Transistor 4733
Abstract: CD4059 Voltage-to-Frequency Converters TELEDYNE HNIL amp 7313 4733-HR teledyne 1902 4731-HR a 4731
Text: T EL ED YN E COMPONENTS 3bE D fH17bD5 00D75S1 0 *TS C WTELEDYNE COMPONENTS 4731 4733 HIGH-RELIABILITY HYBRID VOLTAGE-TO-FREQUENCY CONVERTERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The 4731 and 4733 low-drift voltage-to-frequency V-toF converters produce output pulse trains whose repetition
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fH17bD5
00D75S1
DDD75SC
C--12
Transistor 4733
CD4059
Voltage-to-Frequency Converters
TELEDYNE HNIL
amp 7313
4733-HR
teledyne 1902
4731-HR
a 4731
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2SC2650
Abstract: oz903
Text: TOSHIBA - C D I S CR E TE /O P TO J 9097250 TOSHIBA DF|-=m=J7250 <DISC R ET E/ OP TO 2SC2650 ' 56C Ö7 58 i 00D7SÖ1 D T ' - J J V ? S IL IC O N NPN T R IP L E D IF F U SE D TYPE 34.3MAX. 5.3MAX 3X0 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS.
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00D7SÃ
2SC2650
oz903
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2SC994
Abstract: No abstract text available
Text: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DE t O ^ S S O CD I S C R E T E / O P T O bòC. 00D743D 5 | ~ 07430 D 2SC994 SILICO N NPN E P IT A X IA L PLAN AR TYP E Unit in nan VHF BAND POWER AMPLIFIER APPLICATIONS /2fa39MAX. ,08.4 5 MAX FEATURES : • Output Power !
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00D743D
2SC994
175MHz,
a39MAX.
0Ol45
175MHz
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2SD1353
Abstract: No abstract text available
Text: St TOS HIBA { D I S C R E T E /O PT O } DEjTD^SSG 00D7clia □ | 56C 90972 50 TOSH IBA <DI SCRETE/OPTO 07918 D T- 2SD1353 S IL IC O N NPN T R IP L E D IF F U SE D TYPE_ AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: Unit in mm " l a 3 MAX
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00D7clia
2SD1353
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DE~J TDTTESD 00D7S4b □ 56C 0 7 5 4 6 <DIS C R E T E/ OP TO r~33-°? o SILICON NPN EPITA XIA L PLANAR TYPE Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE) y _ § IS
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00D7S4b
28MHz
-30dB
400pF
200pF
121ID,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DISCRETE/OPTO M ^ I O ^ S D 00D743D 2 | ~ bòC D 07430 2SC994 SILICON NPN EPITA X IA L PLANAR TYPE Unit in nun VHF BAND POWER AMP LI F IE R A PP LICATIONS . FEATURES 0 S .Z 9 U A X . J# 8 .4 5 M A X : Output Power
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00D743D
2SC994
175MHz,
175MHZ
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s300h
Abstract: No abstract text available
Text: I N T E R N A T IONAL RECTIFIER I« R | ~D5 DÌf| 4fl554SE 00D7b7S T 1 ~ T ~ /? Jata Sheet No. PD-3.129 in t e r n a t io n a l. r e c t if ie r S30D & S30DH SERIES 800-200 VOLTS RANGE 470 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs
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4fl554SE
00D7b7S
S30DH
PARAM30
T0-209AE
O-118]
T0-209AD
-108J)
T-25-19
s300h
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Untitled
Abstract: No abstract text available
Text: IN TE RNA TIONAL RECTI FI ER IO R in t e r n a t io n a l ?3 DE|4Û554S2 00D70L7 fl | T - z-S-«» Data Sheet No. PD-3.170 r e c t if ie r S38BF SERIES 2000-1800 VOLTS RANGE STANDARD TURN-OFF TIME 60 fjis 930 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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554S2
00D70L7
S38BF
S38BF20B.
