524e
01-Apr-99
telefunken ta 350
vishay AX
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Untitled
Abstract: No abstract text available
Text: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%
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50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: 1N4150_ Vishay Telefun ken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings
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1N4150_
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings
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TZS4678.
TZS4717
300K/W
50mmx50mmx1
100mA
Number85613
-Apr-99
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage
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LS4151_
1N4151
01-Apr-99
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FZIT
Abstract: No abstract text available
Text: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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TZQ5221
TZQ5267B
--300K/W
50mmx50mmx1
01-Apr-99
FZIT
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TZX18B
Abstract: TZX 16 C
Text: TZX._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances Applications Voltage stabilization
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200mz
01-Apr-99
TZX18B
TZX 16 C
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Untitled
Abstract: No abstract text available
Text: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings
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OCR Scan
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LL4150_
01-Apr
LL4150
01-Apr-99
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BZX85
Abstract: No abstract text available
Text: _BZX85CVishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Sharp edge in reverse characteristics • Low reverse current • Low noise • Very high stability • Available with tighter tolerances Applications
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BZX85CVishay
200mA
BZX85B.
01-Apr-99
BZX85C.
BZX85
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diode ep sod-323
Abstract: 1N4148 SOD-323 A
Text: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package
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MCL4148
MCL4448
1N4148
1N4448
Res448
01-Apr-99
diode ep sod-323
1N4148 SOD-323 A
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