39V18
Abstract: GAL39V18 Signal Path Designer
Text: NATL SEMICOND MEMORY 31E J> bSOHEb 00fcj4244 k U National Semiconductor GAL39V18 Generic Array Logic General Description Features Using a high performance E2CMOS technology, National Semiconductor has produced a next-generation program mable logic device, the GAL 39V18. Having an FPLA archi
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00fcj4244
GAL39V18
GAL39V18
39V18.
24pin,
300-mil
TL/L/10002-12
39V18
Signal Path Designer
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N27C128
Abstract: N27C128-200V05 27C128 INTEL 27c128 290127 27c128a
Text: INTEL CORP flEMORY/LOGIC SOE ]> • 4ö2bl7b 00fcjfci735 0 intel 27C 128 ~ r~ v z ~ / 3 ~ e s 1 2 8 K ( 1 6 K x 8 ) C H M O S P R O D U C T IO N A N D U V E R A S A B LE P R O M s ■ CHMOS Microcontroller and Microprocessor Compatible ■ High Performance
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00fcjfci735
28-Pin
32-Lead
27C128
27C128,
-250V05
-250V10
N27C128
N27C128-200V05
27C128 INTEL
290127
27c128a
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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Untitled
Abstract: No abstract text available
Text: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers
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H8S/2245
32bit
H8S/2000
16-bit
32-bit
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Untitled
Abstract: No abstract text available
Text: HCTS163MS 3 Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP) M IL-STD-1835 CDIP2-T16 TOP VIEW > Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS163MS
IL-STD-1835
CDIP2-T16
t18600
HCTS163
TA14448A.
00Li27b2
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Untitled
Abstract: No abstract text available
Text: f f l H A R R HCS20MS I S S E M I C O N D U C T O R Radiation Hardened Dual 4-Input NAND Gate September 1995 Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-183S CDIP2-T14, LEAD FINISH C
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HCS20MS
MIL-STD-183S
CDIP2-T14,
H3D2271
00Li22fcj3
05A/cm2
00tB2L4
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Untitled
Abstract: No abstract text available
Text: æ HARRIS S E M I C O N D U C T O R H C S 1 2 5 M S Radiation Hardened Quad Buffer, Three-State September 1995 Features Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS
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IL-STD-1835
CDIP2-T14,
00b2331
HCS125MS
HCS125M
QDb2332
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HD64F3048
Abstract: DDL2473 HD6433044 HD6433045 HD6433047 HD6433048 HD6473048 2117 RAM
Text: Section 21 Electrical Characteristics —Preliminary— 21.1 Absolute Maximum Ratings Table 21-1 lists the absolute maximum ratings. Table 21-1 Absolute M aximum Ratings —Prelim inary— Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Vpp
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HD6473048
HD64F3048
HD6473048,
HD6433048,
HD6433047,
HD6433045,
HD6433044
00b2S0b
HD64F3048
DDL2473
HD6433045
HD6433047
HD6433048
2117 RAM
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B 1449 transistor
Abstract: K 2056 transistor 476 35k 110 TRANSISTOR b 772 p transistor vc 548 BFG55 transistor D 882 p d 772 transistor
Text: 7110fl5ta DQtififiOE b 7 7 H i P HIN PhHips_Semicont^ Product specification PNP 4 GHz wideband transistor FEATURES • • • • £ BFG55 PINNING High output voltage capability High gain bandwidth product Good thermal stability Gold metallization ensures
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7110fl5ta
BFG55
OT223
BFG35.
B 1449 transistor
K 2056 transistor
476 35k 110
TRANSISTOR b 772 p
transistor vc 548
BFG55
transistor D 882 p
d 772 transistor
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0257S2
Abstract: No abstract text available
Text: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith
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02575E5
QDLBE72
D257525
21918B/0-October
00bfl5li7
0257S2
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Untitled
Abstract: No abstract text available
Text: SIEMENS Intelligent 221-Bit EEPROM Counter for > 20000 Units with Security Logic and High Security Authentication SLE 4436 Features • 221 bit EEPROM and 16 bit maskprogrammable ROM 104 bit user memory fully compatible with SLE 4406 - 64 bit Identification Area
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221-Bit
fl235bG5
0Qb345b
0235bOS
Q0b3457
fl53SbD5
00fcj345fl
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Untitled
Abstract: No abstract text available
Text: Tem ïc TSC80C31/80C51 S e m i c o n d u c t o r s CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller Description The TSC80C31/80C51 is high performance SCMOS versions of the 8051 NMOS single chip 8 bit |J.C. The fully static design of the TSC80C31/80C51 allows to
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TSC80C31/80C51
TSC80C31/80C51
TSC80C31/80C51-L16
TSC80C31/80C51-L2
TSC80C31/80C51XXX-20CA
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Untitled
Abstract: No abstract text available
Text: HCTS373MS HARRIS S E M I C O N D U C T O R Radiation Hardened Octal Transparent Latch, Three-State August 1995 Features Pinouts 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20 TOP VIEW
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HCTS373MS
MIL-STD-1835
CDIP2-T20
M302271
D0b2fl77
05A/cm2
HCTS373
TA14403A.
