018 82.1 Search Results

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

L-Band

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

si1521

Abstract: AC3064
Contextual Info: 5/92 ^ ¡Z D U O H R 2225-K Martin Avenue, Santa Clara, CA 95050 FAX n rn M f= > n N E N T s /\ c i'ir m A ¿A U iJ U i/- } loo to 3000 m h z TO_8 cascadable Amplifier AC3064 Typical Values Ultra Broad Bandwidth . High Gain . Low Noise Figure .

BJT BF 331

Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

702 TRANSISTOR sot-23

Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

014e1

Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

Contextual Info: 333 SERIES CARD EDGE CONNECTOR .156" 3.96mm Contact Spacing 333 SERIES ORDERING CODE Example Part Number 333 - 044 - 520 - 2 04 Series Total Number of Contacts Contact Code Contact Rows and Insulator Style Mounting Options Series 333 Total Number of Contacts 1

7447

Abstract: wire wrap card 3.96 Card Edge Connectors
Contextual Info: 337/387 SERIES CARD EDGE CONNECTOR .156" 3.96mm Contact Spacing 337/387 SERIES ORDERING CODE Example Part Number 337 - 086 - 524 - 2 04 Series Total Number of Contacts Contact Code Contact Rows and Insulator Style Mounting Options Series 337 387 Insulator Colour

Contextual Info: 10/96 ^O nUEHH 1 384 Santa Trinità Ave. COMPONEN TS A 020VJ • Sunnyvale, CA • 94086 * Phone 408-522-3838 Fax 408-522-3839 10 to 2000 MHz TO-8 Cascadable Amplifier Outiine Drawings AC2069 Typical Values High Output Power. Medium Gain .

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

HE901

Contextual Info: 342/392 SERIES CARD EDGE CONNECTOR .100" 2.54mm Contact Spacing 342/392 SERIES ORDERING CODE Example Part Number 342 - 100 - 541 - 2 02 Series Total Number of Contacts Contact Code Contact Rows Mounting Options Series 342 392 Insulator Colour Green Black

12697

Abstract: 2238 SOT363 tm 2312
Contextual Info: AG303-63 The Communications Edge TM Preliminary Product Information InGaP HBT Gain Block Product Features Product Description Functional Diagram The AG303-63 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At

Contextual Info: 345/395 SERIES CARD EDGE CONNECTOR .100" 2.54mm Contact Spacing 345/395 SERIES ORDERING CODE Example Part Number 345 - 050 - 520 - 2 02 Series Total Number of Contacts Contact Code Contact Rows and Insulator Style Mounting Options Series 345 395 Total Number of Contacts 1

choke 5800 102

Contextual Info: EC1019B InGaP HBT Gain Block Product Features DC – 4 GHz +19.5 dBm P1dB at 2 GHz +31 dBm OIP3 at 2 GHz 18.5 dB Gain at 2 GHz 2.8 dB Noise Figure Available in Lead-free / green SOT-89 Package Style • Internally matched to 50 Ω • • • • • •

EC1019B

Abstract: EC1019B-G EC1019B-PCB EC1019C JESD22-A114 1019G
Contextual Info: EC1019B The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • • • • • • DC – 4 GHz +19.5 dBm P1dB at 2 GHz +31 dBm OIP3 at 2 GHz 18.5 dB Gain at 2 GHz 2.8 dB Noise Figure Available in Lead-free / green

WJ 176

Abstract: EC1019B EC1019B-G EC1019B-PCB EC1019C JESD22-A114
Contextual Info: EC1019B InGaP HBT Gain Block Product Features Product Description Functional Diagram GND DC – 4 GHz +19.5 dBm P1dB at 2 GHz +31 dBm OIP3 at 2 GHz 18.5 dB Gain at 2 GHz 2.8 dB Noise Figure Available in Lead-free / green SOT-89 Package Style • Internally matched to 50 Ω