0G07D7S
T0-200AC
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r 908
Abstract: No abstract text available
Text: GÛ14577 P 00D7MT 3D7 • D.hhhDIGICS* AWD1900 Driver MMIC Your GaAs IC Source Advanced Product Information Rev 0 1900 MHz Band PCS GaAs Power Amplifier IC DESCRIPTION: The AWD1900 is a monolithic Driver Amplifier suited for PCS telephone applications. FEATURES:
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00D7MT
AWD1900
AWD1900
D00075E
r 908
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Untitled
Abstract: No abstract text available
Text: bD E » • ^ 7 0 5 7 6 00D76H3 THD ■ Z E T B ZETEX SEMICONDUCTORS N-channel enhancement mode vertical D M OS FET ZVN2535 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance
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00D76H3
ZVN2535
F-142
DGD7fl45
F-143
F-144
0007A47
F-145
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MPS2222
Abstract: MPS2222A PN2222A
Text: SA MS UN G SEMICONDUCTOR INC MPS2222A 14E D | 7*14,4142 00D730fl 8 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Coilector-Emitter Vtaltaga: V«o=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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00D730fl
MPS2222A
625mW
MPS2222
T-29-21
150mA,
500mA,
PN2222A
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T-31-25
Abstract: VG 10 SAMSUNG KSK211
Text: SAMSUNG SEMICONDUCTOR INC IfE D | 7 ^ 1 4 2 00D7Q11 7 | Under Development KSK211 SILICON N-CHANNEL JUNCTION FET , T-31-25 FM TUNER VHF AMPLIFIER S O T -2 3 • NF = 2.5 dB TYP • IY fsI = 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSK211
T-31-25
OT-23
KSK211
1b4142
T-31-25
VG 10 SAMSUNG
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Untitled
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIO 75 " •■■: D È I b^BSflSa 00D7E0S 1 . , ■ -': 6932 852 PANASONIC INDL *ELECTRONIC 72C 0 72 05_ O j - W ' / ; LS TTL DN74LS5/U-X DN74LS280/DN74LS280S DN74LS280 DN74LS280S 9-bit Odd/Even P arity G enerators/C heckers D 7 4 L S 2 8 0 /S IÌ, 9 tf-y
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00D7E0S
DN74LS280/DN74LS280S
DN74LS5/U-X
DN74LS280
DN74LS280S
bl32flS2
G0G72D7
DN74LSS>
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SLC-50VW
Abstract: SLC-50MW SLC50MW 50yy
Text: • 00D7T3S i' 11^ ■RHM — K /L ig h t Emitting Diodes SLC-50 SLC-50 Series <l> 4.7mm Cylindrical Lamps Series ' iff fi^ ü H /D im e n s io n s (Unit : mm) SLC - 50 -> U - X l i , M 7 > 7 'T 'f . f « t f ' 7 C GaP £ 7 7 h i/c L, ffo ?LS • iiiT i'S t o
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00D7T3S
SLC-50
SLC-50
SLC-50VR
SLC-50DU
FiQ-26
SLC-50VW
SLC-50MW
SLC50MW
50yy
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Untitled
Abstract: No abstract text available
Text: 4855452 INTERNATIONAL RECTIFIER IOR ÏÏ2 02E 0785Ö 00D7flSfi o b T ~ - £> 3 - 2~j Data Sheet No. PD-z.097 INTERNATIONAL RECTIFIER »e J 4055455 D | R18CF, R18SF, R18CFR AND R18SFR SERIES 1200-1000 VOLTS RANGE REVERSE RECOVERY TIME 1 . 0 / 105 AMP AVG STUD MOUNTED
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00D7flSfi
R18CF,
R18SF,
R18CFR
R18SFR
R1BCGFR10A;
D0-205AC
D0-30)
D0-205AA
R18CGF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER XQR 73 DE | 4055455 00D71D3 a Ì ~ 103 Data Sheet No. PD-3.174 in t e r n a t io n a l r e c t if ie r S52KF SERIES 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 40 /j s 1640 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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00D71D3
S52KF
S52KF
S52KF14B.