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TDA7264
Abstract: THD56 SCHEMATIC SOUND BOARD FZJ 145
Text: r Z J S G S -TH O M SO N ^ 7 # 0 ^ D g ^ @ i[L [l(g ï^ M 0 i TDA7264 25 + 25W STEREO AMPLIFIER WITH MUTE/ST-BY • WIDE SUPPLY VOLTAGE RANGE (UP TO 50V ABS MAX. ■ SPLIT SUPPLY . HIGH OUTPUT POWER: 25 + 25W @ THD =10%, Rl = 80, Vs = ±20V . NO POP AT TURN-ON/OFF
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TDA7264
TDA7264
71ETE37
THD56
SCHEMATIC SOUND BOARD
FZJ 145
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hcf4001b
Abstract: No abstract text available
Text: HCC/HCF4000B-4001B HCC/HCF4002B-4025B S G S -T H O M S O N \u NOR GATE 4000B-DUAL 3 INPUT PLUS INVERTER 4001B-QUAD 2 INPUT 4002B-DUAL 4 INPUT 4025B TRIPLE 3 INPUT micropackage. The HCC/HCF4000B, HCC/HCF4001B, HCC/HCF 4002B and HCC/HCF4025B nor gate provide the
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HCC/HCF4000B-4001B
HCC/HCF4002B-4025B
4000B-DUAL
4001B-QUAD
4002B-DUAL
4025B
100nA
HCC4000B,
HCC4001B,
HCC4002B
hcf4001b
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Untitled
Abstract: No abstract text available
Text: S H IP 4 0 8 1 M A S S 'S 80V/2.5A Peak, High Frequency Full Bridge FET Driver January 1995 Description Features Independently Drives 4 N-Channel FET In Half Bridge or Full Bridge Configurations The HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic SOIC and DIP
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HIP4081
95VDC
1000pF
00b017b
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AMD K6
Abstract: No abstract text available
Text: Preliminary Information Mobile AMD-K6 -III-P Processor Data Sheet 22655A/0-May 1999 1 AMDË1 M o b ile A M D -K 6 ® -III-P Processor • Advanced 6-Issue RISC86® Superscalar Microarchitecture ♦ Ten parallel specialized execution units ♦ Multiple sophisticated x86-to-RISC86 instruction decoders
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2655A/0-May
RISC86Â
x86-to-RISC86
RISC86
64-Kbyte
32-Kbyte
256-Kbyte
G257525
0Db4144
AMD K6
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hs138
Abstract: No abstract text available
Text: L j A Q E HS-302RH/883S, HS-303RH/883S, HS-306RH/883S, HS-307RH/883S, HS-384RH/883S, HS-390RH/883S p i e Radiation Hardened CMOS Analog Switches September 1995 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of
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HS-302RH/883S,
HS-303RH/883S,
HS-306RH/883S,
HS-307RH/883S,
HS-384RH/883S,
HS-390RH/883S
HS-3XXRH/883S
00b337T
-302RH/303RH/306RH/307RH/384RH/390RH/883S
1930nm
hs138
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temic 8051
Abstract: DIL-4 temic 80c51 marking 09x 80C31 TEMIC
Text: Tem ïc TSC80C31/80C51 S e m i c o n d u c t o r s CMOS 0 to 44 MHz Single-Chip 8 Bit Microcontroller Description The TSC80C31/80C51 is high performance SCMOS versions of the 8051 NMOS single chip 8 bit |J.C. The fully static design of the TSC80C31/80C51 allows to
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tsc80c31/80c51
TSC80C31/80C51
Military-55Â
TSC80C31/80C51XXX-20CA
000b357
temic 8051
DIL-4
temic 80c51
marking 09x
80C31 TEMIC
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ZO 607 MA 7A 523
Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Text: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!
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BFQ82
BFQ82
Q62702-F1189
AH35b05
00b7Sn
ZO 607 MA 7A 523
cmo 765
transistor zo 607 MA 7S
ZO 607 MA 7A 524
CM 1241 siemens
Ka2 transistor
BFQ 270
ZO 607 transistor
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Untitled
Abstract: No abstract text available
Text: 82C284/883 HARRIS S E M I C O N D U C T O R Clock Generator and Ready Interface for 80C286 Processors August 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.
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82C284/883
80C286
MIL-STD883
82C284/883
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28F010-150P1C4
Abstract: LQXO N28F010-200P1C4 402b eeprom 28f010-200 26f010 29020 intel 3003 3003 intel
Text: INTEL CÖRP MEMORY/LOGIC 20E D • MflSblTb 00fc,730S 2 T-¥6~/3-Z7 28F010 1024K (128K X 8) CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 ¡i b Typical Byte-Program — 2 Second Chip-Program
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GQtj730S
28F010
1024K
QQb7327
T-46-13-27
32-PIN
32-LEAD
135ns
D28F010-135P1C4
28F010-150P1C4
LQXO
N28F010-200P1C4
402b eeprom
28f010-200
26f010
29020
intel 3003
3003 intel
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Untitled
Abstract: No abstract text available
Text: CSI H A R R HCTS139MS I S S E M I C O N D U C T O R Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16
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HCTS139MS
MIL-STD-1835
CDIP2-T16
Si2271
00b2707
05A/cm2
10Oum
10Oum
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AKJ1384C
Abstract: M48Z59 M48Z59Y M4Z28-BR00SH1 SOH28
Text: 5 7 . SGS-THOMSON M48Z59 CMOS 8K X 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY MICROPROCESSOR POWER-ON RESET Valid all the way to Vcc = Vss AUTOMATIC POWER-FAL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT
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M48Z59
M48Z59
M48Z59Y:
soh28
71BTE37
AKJ1384C
M48Z59Y
M4Z28-BR00SH1
SOH28
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