photomos AQV212 smd
Abstract: photomos AQV212 AQV217 AQV210 AQV212 AQV212A AQV214 AQV214H AQV215 AQV215A
Text: GU PhotoMOS AQV21P, AQV214H (Standard type) VDE TESTING (Reinforced type) GU PhotoMOS (AQV21P, AQV214H) Controls low-level input signals. Controls load voltage 60V to 600V. FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3
|
Original
|
AQV21
AQV214H)
AQV212
AQV215
AQV214H
AQV216
AQV210
AQV214
photomos AQV212 smd
photomos AQV212
AQV217
AQV212
AQV212A
AQV214H
AQV215
AQV215A
|
PDF
|
8085 wiring diagram
Abstract: ssr schematic circuit AQW21 8085 application AQW210SX AQW210S AQW210SZ AQW214S AQW214SX AQW214SZ
Text: GU PhotoMOS AQW21PS TESTING Super miniature design, SOP (2 Form A) 8-pin type. Controls load voltage 350V, 400V. SO package measuring (W) 4.4 x (L) 9.37 × (H) 2.1 mm (W) .173× (L) .369× (H) .083 inch —approx. 38% of the volume and 66% of the footprint size of
|
Original
|
AQW21
AQW210S
AQW214S
aqw21s:
010404J
8085 wiring diagram
ssr schematic circuit
8085 application
AQW210SX
AQW210S
AQW210SZ
AQW214S
AQW214SX
AQW214SZ
|
PDF
|
AQZ102
Abstract: il 100 diode AQZ104 AQZ202 AQZ105 AQZ107 AQZ204 AQZ205 AQZ207
Text: Power PhotoMOS AQZ10P, 20P High capacity PhotoMOS Relay. (Load current Max. 4A) DC load type is available. 3.5 .138 21 .827 12.5 .492 mm inch 1 2 - 3 + 4 AC/DC type 1 - 2 3 + - 4 + Power PhotoMOS (AQZ10P, 20P) FEATURES TYPICAL APPLICATIONS 1. High capacity PhotoMOS Relay in a
|
Original
|
AQZ10
010404J
AQZ102
il 100 diode
AQZ104
AQZ202
AQZ105
AQZ107
AQZ204
AQZ205
AQZ207
|
PDF
|
AQV210EH
Abstract: catalog mosfet Transistor smd LED datasheet AQV210E AQV210EA AQV210EAX AQV210EHA AQV214E AQV214EA AQV214EH
Text: GU-E PhotoMOS AQV210E, AQV21PEH (Standard type) General use and economy type. DIP (1 Form A) 6-pin type. Reinforced insulation 5,000V type. VDE TESTING (Reinforced type) GU-E PhotoMOS (AQV210E, AQV21PEH) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346
|
Original
|
AQV210E,
AQV21
AQV210EH,
AQV214EH
aqv21e:
010404J
AQV210EH
catalog mosfet Transistor smd
LED datasheet
AQV210E
AQV210EA
AQV210EAX
AQV210EHA
AQV214E
AQV214EA
AQV214EH
|
PDF
|
tk19
Abstract: tk1-5v TK1-12V tk19 035
Text: TK TESTING ULTRA LOW PROFILE 2 A POLARIZED RELAY 10.6 .417 TK RELAYS FEATURES 9.0 .354 • Low profile 4 mm .157 inch height • High contact capacity: 2 A • Surge withstand voltage between contact and coil: 2,500 V Telcordia 4.0 .157 mm inch SPECIFICATIONS
|
Original
|
010404J
tk19
tk1-5v
TK1-12V
tk19 035
|
PDF
|
TQ2SA-12V
Abstract: TQ2SA-L-12V DIODE SMD L26 smd transistor 079 smd transistor L45 smd diode L23
Text: TQ SMD TESTING TQ SMD RELAYS LOW-PROFILE SURFACE-MOUNT RELAY FEATURES 14 .551 9 .354 5.6 .220 mm inch • Low-profile: 6 mm .236 inch Tape height: max. 6.5 mm .256 inch • Tape and reel package is available as standard packing style • Surge withstand between contacts and coil: 2,500 V
|
Original
|
010404J
TQ2SA-12V
TQ2SA-L-12V
DIODE SMD L26
smd transistor 079
smd transistor L45
smd diode L23
|
PDF
|
DS4E-M-DC24V
Abstract: DS1E-ML-DC6V DS4E-S-DC24V DS1E-M-DC12V DS1E-M-DC24V DS1E-M-DC48V DS1E-S-DC12V DS1E-S-DC24V DS1E-S-DC48V DS2E-ML-DC9V
Text: DS HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY FEATURES 9.9 .390 35.24 1.387 9.8 .386 9.9 .390 20 .787 9.8 .386 DS4E 9.9 .390 15 .590 DS RELAYS 9.8 .386 DS2E DS1E mm inch • High sensitivity: 200 mW pick-up power 100 mW pick-up power types available
|
Original
|
010404J
DS4E-M-DC24V
DS1E-ML-DC6V
DS4E-S-DC24V
DS1E-M-DC12V
DS1E-M-DC24V
DS1E-M-DC48V
DS1E-S-DC12V
DS1E-S-DC24V
DS1E-S-DC48V
DS2E-ML-DC9V
|
PDF
|
TN2-12
Abstract: TN2-24 TN2-48
Text: TN SLIM POLARIZED RELAY FEATURES 5.6 .220 14 .551 TN RELAYS • Small header area makes higher density mounting possible • High sensitivity: 140 mW nominal operating power single side stable 3-12 V type 9.8 .386 • Surge voltage withstand: 1500 V FCC
|
Original
|
010404J
TN2-12
TN2-24
TN2-48
|
PDF
|
RK1-5V
Abstract: RK1-12V RK1-24V RK1-L-12V RK1-L2-12V RK1-L-24V RK1R-12V RK1R-24V RK1R-L-12V RK1R-L-24V
Text: RK 1.5 GHz MICROWAVE RELAY 20.2 .795 11.2 .441 9.7 .382 mm inch RK RELAYS • Excellent high frequency characteristics Isolation: Min. 60dB at 1.5 GHz Insertion loss: Max. 0.3dB (at 900 MHz) • V.S.W.R.: Max. 1.5 (at 900MHz) • High sensitivity in small size
|
Original
|
900MHz)
RK1-12V;
010404J
RK1-5V
RK1-12V
RK1-24V
RK1-L-12V
RK1-L2-12V
RK1-L-24V
RK1R-12V
RK1R-24V
RK1R-L-12V
RK1R-L-24V
|
PDF
|