01JUL2008 Search Results

Contextual Info: Product Specification Dynamic Connector D-3900 Series ダイナミックコネクタD-3900シリーズ 108-78400 01JUL2008 Rev.B 108-78400 1 J a n . 製品規格 DYNAMIC CONNECTOR D3900SERIES • 9 7 R e v o 1. 適用範囲 1. Scope: 1.1 内容 1.1 Contents

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/104C NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Linear, Line Drivers and Receivers, Monolithic Silicon MIL-M-38510/104C, dated 01-Jul-2008, has been reviewed and determined to be valid for use in acquisition.

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/323D NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Quadruple Bus Buffer Gates with Three State Outputs, Monolithic Silicon MIL-M-38510/323D, dated 01-Jul-2008, remains inactive for new

STGW19NC60HD

Abstract: STGB19NC60HD GF19NC60HD GP19NC60HD STGB19NC60HDT4 STGF19NC60HD STGP19NC60HD GF19NC60
Contextual Info: STGB19NC60HD, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A - 600 V - very fast IGBT Features • Low on-voltage drop VCE(sat ■ Very soft ultra fast recovery anti-parallel diode 3 3 1 D²PAK Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and

Tresos

Abstract: UM0565 SPI105 automotive ecu manual SPC563M SPI156 SPI DRIVER autosar autosar can driver
Contextual Info: UM0565 User manual SPC563M SPI driver Introduction This user manual describes the AUTOSAR serial peripheral interface SPI driver. AUTOSAR SPI driver configuration parameters and deviations from the specification are described in SPI driver chapter. AUTOSAR SPI driver requirements and APIs are described

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/324D NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Octal Buffer Gates with Three State Outputs, Monolithic Silicon MIL-M-38510/324D, dated 01-Jul-2008, remains inactive for new

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/110C NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Linear, Quad Operational Amplifiers, Monolithic Silicon MIL-M-38510/110C, dated 01-Jul-2008, has been reviewed and determined to be valid for use in acquisition.

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/306E NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Shift Registers, Cascadable, Monolithic Silicon MIL-M-38510/306E, dated 01-Jul-2008, remains inactive for new

PD57002-E

Abstract: PD57018-E PD57060-E JESD97 STEVAL-TDR007V1 1030 mhz STEVAL-TDR00
Contextual Info: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical

GWA19NC60HD

Abstract: GP19NC60HD GF19NC60HD STGB19NC60HDT4 STGF19NC60HD STGP19NC60HD STGW19NC60HD
Contextual Info: STGx19NC60HD STGWA19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode TAB 3 1 1 2 TO-220 ■ High frequency motor drives ■ SMPS and PFC in both hard switch and

STK22N6F3

Contextual Info: STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge

Contextual Info: TDA7375V 2 x 35W dual/quad power amplifier for car radio 1 • ■ ■ FEATURES Figure 1. Package HIGH OUTPUT POWER CAPABILITY: – 2 x 40W max./4 – 2 x 35W/4 EIAJ – 2 x 35W/4 EIAJ – 2 x 25W/4 @14.4V, 1KHz, 10% – 4 x 7W/4 @14.4V,1KHz, 10%

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/102C NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Linear, Voltage Regulator, Monolithic Silicon MIL-M-38510/102C, dated 01-Jul-2008, has been reviewed and determined to be valid for use in acquisition.

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/321C NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Low-Power Schottky TTL, Buffers/Drivers, Open Collector Output, High Voltage, Monolithic Silicon MIL-M-38510/321C, dated 01-Jul-2008, remains inactive for new

STEVAL-TDR007V1

Abstract: PD57018 PD57002-E PD57018-E PD57060-E
Contextual Info: STEVAL-TDR007V1 3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical

STGW19NC60HD

Contextual Info: STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode 3 3 1 Applications D²PAK ■ High frequency motor drives

M58LR256KB

Abstract: M58LR128KB
Contextual Info: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers

STK22N6F3

Contextual Info: STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/316E NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Cascadable Latches,Monolithic Silicon MIL-M-38510/316E, dated 01-Jul-2008, remains inactive for new design; however, the document is valid for use.

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/319C NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Low-Power Schottky TTL, 4 by 4 Register File, Cascadable, Monolithic Silicon MIL-M-38510/319C, dated 01-Jul-2008, remains inactive for new design; however, the document is valid for use.

TDA7565

Abstract: STP60NE06 STPS30L40CT 1W radio transmitter block diagrams
Contextual Info: TDA7565 Quad power amplifier with built-in voltage converter Features • Multipower BCD technology ■ DMOS power output ■ Non-switching high efficiency amplifier ■ Switching high efficiency voltage converter ■ High output power capability 4x60W EIAJ/4Ω

STK22N6F3

Abstract: JESD97
Contextual Info: STK22N6F3 N-channel 60 V, 0.0048 Ω, 22 A, PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

GW19NC60HD

Abstract: GF19NC60HD gb19nc60 gb19nc60hd STGF1 GF19NC60 STGF19NC60HD STMicroelectronics DPAK Marking CODE
Contextual Info: STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode 3 3 1 Applications D²PAK ■ High frequency motor drives