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Untitled
Abstract: No abstract text available
Text: • 7flSfltm 00D7TD7 254 BBRHM f S J i # K /L ig h t Emitting Diodes SLV-31 Series SLV-31 Series 4> 3mm Inverted Cone Lamps ^ ft^ & IIl/D im ensions Unit : mm) SLV-31 v GaP £ 'J - X l t , R y .'t :m P m W i< 0 § & t 9 4 t - K T - i® 1ST L f r f c l K i . 'H S t t l i f l l S t - 3 * 6 6
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00D7TD7
SLV-31
SLV-31
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JJS-100
Abstract: D0-205AC P-200A
Text: 4855452 INTERNATIONAL R E C T I F I E R 02E 07864 IO R l INTERNATIONAL RECTIFIER □H D G 3 ^ / ^ata Sr,eet NO. PL>"Z.U98 DE I MfiSSMSH 00D70b4 1 | R18CF, R18SF, R18CFR AND R18SFR SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIM E 1.25//S 100 AMP AVG STUD MOUNTED
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R18CF,
R18SF,
R18CFR
R18SFR
25//S
R1BCFR14A.
D0-205AC
D0-30)
D0-205AA
R18CF
JJS-100
D0-205AC
P-200A
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marking fl
Abstract: KSR2104 KSR1104 H47-K
Text: SAMSUNG SEMICONDUCTOR m e_ INC KSR2104 00D7117 d | i PNP EPITAXIAL SILICON TRANSISTOR “ SWITCHING APPLICATION Bias Resistor Built In ~ - 3 y -13 — • Switching Circuiti Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=47KQ, R¡=47K0)
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KSR2104
KSR1104
marking fl
KSR1104
H47-K
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tp 806
Abstract: thomson thyristors la 78140 Case 806-05 52SG
Text: 7fiC D | 7 cî2c]237 00D7t,ET E S G S-THOnSON TYS 806-05 —►TYS 806-8 TYS 807-05 —►TYS 807-8 OMSON EMICONDUCIORS SENSITIVE GATE THYRISTORS THYRISTORS SENSIBLES 78C 07629 ITRMS = 8 A/Tcaw = 75°C • Operates directly from tow signal -J— "l_ - . . ^
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00D7bET
QD7b35
tp 806
thomson thyristors
la 78140
Case 806-05
52SG
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Untitled
Abstract: No abstract text available
Text: PANASONIC 6932852 PANASONIC x U b T S IC A N 5 m. # 72 D e b132fl5S INDL*ELECTRONIC 72C 07836 00D7a3b D _I_ T T 7 - ^ > t 3 . i Y I F , S IF 0 S & /C o lo r T V V IF and S IF AN5112 C irc u it k U n it I AN5112 l i , • U C J-
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b132fl5S
00D7a3b
AN5112
AN5112
1200pF
047/zF
TLI67321
TLS63318
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IC 7473
Abstract: CI 7473 2SC2075 7E50 AC75 27MHz rf transmitter 55vl 03a a03
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DE 1^0^7250 00D7470 3 f~ Tb <DI S C R E T E / O P T O S IL IC O N NPN E P IT A X IA L TYPE P C I PROCESS) 56C 07470 p 7 - 3 3 - 0 7 2SC2075 _ Unit in mm 27MHz POWER AMPLIFIER APPLICATIONS. FEATURES : • Recommended for Output Stage Application of
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00D7470
2SC2075
27MHz
-55VL50
37MHz
150mV
-60----I-
111II
IC 7473
CI 7473
2SC2075
7E50
AC75
27MHz rf transmitter
55vl
03a a03
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telefunken 8010
Abstract: P 600 I 1903
Text: TELEFUNKEN ELECTRONIC fl'JEOOSb 00D76b3 3 • AL6G RÔD D TCZS 8000 TCZS 8010 TTIlOLilFIliiMlCSiKl electronic T - < //- 7 / Creative Technologies Matchable Pairs - Emitter and Detector Construction: Emitter: Detector. Applications: GaAs IR Emitting Diode Integrated Optoelectronic Circuit with Schmitt-Trigger Logic Output
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00D76b3
C--07
00078b?
IAL66
telefunken 8010
P 600 I 1903
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T-33-35
Abstract: 2SD700
Text: "st TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA Í F| T O ^ S S O 00D7771 t T-33-35 V 56C 07771 DISCRETE/OPTÒ) SILICON NPN TRIPLE DIFFUSED M ESA TYPE _ (DARLINGTON POWER)_ 2SD700 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS.
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-CDISCRETE/0PT03-
00D7771
T-33-35
2SD700
172SD
T-33-35
2SD700
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